SILICON -FIELD TRANSISTOR P CHANNEL Search Results

SILICON -FIELD TRANSISTOR P CHANNEL Result Highlights (5)

Part	Manufacturer	Description	Download
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P	PDF
MX0912B351Y	Rochester Electronics LLC	MX0912B351Y - NPN Silicon RF Power Transistor	PDF
TK5R1A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS	Datasheet
TK155E65Z	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ	Datasheet
TK090U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL	Datasheet

SILICON -FIELD TRANSISTOR P CHANNEL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MFE5000 Contextual Info: MFE5 0 0 0 silicon SILICON P-CHANNEL ENHANCEMENT MOS FIELD EFFECT QUAD TRANSISTOR MOS FIELD-EFFECT QUAD TRANSISTOR P-CHANNEL • Monolithic Construction Provides Improved Temperature Tracking • Four Field Effect Transistors in One Package Cut Assembly Costs	OCR Scan	MFE5000 MFE5000	PDF
2N3993 Abstract: 1450 transistor Contextual Info: 2N3993 P-Channel silicon junction field-effect transistor 14.50 Transistor. 1 of 1 Home Part Number: 2N3993 Online Store 2N3993 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r	Original	2N3993 com/2n3993 2N3993 1450 transistor	PDF
2N6897 Abstract: TRANSISTOR 18751 DC/EQUIVALENT transistor 18751 Contextual Info: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,	Original	2N6897 -100V, -100V 2N6897 2N689ther TRANSISTOR 18751 DC/EQUIVALENT transistor 18751	PDF
2N6897 Contextual Info: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor January 1997 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,	Original	2N6897 -100V, -100V 2N6897 2N689opment.	PDF
2N6897 Contextual Info: 2N6897 -12A, -100V, P-Channel Enhancement Mode Power MOS Field Effect Transistor December 2001 Features Description • -12A, -100V The 2N6897 is an P-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching converters,	Original	2N6897 -100V, -100V 2N6897 2N68opment.	PDF
NE5814 Abstract: NE5814M14 HS350 microphone sensor Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NE5814M14 P-CHANNEL LOW NOISE MOS FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF MICROPHONE 4-PIN LEAD-LESS MINIMOLD M14, 1208 PKG DESCRIPTION The NE5814M14 is a P-channel silicon MOS FET designed for use as impedance converter for microphone.	Original	NE5814M14 NE5814M14 NE5814or PU10628EJ01V0DS NE5814 HS350 microphone sensor	PDF
MPF256 Abstract: field-effect transistor Contextual Info: MPF256 silicon Advance Information JUNCTION FIELD-EFFECT TRANSISTOR SILICON IM-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S IL IC O N N -C H A N N E L . . . d e p le tio n m ode ju n c tio n fie ld -e ffe c t tra n s is to r designed f o r lo w nois* general a m p lifie r a p p lic a tio n s .	OCR Scan	MPF256 MPF256 field-effect transistor	PDF
Contextual Info: 2N5116 P-Channel silicon junction field-effect transistor 4.85 Transistors. 1 of 1 Home Part Number: 2N5116 Online Store 2N5116 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r	Original	2N5116 com/2n5116 2N5116	PDF
Contextual Info: 2N5115 P-Channel silicon junction field-effect transistor 6.00 Transistors. 1 of 1 Home Part Number: 2N5115 Online Store 2N5115 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r	Original	2N5115 com/2n5115 2N5115	PDF
2n5460 Contextual Info: 2N5460 P-Channel silicon junction field-effect transistor 2.00 Transistors. 1 of 1 Home Part Number: 2N5460 Online Store 2N5460 Diodes P- C hannel s ilic o n junct io n field- effec t trans is t o r	Original	2N5460 com/2n5460 2N5460	PDF
BFR101A Abstract: BFR101 BFR101B Contextual Info: • b b 5 3 T 3 1 □ □ 2 5 1 CÌ0 fisi B I A P X b?E ]> N AMER P H I L I P S / D I S C R E T E BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source	OCR Scan	bb53T31 251ciÃ BFR101A BFR101B BFR101 BFR101A BFR101B	PDF
3SK131 Abstract: 0580S Contextual Info: MOS FIELD EFFECT TRANSISTOR 3SK131 RF AM P. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES PACKAGE DIMENSIONS • Su itab le fo r use as R F a m p lifie r in V H F T V tuner. in millim eter* • L o w C rIS : 0 .0 5 p F T Y P .	OCR Scan	3SK131 3SK131 0580S	PDF
3SK131 Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • S uita ble for use as RF a m p lifie r in V H F T V tun er. • Low • High • Low NF : 1.3 dB T Y P .	OCR Scan	3SK131 3SK131	PDF
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .	OCR Scan	3SK131	PDF

MOSFET P-channel SOT-23 Abstract: 80v P-Channel MOSFET C8120 "Marking code" 2A SOT-23 p-channel sot-23 p-channel SOT-23 20V MOSFET SOT-23 Contextual Info: CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed	Original	CMPDM8120 CMPDM8120 C8120 OT-23 360mA 810mA 950mA 25-July MOSFET P-channel SOT-23 80v P-Channel MOSFET C8120 "Marking code" 2A SOT-23 p-channel sot-23 p-channel SOT-23 20V MOSFET SOT-23	PDF
CMPDM8002A Abstract: C802A Contextual Info: CMPDM8002A SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM8002A is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed	Original	CMPDM8002A CMPDM8002A C802A OT-23 500mA, 25-July 200mA C802A	PDF
2SK515 Abstract: 30X33 Contextual Info: JUNCTION FIELD EFFECT TRANSISTOR 2S K 515 AUDIO FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters -8 • High Voltage V p sx - 50 V • High I Yfs I I yf l I *4 .1 mS TYP. 0-65 Î? is	OCR Scan		PDF
CTLDM8120-M832D Abstract: TLM832D marking code rg Contextual Info: CTLDM8120-M832D SURFACE MOUNT TLMTM DUAL, P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8120M832D is an Enhancement-mode Dual P-Channel Field Effect Transistor, manufactured by the P-Channel	Original	CTLDM8120-M832D CTLDM8120M832D TLM832D 54mm2 18-September 950mA, CTLDM8120-M832D marking code rg	PDF
Contextual Info: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for	Original	CEDM8001 100mW OT-883L CEDM8001: 100mA 29-November	PDF
CEDM8001 Contextual Info: Central CEDM8001 TM Semiconductor Corp. SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM8001 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for	Original	CEDM8001 CEDM8001 OT-883L 100mW CEDM8001: 100mA 16-March	PDF
3SK87 Abstract: 2SD20 Tma UHF Contextual Info: NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 3SK87 RF AM P. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR DISK MOLD FEATURES P A C K A G E D IM E N S IO N S { U n it : m m • Suitable fo r use as RF a m plifier in UHF T V tuner.	OCR Scan	3SK87 3SK87 2SD20 Tma UHF	PDF
C81 diode Abstract: code C81 Contextual Info: CMLDM8120 SURFACE MOUNT PICOminiTM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for	Original	CMLDM8120 OT-563 810mA 950mA, 360mA 26-March C81 diode code C81	PDF
3SK74 Contextual Info: NEC MOS FIELD EFFECT TRANSISTOR ELECTRON DEVICE 3SK74 RF AMPLIFIER & MIXER FOR VHF TV N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR "DISKMOLD" FEATURES PACKAGE DIM EN SIO N S Unit : mm • Suitable fo r Use as RF A m p lifie r & M ixer in V H F TV	OCR Scan	3SK74 3SK74	PDF
3SK132 Abstract: 3SK132A si2494 g2sc ETEL Contextual Info: MOS FIELD EFFECT TRANSISTOR 3SK132A RF AM P. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Suitable for use as RF amplifier in UHF TV tuner. RF Amp. for half wave length resonator : X/2	OCR Scan	3SK132A 3SK132 3SK132A si2494 g2sc ETEL	PDF

SILICON -FIELD TRANSISTOR P CHANNEL Search Results

SILICON -FIELD TRANSISTOR P CHANNEL Result Highlights (5)

SILICON -FIELD TRANSISTOR P CHANNEL Datasheets Context Search

MFE5000

2N3993

2N6897

2N6897

2N6897

NE5814

MPF256

2n5460

BFR101A

3SK131

3SK131

MOSFET P-channel SOT-23

CMPDM8002A

2SK515

CTLDM8120-M832D

CEDM8001

3SK87

C81 diode

3SK74

3SK132