SIEMENS TO92 N3 S Search Results
SIEMENS TO92 N3 S Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 74AC11000N |
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Quadruple 2-Input Positive-NAND Gates 16-PDIP -40 to 85 |
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| 74AC11004DW |
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Hex Inverters 20-SOIC -40 to 85 |
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| 74AC11074D |
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Dual Positive-Edge-Triggered D-Type Flip-Flops With Clear and Preset 14-SOIC -40 to 85 |
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| 74AC11244PWR |
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Octal Buffers/Drivers 24-TSSOP -40 to 85 |
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| 74AC11257N |
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Quadruple 2-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 20-PDIP -40 to 85 |
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SIEMENS TO92 N3 S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0110 TN0110 DSFP-TN0110 A102907 | |
P-Channel FET 100v to92Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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TP2635 263pF TP2635 DSFP-TP2635 A102607 P-Channel FET 100v to92 | |
VP3203N3-GContextual Info: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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VP3203 VP3203 O-243AA OT-89) O-243, DSFP-VP3203 A020408 VP3203N3-G | |
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Contextual Info: TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TP0606 TP0606 DSFP-TP0606 A113007 | |
TN0606
Abstract: marking TN
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TN0606 100pF TN0606 DSFP-TN0606 A020508 marking TN | |
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Contextual Info: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0610 100pF TN0610 DSFP-TN0610 A020508 | |
VN2224Contextual Info: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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VN2224 VN2224 DSPD-3TO92N3, D061608. DSFP-VN2224 A070108 | |
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Contextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0620 110pF -55OC TN0620 DSFP-TN0620 A102907 | |
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Contextual Info: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing |
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VN2224 VN2224 DSFP-VN2224 A120307 | |
siemens to92 n3 sContextual Info: TN0610 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0610 100pF TN0610 DSPD-3TO92N3, D070808. DSFP-TN0610 NR071508 siemens to92 n3 s | |
marking DN
Abstract: DN2535
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DN2535 O-220, DSFP-DN2535 A100907 marking DN | |
marking n3
Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
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TN0604 140pF MS-013, DSFP-TN0604 A102507 marking n3 TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92 | |
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Contextual Info: TN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0606 100pF TN0606 DSPD-3TO92N3, D070808. DSFP-TN0606 NR071508 | |
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Contextual Info: Supertex inc. TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage |
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TN0604 140pF DSFP-TN0604 C082012 | |
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1W SOT-23
Abstract: TN2106K1-G
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TN2106 O-236, TN2106 DSFP-TN2106 A020508 1W SOT-23 TN2106K1-G | |
TRANSISTOR MARKING CODE TPContextual Info: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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TP2104 fr12mm O-236, TP2104 DSFP-TP2104 A112807 TRANSISTOR MARKING CODE TP | |
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Contextual Info: Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage |
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TP0604 DSFP-TP0604 C082012 | |
TP0604N3-GContextual Info: Supertex inc. TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance |
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TP0604 DSFP-TP0604 C082012 TP0604N3-G | |
SiTN
Abstract: TN0106 TN0106N3-G TN1506NW VF15
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TN0106 DSFP-TN0106 B030411 SiTN TN0106 TN0106N3-G TN1506NW VF15 | |
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Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0104 TN0104 O-243AA OT-89) O-243, DSFP-TN0104 A122707 | |
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Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. |
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DN2530 DN2530 DSFP-DN2530 A103108 | |
SiTNContextual Info: Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold - 2.0V max. High input impedance Low input capacitance - 50pF typical Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage |
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TN0110 DSFP-TN0110 B030411 SiTN | |
DN5TWContextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. |
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DN2530 DSFP-DN2530 A091108 DN5TW | |
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Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
Original |
TN0110 DSFP-TN0110 A091208 | |