SIEMENS S 187 B Search Results

BPY62

Abstract: Phototransistor to-18 glass lens phototransistor
Contextual Info: SIEMENS AKTIENGESEL LSCH AF 47E D flS3SbGS 002750b S « S I E Û SIEM ENS BPY62 SERIES PHOTOTRANSISTOR Package Dimensions in Inches mm m 018 I0 45) — ,6 a 217 (5 5) 211 (5 35) 0 1 (2 54) 187 \ (4 75) Max \ \ Radiant Sensitive Area Maximum Ratings Operating and Storage Temperature (T ^ , T^ .

SFH551v

Abstract: EH4001
Contextual Info: SIEMENS * SFH551 RIGHT ANGLE HOUSING SFH551V INTEGRATED PHOTODETECTOR for PLASTIC FIBER Package Dimensions in Inches mm SFH551V SFH551 Surface not flat 093(2.35) .087 (2.2) s 1— 182 (4.6) ^071 ( 1.8) ^ 0 4 7 (1 .2 ) .307 (7.8) .295 (7.5) n H .187(4.75)

Contextual Info: SIEMENS CMPNTS-, OPTO MME D Ö23b32b [1005120 7 * S I E X SIEM ENS SFH 401 SERIES GaAs INFRARED EMITTER T-41-U Package Dimensions in Inches mm .187(476) .181(4.6) 0.10 ( 2 .54) .216(55) ¿ I f (535) FEATURES Maximum Ratings • Package: 18 A 3 DIN 41 876 (TO 18),

S187B

Abstract: S 187 Siemens Siemens S 187 B s 89 siemens Prescaler Siemens S-89 Siemens Frequency Divider Siemens S 89 s 89 c Q67000-H1694
Contextual Info: Variable Divider for 500 MHz S 89 B ipolar 1C Type S S 89 O rdering Code Package Q67000-H1694 P-DIP-14 Frequency divider with the preseiectabie divider ratios 50/51,100/101,100/102, 200/202. Maximum input frequency is 500 MHz for divider ratios 100/102 and 200/202, or 250 MHz

siemens b82723

Abstract: siemens B82724 B82722-A2202-N1 siemens B82722-A2301-N1 B82723-A2402-N1 B82722-A2501-N1 B82724-B2602-N1 B82725-A2103-N1 B82722-A2302-N1 B82721-A2122-N20
Contextual Info: Drosseln für Netzanwendungen Stromkompensierte Ringkern-Zweifachdrosseln B82721 … B82725 Aufbau ● Stromkompensierte Ringkern-Zweifachdrossel ● ● ● ● mit Ferritkern Eingebaut in Kunststoffbecher aus Polycarbonat Epoxidharzverguß B82724-E ohne Verguß Öko-Drossel

siemens 230 96 O

Abstract: R60 VRM
Contextual Info: Power Relay RM 5/6 2 / 3 po le 10 / 16 A, DC- o r A C -coil • • • • 2 N/O or 3 N/O contacts 3 mm contact gap Push-to-test-button Plug-in version, PCB terminals, chassis- or DIN-rail m ount Applications Power supplies, pump control /ù \ @ d @ ) Technical data of approved types on request

siemens 230 96 O

Abstract: R60 VRM siemens 110 vdc coil sj 2258
Contextual Info: Power Relay RM 2/3/7 2 / 3 pole 10 / 16 A, DC- or AC-coil • • • • • • 2 C/O or 3 C/O contacts Switching capacity up to 6000 VA DC- or AC-coil Mechanical indicator Push-to-test-button Plug-in version, PCB terminals, chassis- or DIN-rail m ount Applications

Contextual Info: 32E D • Ô 23b320 O O lb b Q i T H S I P Silicon Switching Diode Array _S I E M E N S / SMBD 7000 SPCL-, SEM ICO N DS _ T ~ -2 3 - g ? • For high-speed sw itching applications • Connected in series C2 ,A 1 Tÿpe M a rk in g O rd e rin g c o d e fo r

Contextual Info: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!

1s211

Abstract: 2I k
Contextual Info: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

BF 182 transistor

Abstract: transistor 182 marking code M21
Contextual Info: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

sot143 Marking code RHs

Abstract: IC 1296
Contextual Info: SIEMENS BFP 183 NPN Silicon RF T ransistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1382 1=C m BFP 183 f\3 II ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFP 180 NPN S ilicon RF T ransistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2 .1 d B at 900MHz BFP 180 RDs Q62702-F1377 1 =C 2=E 3=B II m ESP: Electrostatic discharge sensitive device, observe handling precaution!

transistor B 1184

Contextual Info: SIEMENS BFP182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • * r = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

SIEMENS B25832-B4226-K9

Abstract: B25832-A4156 B25832-J4105-K1 B25832-A4685-K1 B25832-B4476-K9 B25832-A4335-K1 b25832-a4475-k1 din IEC 68 B25832A4225K1 B25832A4475K1
Contextual Info: MKV-Wechselspannungs-Kondensatoren B 25 832 Allgemeine Anwendung, Kommutierung Allgemeine Anwendung, Kommutierung Kompakte Bauform Langzeitstabil und zuverlässig Für Kommutierung im unteren Frequenzbereich Aufbau ● ● ● ● ● ● ● ● Selbstheilend

11744 502

Contextual Info: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz REs Q62702-F1378 1 =C 2=E 3=B Package

S14K320

Abstract: siemens RWF S14K420 varistor s20 k320 510k14 S20K320 S20K230 SIOV-S14K275 s14 k320 S14K460
Contextual Info: Disk Varistors, S Standard Construction • Round varistor element • Coating: epoxy resin, flame-retardant to UL 94 V-0 • Terminals: tinned copper wire New features • New high-energy varistors S14/S20 . E2 • PSpice models Approvals • • • •

BUZ14

Abstract: 681AE
Contextual Info: a&D D fl235b O S S IEM EN S 0Q 14474 & M S IE Ú A K TIE N G E S E L LS C H A F BUZ 14 Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-resistance Description Case Type 50 V 39 A 0 ,0 4 « l'os So ^DS on SIPMOS, N-channel, enhancement mode

Contextual Info: û235bOS 00Û13B3 1 % SIEMENS HITFET BTS 933 Smart Lowside Power Switch Product Summary Features • • • • • • • • • • • Logic Level Input Continious drain source Input protection ESD On-state resistance Thermal shutdown Current limitation

BTS149

Abstract: siemens relay AN3110
Contextual Info: SIEMENS HÌTFET BTS149 Smart Lowside Power Switch Features Product Summary • • • • • • • Continuous drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level input Input protection (ESD) Thermal shutdown

BTS 304

Abstract: siemens F sensor E3043 E3062A Smart 700 SIEMENS IC 933 BTS current sense siemens GP705
Contextual Info: ÔS35L0S 00Û13E3 SIEMENS HITFET BTS 933 Smart Lowside Power Switch Features • • • • • • • • • • • Product Summary Logic Level Input Continious drain source Input protection ESD On-state resistance Thermal shutdown Current limitation

Siemens ceramic Capacitors

Contextual Info: SMD Multilayer Ceramic Capacitors Chip capacitors Z5U Silver-nickel-tin terminations Tape packaging in acc. with IEC 286-3, up to size 1210 in 8-mm blister lape. sizes 1812 and 2220 in 12-mm blister tape Z5U (Y5U) 25 Vdc, 50 Vdc 30/085/56 + 227-56 % Ceramic material

UE43-2

Contextual Info: i+7E D • 6235b05 QG33ÖÖ7 7 «SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF Nonvolatile Memory 2-Kbit E2PROM with I 2C Bus and 1 K Write Protection SDA 3526-1 Preliminary Data MOS IC Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM