SILICON APD Search Results
SILICON APD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| FLA2N04BP | Amphenol Communications Solutions | FLA Panel Gasket NEMA ANSI C136.41, Silicone Rubber, Black | |||
| FLBP77012 | Amphenol Communications Solutions | FLB Base NEMA ANSI C136.41, 76mm, 3 Power, 4 Signal, Vented, Silicone Gasket | |||
| FLA016230R1 | Amphenol Communications Solutions | FLA Receptacle NEMA ANSI C136.41, 3 Power, No Signal, 16AWG, 150C, with Panel Gasket Silicone Rubber | |||
| FLA414130R1 | Amphenol Communications Solutions | FLA Receptacle NEMA ANSI C136.41, 3 Power, 4 Signal, 14AWG, 105C, with Panel Gasket Silicone Rubber | |||
| FLBP75012 | Amphenol Communications Solutions | FLB Base NEMA ANSI C136.41, 76mm, 3 Power, 2 Signal, Vented, Silicone Gasket |
SILICON APD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Standard-Area Silicon Avalanche Photodiodes 230, 500 µm PD-LD Inc. offers 2 sizes of standard Silicon Avalanche Photodiodes in several styles of fiber coupled packages. The semiconductors are available in two standard sizes: 230 micron or 500 micron active areas. Our Silicon APDs cover |
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880nm905nm | |
avalanche photodiodes
Abstract: AD-1100-9 AD-1900-9 AD-230-9 AD-2500-9 AD-3000-9 AD-5000-9 AD-500-9 AD-800-9 Silicon apd
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ad-230-90ad500-9-1905nmavalanche photodiodes+9 | |
AD-230-9
Abstract: AD500 AD-500-9 Pacific Silicon Sensor 30009 905nm
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ad-230-90ad500-9-1905nmad-230-9+4 | |
C30817E
Abstract: C30955EH
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c30902c30902ehc30921ehc30902sh+3 | |
AD-1100-8
Abstract: avalanche photodiodes AD-230-8 AD500-1 120-190 ad500-13 rise time apd
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ad-2500-8ad500-1780nmad-1100-8+5 | |
AD-500-8
Abstract: AD500-8 avalanche photodiodes AD-1100-8 AD-1900-8 AD-230-8 AD-2500-8 AD-800-8 AD500-1 rise time apd
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ad-2500-8ad500-1780nmad-500-8+7 | |
C30902S
Abstract: C30817E C30817 C30955EH
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c30902ehc30921ehc30902shc30921sh+4 | |
SPRU629
Abstract: DSP sdram military DM643 SPRU190 TMS320C6000 TMS320DM643 TMS320DM643AGNZ5 TMS320C643 EMIF sdram full example code EMIF sdram full example
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tms320dm643sprz231asprz231dm643+9 | |
C30955EHContextual Info: Long Wavelength Enhanced Silicon APD C30954EH, C30955EH and C30956EH Series Overview Features and Benefits The Excelitas C30954EH, C30955EH, and C30956EH are general purpose silicon avalanche photodiodes made using a double-diffused "reach through" structure. The design of these |
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c30954ehc30955ehc30956ehdts0308 | |
TMX320C6412GDK
Abstract: tms320 i2c SPRU190 TMS320C6000 TMS320C6412 TMS320C6412AGNZA5
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tms320c6412sprz199isprz199hc6412+6 | |
SPRU190
Abstract: TMS320 TMS320C6000 TMS320C6412 tms320 i2c TMX32 SPRAA EMIF sdram full example code
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tms320c6412sprz199hsprz199gc6412+8 | |
TMS320DM640
Abstract: TMS320DM641 TMS320DM641AGDK5 EMIF sdram full example code SPRS222A SPRz201f
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tms320dm641tms320dm640sprz201gsprz201f+5 | |
SAR500Contextual Info: H1 Series Silicon and InGaAs-APD Receiver DESCRIPTION The H1-Series includes a silicon or InGaAs avalanche photodiode with an optimized low noise hybrid preamplifier for the use in laser range finding, LIDAR, medical and analytical applications. Housed in a |
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sar500sar1500sar3000sat800+1 | |
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Contextual Info: H1 Series Silicon and InGaAs-APD Receiver DESCRIPTION The H1-Series includes a silicon or InGaAs avalanche photodiode with an optimized low noise hybrid preamplifier for the use in laser range finding, LIDAR, medical and analytical applications. Housed in a |
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sar500sar1500sar3000sat800+1 | |
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Contextual Info: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum |
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1100nmld/si-pin-pd-500um-high-speed | |
SILICON APD Pre-AmplifierContextual Info: Silicon APD Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339795-VAR Description CMC Electronics’ 264-339795 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal |
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264-339795-var12-lead550-1050nmopto795-var+1 | |
2SC869Contextual Info: MITSUBISHI SILICON AVALANCHE PHOTODIODES blE D • lflITS PD1XX5 SERIES ^ 4 ^ 0 2 ^ DDIMTGT 535 MITSUBISHI DISCRETE SC FOR OPTICAL COMMUNICATION AND RADAR SYSTEMS TYPE NAME FEATURES DESCRIPTION • High speed response (pulse rise tim e 750ps) PD1XX5 is a silicon avalanche photodiode (Si-APD) |
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750ps400mhz2sc869 | |
PDSIU500FC13-W-0
Abstract: PD-LD PDSIU500200A -0-0-01
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1100nm100micronpdsiu500fc13-w-0pd-ld+1 | |
photodiode Avalanche photodiode
Abstract: photodiode Avalanche photodiode APD FOR POWER 197-70-74-591
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675nm830nmphotodiode avalanche photodiodephotodiode avalanche photodiode apd for power+1 | |
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Contextual Info: Cooled Large Area Blue Silicon Avalanche Photodiode SD 197-70-74-591 Mechanical Dimension in inches SCHEMATIC DESCRIPTION APPLICATIONS The SD 197-70-74-591 is a cooled large area silicon avalanche photodiode APD that provides high gain and low noise, in a hermetic TO-66 package. |
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675nm830nm | |
60r900
Abstract: 750nm apd 400- 700 nm Photodiode apd avalanche Photodiode 300 nm
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675nm60r900750nmapd 400- 700 nm+2 | |
TEC 1240
Abstract: photodiode Avalanche photodiode 830nm Photodiode apd R850
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675nm830nmtec 1240photodiode avalanche photodiode+2 | |
SAR-500
Abstract: ABC550-04 SAR500H2 apd 400- 700 nm IAE200 SAT800H5 SAR500H4 SAR1500H4 SAR500H5 InGaas APD photodiode, 1550 sensitivity
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sar500sar1500sat800iae200+9 | |
394-70-74-591
Abstract: photodiode Avalanche photodiode
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675nm394-70-74-591photodiode avalanche photodiode | |