SIGC144T170R2C Search Results

SIGC144T170R2C Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIGC144T170R2C		Infineon Technologies	IGBT Chips; Package: --; Technology: Low Loss IGBT 2; V_DS (max): 1,700.0 V; I_C(max): 75.0 A; V_CE(sat) (max): 3.2 V; V_GE(th) (min): 4.5 V;	Original	PDF	121.65KB	5
SIGC144T170R2C		Infineon Technologies	SIGC144T170R2C, 1700V, 75A	Original	PDF	72.37KB	4
SIGC144T170R2C		Infineon Technologies	IGBT Chip in NPT-Technology	Original	PDF	74.18KB	4

SIGC144T170R2C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistors ai 757 Abstract: SIGC144T170R2C 1136 GE Contextual Info: Preliminary SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only	Original	SIGC144T170R2C Q67041-A4696A001 7361M, transistors ai 757 SIGC144T170R2C 1136 GE	PDF
Contextual Info: SIGC144T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology • 280 µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • chip only C Applications: • drives G Chip Type VCE	Original	SIGC144T170R2C L7361M,	PDF
Contextual Info: SIGC144T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology  280µm chip  short circuit prove  positive temperature coefficient  easy paralleling  Qualified according to JEDEC for target applications Chip Type VCE SIGC144T170R2C 1700V	Original	SIGC144T170R2C SIGC144T170R2C L7361M,	PDF
transistors ai 757 Abstract: AI 757 AI 757 datasheet transistor ai 757 SIGC144T170R2C 1136 GE Contextual Info: SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only G Applications:	Original	SIGC144T170R2C Q67041-A4696A001 7361M, transistors ai 757 AI 757 AI 757 datasheet transistor ai 757 SIGC144T170R2C 1136 GE	PDF
Contextual Info: SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only G Applications:	Original	SIGC144T170R2C Q67041-A4696A001 7361M,	PDF
A001 Abstract: SIGC144T170R2C Contextual Info: Preliminary SIGC144T170R2C IGBT Chip in NPT-technology C FEATURES: • 1700V NPT technology • 280µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC144T170R2C 1700V This chip is used for: • chip only	Original	SIGC144T170R2C Q67041-A4696sawn 7361M, A001 SIGC144T170R2C	PDF
SIGC144T170R2C Contextual Info: SIGC144T170R2C IGBT Chip in NPT-technology Features: • 1700V NPT technology • 280 µm chip • short circuit prove • positive temperature coefficient • easy paralleling This chip is used for: • chip only C Applications: • drives G Chip Type VCE	Original	SIGC144T170R2C L7361M, SIGC144T170R2C	PDF