SIEMENS TO92 N3 S Search Results

Contextual Info: TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

P-Channel FET 100v to92

Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

marking n3

Abstract: TN0604N3 75E1 MS-013 TN0604 TN0604N3-G TN0604WG-G n-channel fet to-92
Contextual Info: TN0604 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

1W SOT-23

Abstract: TN2106K1-G
Contextual Info: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

SiTN

Abstract: TN0106 TN0106N3-G TN1506NW VF15
Contextual Info: Supertex inc. TN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► ►► ►► ►► ►► ►► ►► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven,

Contextual Info: TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

sitn

Abstract: TN0702N3-G
Contextual Info: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical)

marking TN

Contextual Info: TN0620 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: Supertex inc. TN0702 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.0V max. On-resistance guaranteed at VGS = 2, 3, and 5V High input impedance Low input capacitance (130pF typical) Fast switching speeds Low on-resistance

VP3203N3-G

Abstract: sivp
Contextual Info: VP3203 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP3203 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

TN1L

Contextual Info: Supertex inc. TN0104 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 1.6V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

mosfet n3

Contextual Info: LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices

Contextual Info: VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

DN5m

Abstract: sot-89 marking dn
Contextual Info: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

siemens fet to92

Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
Contextual Info: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

b0705

Contextual Info: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN0604 General Description Low threshold 1.6V max. High input impedance Low input capacitance (140pF typical) Fast switching speeds Low on-resistance

B0728

Abstract: 125OC TN2640 TN2640ND sitn 620
Contextual Info: TN2640 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain

DN3545

Abstract: DN3545N3 DN3545N8 DN3545ND
Contextual Info: DN3545 DN3545 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-243AA: BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 450V 20Ω 200mA DN3545N3 DN3545N8 DN3545ND * Same as SOT-89. DN5M*

2N7008

Contextual Info: VN2222 VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 220V 1.25Ω 240V 1.25Ω Order Number / Package TO-92 20-Pin C-Dip 5.0A – VN2222NC 5.0A VN2224N3 – 7 Advanced DMOS Technology High Reliability Devices

2n7000 equivalent

Abstract: equivalent of 2n7000
Contextual Info: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: DN3535 DN3535 New Product N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-243AA* Die 350V 10Ω 200mA DN3535N8 DN3535NW * Same as SOT-89. Products shipped on 2000 piece carrier tape reels.