SIEMENS TO92 N3 S Search Results
SIEMENS TO92 N3 S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0110 TN0110 DSFP-TN0110 A102907 | |
P-Channel FET 100v to92Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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TP2635 263pF TP2635 DSFP-TP2635 A102607 P-Channel FET 100v to92 | |
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Contextual Info: TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TP0606 TP0606 DSFP-TP0606 A113007 | |
marking n3
Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
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TN0604 140pF MS-013, DSFP-TN0604 A102507 marking n3 TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92 | |
1W SOT-23
Abstract: TN2106K1-G
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TN2106 O-236, TN2106 DSFP-TN2106 A020508 1W SOT-23 TN2106K1-G | |
SiTN
Abstract: TN0106 TN0106N3-G TN1506NW VF15
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TN0106 DSFP-TN0106 B030411 SiTN TN0106 TN0106N3-G TN1506NW VF15 | |
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Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0104 TN0104 O-243AA OT-89) O-243, DSFP-TN0104 A122707 | |
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Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. |
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DN2530 DN2530 DSFP-DN2530 A103108 | |
sitn
Abstract: TN0702N3-G
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TN0702 130pF DSFP-TN0702 B031411 sitn TN0702N3-G | |
marking TNContextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This |
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TN0620 110pF DSFP-TN0620 A0912008 marking TN | |
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Contextual Info: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical) Fast switching speeds Low on-resistance |
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TN0702 130pF DSFP-TN0702 B031411 | |
VP3203N3-G
Abstract: sivp
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VP3203 DSFP-VP3203 A012009 VP3203N3-G sivp | |
TN1LContextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage |
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TN0104 DSFP-TN0104 C071411 TN1L | |
mosfet n3Contextual Info: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices |
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LP0701 DSFP-LP0701 A012409 mosfet n3 | |
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Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain |
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VN2460 DSFP-VN2460 A011409 | |
DN5m
Abstract: sot-89 marking dn
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DN3545 DSFP-DN3545 A090908 DN5m sot-89 marking dn | |
siemens fet to92
Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
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DN3545 DSFP-DN3545 B052009 siemens fet to92 dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G | |
b0705Contextual Info: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance |
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TN0604 DSFP-TN0604 B070511 b0705 | |
B0728
Abstract: 125OC TN2640 TN2640ND sitn 620
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TN2640 DSFP-TN2640 B072809 B0728 125OC TN2640 TN2640ND sitn 620 | |
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Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain |
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2N7000 2N7000 DSFP-2N7000 B091008 | |
DN3545
Abstract: DN3545N3 DN3545N8 DN3545ND
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DN3545 O-243AA: O-243AA* 200mA DN3545N3 DN3545N8 DN3545ND OT-89. DSPD-3TO92N3 DN3545 DN3545N3 DN3545N8 DN3545ND | |
2N7008Contextual Info: VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 220V 1.25Ω 240V 1.25Ω Order Number / Package TO-92 20-Pin C-Dip 5.0A – VN2222NC 5.0A VN2224N3 – 7 Advanced DMOS Technology High Reliability Devices |
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VN2222 VN2224 VN2224N3 20-Pin VN2222NC devi550 VN2450 VN2460 OT-23 OT-89 2N7008 | |
2n7000 equivalent
Abstract: equivalent of 2n7000
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2N7000 DSPD-TO92TapingSpec B070610 2n7000 equivalent equivalent of 2n7000 | |
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Contextual Info: DN3535 DN3535 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die 350V 10Ω 200mA DN3535N8 DN3535NW * Same as SOT-89. Products shipped on 2000 piece carrier tape reels. |
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DN3535 200mA O-243AA* DN3535N8 DN3535NW OT-89. OT-23 O-220 OT-89 | |