SIEMENS TC 35 Search Results

siemens igbt BSM 300

Abstract: siemens igbt BSM 200 GA 120 NC4000
Contextual Info: ta□ E D • SIEMENS ÖEBSbOS GDMSTEfl T2T ISIE6 SIEMENS AKTIENGESELLSCHAF -r -3 9 -^ 5 BSM 300 GA 120 D IGBT Module Preliminary Data VCE = 1200 V = 400 A at Tc = 25 C = 300 A at 80 'C Ic Ic Tc = • Power module • Single switch • Including fast free-wheel diodes

BSM25GD120D

Contextual Info: bGE » ûaaSbGS 0045032 47T « S I E G • SIEMENS SIEMENS AKTIENGESELLSCHAF - 9 7 BSM 25 GD 120 D IGBT Module Preliminary Data V CE = 1200 V / c = 6 x 35 A at Tc = 25 C I c = 6 x 25 A at Tc = 80 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes

LF50

Contextual Info: bOE D • fl23SbGS DDi4b551 57b « S I E G -7=<Y/-&7 SIEMENS SFH4210 SIEMENS AKTIENGESELLSCHAF INFRARED EMITTING DIODE T018PA C K A G E ^ ■L Preliminary Data Sheet FEATURES Maximum Ratings * InGaAsP/lnP IRED Operating Temperature Range at Case Tc Storage Temperature Range (T3To)

Contextual Info: SIEMENS SIPMOS Power Transistor • • • N channel Enhancem ent mode FREDFET Type ^DS BUZ 205 400 V ^DS on 6.0 A 1.0 ß Maxim um Ratings Parameter Continuous drain current, Tc = 35 "C Pulsed drain current, Tc = 25 ”C Drain-source voltage Drain-gate voltage, R GS = 20 kQ

Contextual Info: SIEMENS SIPMOS Power Transistor • • • N channel Enhancement mode Avalanche-rated Type ^DS ¡0 11DS on BUZ 78 800 V 1.5 A 9.0 £2 Maxim um Ratings Parameter Continuous drain current, Tc = 25 'C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Timax

BUZ171

Contextual Info: SIEMENS SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type ^ DS /□ ^DS on BUZ 171 -5 0 V -8 .0 A 0.3 Q Maximum Ratings Parameter Continuous drain current, Tc = 30 "C Pulsed drain current, Tc = 25 "C Avalanche energy, single pulse

Contextual Info: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type_ BUZ 41 A 500 V Id ^ D S on 4.5 A 1.5 n Maximum Ratings Parameter Continuous drain current, Tc = 36 "C Pulsed drain current, Tc = 25 °C Avalanche current, limited by Ttmui

Contextual Info: SIEMENS SIPMOS Power Transistor • • • BUZ 60 N channel Enhancement mode Avalanche-rated VPT05381 Type V'ds BUZ 60 400 V 5.5 A ^DS on Package 1* Ordering Code 1.0 Q TO -220 AB C67078-S1312-A2 M axim um Ratings Parameter Symbol Tc = 36 "C Tc = 25 "C

Contextual Info: SIEMENS SIPWIOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type ^DS i A ^DS on) BUZ 312 1000 V I 6.0 A 1.5 n Maxim um Ratings Parameter Continuous drain current, Tc = 33 ‘ C Pulsed drain current, Tc = 25 "C Avalanche current, limited by Ti max

BUZ72A

Contextual Info: SIEMENS SIPMOS Power Transistors • N channel • Enhancement mode • Avalanche-rated T yp e_ 17DS ID ^ DS on BUZ 72 100V 10 A 0 .2 0 £2 BUZ 72 A 100 V 9.0 A 0.25 Í2 Maximum Ratings Parameter Continuous drain current, Tc = 25 C Pulsed drain current, Tc = 25 "C

siemens ha 8000

Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
Contextual Info: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 94 • N channel • Enhancement mode Type V Ds BUZ 94 600 V /d 7.8 A ^DS on Package 1> Ordering Code 0.9 Q TO-204 AA C67078-A1019-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 27 'C h 7.8 Pulsed drain current, Tc = 25 ”C

3Tg 21 10 siemens

Abstract: BSM25GB100D 3Tg 21 20 siemens siemens igbt BSM 150 Gb 160 d siemens 3TG 3TG siemens pl0l siemens igbt BSM 300 T-23 siemens igbt BSM 25 Gb 100 d
Contextual Info: bGE D • A23SbOS OGMSöDfl ISO ■ S I E G Sl EM ENS SIEMENS AKTIEN6ESELLSCHAF T - 2 3 ^ 0 7 BSM 25 GB 100 D BSM 25 G AL 100 D IGBT Module Preliminary Data vCE= 1000 v / C = 2 x 35 A at Tc = 25 C / c = 2 x 25 A at Tc = 80 C • Power module • Half-bridge/Chopper

siemens igbt BSM 50 gb 120 d

Contextual Info: SIEMENS IGBT Module Preliminary Data BSM 75 GB 120 D BSM 75 GAL 120 D VCE = 1200 V / c = 2 x 100 A at Tc = 25 "C I c = 2 x 75 A at Tc = 80 C • • • • • Power module Half-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate

BUZ84

Abstract: DIODE BUZ
Contextual Info: SIEMENS SIPMOS Power Transistors • • N channel Enhancem ent mode Type ^DS ¡0 Tc ^DS on BUZ 84 800 V 5.3 A 25 ‘ C 2.0 a BUZ 84 A 800 V 6.0 A 29 "C 1.5 a M axim um Ratings Parameter Continuous drain current Pulsed drain current, Tc = 25 "C Drain source voltage

buz77a

Abstract: st BUZ
Contextual Info: SIEMENS SIPMOS Power Transistors • • • N channel Enhancem ent mode Avalanche-rated Type ^ DS Id Tc BUZ 77 A 600 V 2.7 A 31 "C 4.0 £2 BUZ 77 B 600 V 2.9 A 29 "C 3.5 Q I ^DS on M axim um Ratings Parameter Continuous drain current Pulsed drain current, Tc = 25 "C

TCA 205 N

Abstract: TCA 200 y TCA 150 t IEB00806 IC for Inductive Proximity Switches TCA 150
Contextual Info: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar IC Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

transistor 355

Abstract: 530AD
Contextual Info: SIEMENS BUZ 355 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 355 Vbs 800 V 6A flbston Package Ordering Code 1.5 w TO-218AA C67078-S3107-A2 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 29 °C

Contextual Info: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; • Lower output saturation voltage Is < 1 mA • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

NF 841 switching diode

Abstract: DIODE NF-841 TCA355B
Contextual Info: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar 1C Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

8 PIN SMD IC 305

Abstract: TCA355B NF 841 switching diode TCA 355 TCA 150 t TCA355G
Contextual Info: SIEMENS TCA 305 TCA 355 Proximity Switch Bipolar IC Features • Lower open-loop current consumption; Is < 1 mA • Lower output saturation voltage • The temperature dependence of the switching distance is lower and compensation of the resonant circuit TC temperature coefficient is easier

BPX61

Abstract: Siemens Si PIN photodiode GM006011
Contextual Info: SIEMENS BPX 61 Silicon Photodiode Dimensions in inches mm .570 ¡14.5) .134 (3.4) '.116(3.0) .491 (12.5) Cathode 'SI Radiant sensitive area t 0.373(9.5) 0 .354 (9.0) ‘0 .326 (8.3) 0.314(8.0) .200 (5.08) Tc — 0 .018 (0.45) .069(1.75) .061 (1.55)" >39(1.0)

Contextual Info: SIEMENS BUZ 357 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 357 1000 V 5.1 A ^bS on Package Ordering Code 2w TO-218 AA C67078-S3110-A2 Maximum Ratings Parameter Symbol Continuous drain current Id Tc = 25 °C

Contextual Info: SIEMENS KSY13 Position Hall Sensor Features • • • • High sensitivity High operating temperature Low offset voltage Low TC of sensitivity and internal resistance • Plastic miniature package SOT 143 for surface mounting SMT Typical applications • Digital speed sensors