SILCON DIODE Search Results

Contextual Info: SEMICONDUCTOR 1N4756A TECHNICAL DATA ZENER DIODE SILCON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES 2008. 6. 18 Revision No : 0 1/1

1N5253P

Abstract: 1N5231P 1N5242P
Contextual Info: 1N5221PT CHENMKO ENTERPRISE CO.,LTD THRU AXIAL LEAD SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 2.4V TO 200V 1N5281PT FEATURE * * * * * High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.

CHEZ6V8BDWGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHEZ6V8BDWGP SURFACE MOUNT ZENER SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 6.8V FEATURE * * * * * * High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.

1N4756A

Abstract: diode iz zener silcon diode
Contextual Info: SEMICONDUCTOR 1N4756A TECHNICAL DATA ZENER DIODE SILCON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES Normal Voltage Tolerance about 5% B C DIM MILLIMETERS A 4.2~5.2 B MIN 25.4 2.0~2.7 C 0.71~0.86 D A B D MAXIMUM RATING Ta=25 CHARACTERISTIC

Contextual Info: MCL4148 THRU MCL4448 05 G 3 1 la .3 ss 5 SURFACE MOUNT SWITCHING DIODES 0. Saving apace Fits SOD-323/SOT-23 footprints • Micro Melf package • Silcon epitaxial planar • 0.051(1.30) 0.047(1.20) 0.079(2.00) 0.071(1.80) Case: glass case Characteristic

zener 12V 400 mW

Abstract: CHPZ6V2 dual zener ZENER 15.2 Zener Diode SOT-23 1.2V zener diodes CHPZ14VPT dual zener common anode CHPZ19VPT
Contextual Info: CHPZ3V6PT CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT ZENER SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 3.6V TO 33V CHPZ33VPT FEATURE High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.

CHMZ6.8VGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHMZ6.8VGP SURFACE MOUNT ZENER SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 6.8V FEATURE * * * * * * High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.

1N4760

Abstract: silcon diode 1N4744P 1N4747P 1N4743P 1N4756P
Contextual Info: 1N4728PT CHENMKO ENTERPRISE CO.,LTD THRU AXIAL LEAD SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 3.3V TO 100V 1N4764PT FEATURE * * * * * High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.

CHPZ9V1GP

Abstract: CHPZ10VGP CHPZ11VGP CHPZ12VGP CHPZ13VGP CHPZ14VGP CHPZ15VGP CHPZ16VGP CHPZ17VGP CHPZ18VGP
Contextual Info: CHPZ3V6GP CHENMKO ENTERPRISE CO.,LTD THRU SURFACE MOUNT ZENER SILICON PLANAR POWER ZENER DIODES VOLTAGE RANGE 3.6V TO 33V CHPZ33VGP FEATURE High temperature soldering type. ESD rating of class 3 >16 kV per human body model. Silicon planar zener diodes. Silcon-oxide passivated junction.

LMT339N

Abstract: LMT339D LMT339 LMT2901D LMT2901N LMT2901 LMT3 motorola linear I30VDC MIL-STD-833D
Contextual Info: MOTOROLA LMT339, LMT2901 • SEMICONDUCTOR TECHNICAL DATA ADVANCE INFORMATION QUAD COMPARATORS QUAD SINGLE SUPPLY COMPARATORS SILCON MONOLITHIC INTEGRATED CIRCUIT These comp aratcrs are da signed for use in level detection, low level sensing and memory applications In Consumer Automotive and Industrial

UA739 equivalent

Abstract: MA739C TA739 nA739 uA749 phono preamplifier circuit diagram ua739 MA739 MA749 riaa preamplifier circuit diagram
Contextual Info: F A I R C H I L MA739 • fiA749 Dual Audio Operational Amplifier/Preamplifier D A Schlumberger Company Linear Products D escrip tion The n A739 and #iA749 consist of two identical HighGain Operational Amplifiers constructed on a single silcon chip using the Fairchild Planar epitaxial

diode ba110

Abstract: BA142 BA110 BA 141 diode BB142 BB141 ba112 BA 30 C Diode BAY 45 S3 marking DIODE
Contextual Info: Silicon Capacitance Diodes Variable Capacitance Silcon Diodes for automatic frequency control Type BA 110 BA 110 G 1 C h a ra c te ris tic s @ T am b = 2 5 °C @ VR = 2 V f = 30 M Hz @ Ip = 60 m A @ VR = 10V r¡ Q Q l/f V I r nA 1 540 < 0,95 < 50 V BR}R V

Contextual Info: TA IW AN LIT ON E L E C T R O N I C litem i M IE D 0 0 3 5 1 ^ 5 0 0 0 3 2 4 Û STÔ • T L I T : INFRARED EMITTING DIODE LTE-239/239C - >' ' T 4 M 3 FEATURES • SELECTED TO SPECIFIC O N -LIN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y RANGES. • H IG H POWER O UT PUT.

5238A

Abstract: lxe diode LTE5238A
Contextual Info: litem : sru r Ü ' H ;' GaAlAs T-13/4 STANDARD 50 INFRARED EMITTING DIODE LTE-4238/4238C/LXE -5*3ftA/Ba3*AC ^'11 • ff" . FEATURES Sijfloohd • SELECTED TO SPECIFIC ON-LINE INTENSITY AND RADIANT INTENSITY RANGES. • HIGH POWER OUT PUT. • MECHANICALLY AND SPECTRALLY MATCHED TO

CP220x

Abstract: power wizard 1.0 controller "embedded systems" ethernet protocol CP2201 c8051f340 C8051F flash interface C8051F340 C8051F120 Target Board Ethernet-MAC ic power wizard 1.1 controller
Contextual Info: Embedded Ethernet Solutions H I G H L Y- I N T E G R A T E D , G L O B A L L Y- C O M P L I A N T FEATURES PoE Powered Device Controller • Complete power management solution • Integrated diode bridges; transient surge suppressor • Switching regulator with integrated driver FET

Contextual Info: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device

RB053L-30

Contextual Info: Schottky barrier diode Silicon Epitaxial Planer RB063L-30 Limits Reverse voltage (repetitive peak) VRM 30V Reverse voltage (DC) VR IO* 30V IFSM 70A Average rectified forward current Forward current surge peak (60Hz: ) DIMENSION (UNIT:mm) CATHODE MARK 1.5±0.2

Contextual Info: FEATURES • SELECTED TO S P E C IF IC O N -L IN E IN T E N S IT Y R A D IA N T IN T E N S IT Y R A N G E S . • H IG H POW ER O U T PU T. • M E C H A N IC A L L Y TO TH E S IS T O R . A N D SPEC TR ALLY L T R -3 2 0 8 S E R IE S OF M ATCHED J. PHOTOTRAN­

Contextual Info: TAIWAN LITO N E L E C T R O N I C LITEMi 4TE D G A A IA S 5 $ • ôfiaSh'iS G D 0 3 2 b O O'iS ■ T L I T T -1 3 /4 IN F R A R E D S T A N D A R D E M IT T IN G LTE-5238A/5238AC FEATURES •-S E L E C T E D TO S P E C IF IC O N -L IN E IN T E N S IT Y A N D R A D IA N T IN T E N S IT Y R A N G E S .

KBL06 AC

Abstract: KBP12 KBPC806G KBL005G kbl06g
Contextual Info: V V- V ¡s 5 ¡v v \ - \-é>^ •A\ V ' WAFAD001 “» «j ''"tu«: t / -, /7 E 1 27862 ;.? M V GLASS PASSIVATED BRIDGE RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE TYPE Maximum Forward Voltage @ 2 5 t Ta Maximum Peak Reverse Voltage Maximum Average Rectified Current

Contextual Info: HMC1063LP3E v00.1012 mixers - i/q mixers, irms & receivers - smT GaAs MMIC I/Q MIXER 24 - 28 GHz Typical Applications Features The Hmc1063LP3e is ideal for: Low LO Power: 10 dBm • Point-to-Point and Point-to-multi-Point radio Wide iF Bandwidth: Dc - 3 GHz

Contextual Info: HMC1063LP3E v00.1012 mixers - i/q mixers, IRMs & Receivers - SMT GaAs MMIC I/Q MIXER 24 - 28 GHz Typical Applications Features The HMC1063LP3E is ideal for: Low LO Power: 10 dBm • Point-to-Point and Point-to-Multi-Point Radio Wide IF Bandwidth: DC - 3 GHz

Contextual Info: HMC1063LP3E v01.0214 mixers - i/q mixers, IRMs & Receivers - SMT GaAs MMIC I/Q MIXER 24 - 28 GHz Typical Applications Features The HMC1063LP3E is ideal for: Low LO Power: 10 dBm • Point-to-Point and Point-to-Multi-Point Radio Wide IF Bandwidth: DC - 3 GHz

Contextual Info: HMC1063LP3E v00.1012 mixers - i/q mixers, IRMs & Receivers - SMT GaAs MMIC I/Q DOWNCONVERTER 24 - 28 GHz Typical Applications Features The HMC1063LP3E is ideal for: Low LO Power = 10 dBm • Point-to-Point and Point-to-Multi-Point Radio Wide IF Bandwidth: DC - 3 GHz