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    SIEMENS RF POWER TRANSISTORS Search Results

    SIEMENS RF POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LXMSJZNCMH-225
    Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF
    LXMS21NCMH-230
    Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag PDF
    LBAA0QB1SJ-295
    Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU PDF
    GRM-KIT-OVER100-DE-D
    Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit PDF
    LBUA5QJ2AB-828
    Murata Manufacturing Co Ltd QORVO UWB MODULE PDF

    SIEMENS RF POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFS480

    Contextual Info: SIEMENS BFS 480 NPN Silicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7GHz F = 1.5dB at 900MHz Cl • Two (galvanic) internal isolated Transistors in one package


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    900MHz OT-363 Q62702-F1531 BFS480 PDF

    Contextual Info: SIEMENS BFS 480 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • f j = 7GHz F = 1.5dB at 900MHz n • Two (galvanic) internal isolated


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    900MHz Q62702-F1531 OT-363 BFS480 fl235b D1E5173 PDF

    BFP450

    Abstract: BCR400 siemens power transistor siemens semiconductor small transistors Siemens rf power transistors BFP450 siemens
    Contextual Info: Application Note No. 003 Discrete & RF Semiconductors The Vceo-Mystery or How to Use Low-Vceo-Transistors With High Operating Voltages Mobile communications in particular has forced the operating voltages of handheld equipment to a very low level. In order to achieve high gain and high fT, the Vceo of modern


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    sab 1009

    Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    200mA BCR400R Q62702-C2479 OT-143R EHA07217 023SbD5 EHA07219 53SLDS sab 1009 PDF

    microwave transistor siemens bfp 420

    Abstract: RF Transistors smd transistor chart smd transistor NJ transistor R 405 doppler radar SMX-1 AG SMD TRANSISTOR Siemens transistors rf SIEMENS MICROWAVE RADIO 8 GHz
    Contextual Info: APPLICATIONS DISCRETE SEMICONDUCTORS Kurt Brenndörfer ● Gerhard Lohninger ● Lothar Musiol ● Jakob Huber Fourth-generation bipolar RF transistors with 25 GHz transit frequency: SIEGET heads the pack Since the very beginning of RF transistor development,


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    PDF

    Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    200mA Q62702-C2479 OT-143R BCR400 0235bOS ehao7219 fl235b05 PDF

    Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    200mA Q62702-C2481 BCR400W OT-343 Ufl235b05 BCR400 EHAD7217 3235b05 EHA07219 0235tiGS PDF

    MARKING CODE R7 RF TRANSISTOR

    Abstract: transistor B 764 NPN transistor marking W4s marking transistor RF
    Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    200mA Q62702-C2481 OT-343 BCR400 MARKING CODE R7 RF TRANSISTOR transistor B 764 NPN transistor marking W4s marking transistor RF PDF

    Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme, ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    200mA Q62702-C2481 OT-343 E35b05 012Gflb3 BCR400 flE35bQ5 012Dflb4 EHA07219 PDF

    FET marking FL

    Abstract: TRANSISTOR MARKING FA D 756 transistor BCR400 Q62702-C2479 transistor marking fl 3VS4 FLC103 Siemens transistors rf marking W4s
    Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from


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    200mA Q62702-C2479 OT-143R BCR400 023StOS EHA07219 fl235b05 FET marking FL TRANSISTOR MARKING FA D 756 transistor BCR400 transistor marking fl 3VS4 FLC103 Siemens transistors rf marking W4s PDF

    marking w4s

    Abstract: marking code transistor ND D 756 transistor MARKING HRA transistor wc
    Contextual Info: SIEMENS BCR 400R Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage a nd extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of N P N transistors a nd F E T s from


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    Q62702-C2479 OT-143R BCR400 EHA07217 marking w4s marking code transistor ND D 756 transistor MARKING HRA transistor wc PDF

    c2481

    Abstract: transistor MARKING CODE TX marking W4s TRANSISTOR 117a BCR400 BCR400W Q62702-C2481 103 ma siemens gaas fet npn marking tx
    Contextual Info: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V A pplication notes • Stabilizing bias current of NPN transistors and FETs from


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    200mA BCR400W Q62702-C2481 OT-343 BCR400 235b05 00aTfl05 EHA07219 c2481 transistor MARKING CODE TX marking W4s TRANSISTOR 117a BCR400 103 ma siemens gaas fet npn marking tx PDF

    SMD TRANSISTOR MARKING 76

    Abstract: smd transistor marking 54 transistor RF 98 smd RK 73 SMD smd marking codes list 722 smd transistor SMD TRANSISTOR MARKING 93 75 smd rf transistor marking SMD TRANSISTOR MARKING 86 smd transistor marking af
    Contextual Info: SIEMENS Inhaltsverzeichnis Table of Contents Selection Guide. 13 RF-Transistors and MMICs.


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    482 transistor

    Abstract: transistor f 482
    Contextual Info: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • ¿r= 8G H z F = 1.2dB at 900MHz • Two galvanic internal isolated XL Transistors in one package "p H ETE" a ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz Q62702-F1573 OT-363 482 transistor transistor f 482 PDF

    transistor marking RHs

    Contextual Info: SIEMENS BFS 483 NPN Silicon RF Transistor « For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA » f i = 8GHz F = 1.2dB at 900MHz •Two galvanic internal isolated Transistors in one package n Fi I R Li 111 □ ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz Q62702-F1574 OT-363 900MHz IS211 transistor marking RHs PDF

    Siemens A 1458

    Abstract: amplifier siemens sot-363
    Contextual Info: SIEMENS BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fy ~ 8 GHz F = 1.4 dE5 at 900 MHz • Two galvanic internal isolated Transistors in one package I 91T I ETl KC2 II m Q62702-F1572


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    Q62702-F1572 OT-363 IS21I2 900MHz Siemens A 1458 amplifier siemens sot-363 PDF

    BF450

    Abstract: BF451 BF 450 IY21 Q62702-F312 SIEMENS marking IC marking jw SiEMENS PM 350 92 bf 451 tag 451
    Contextual Info: SIEMENS BF 450 BF 451 PNP Silicon RF Transistors • For common emitter AM and FM stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 450 BF 451 - Q62702-F312 Q62702-F313 Pin Configuration 1 2 3 E C Package1 B TO-92 Maximum Ratings


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    Q62702-F312 Q62702-F313 0235bG5 235b05 00bb7fc 10MHz BF450 BF451 BF 450 IY21 SIEMENS marking IC marking jw SiEMENS PM 350 92 bf 451 tag 451 PDF

    BFW92

    Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
    Contextual Info: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,


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    6535bQ5 2N6621. Q62702-F321 Q68000-A4669 temperatu077 QQG4733 BFW92 BFW92 TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q68000-A4669 6621 transistor bfw 90 PDF

    Contextual Info: SIEMENS BFS 483 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • fT = 8GHz F = 1.2dB at 900MHz • Two galvanic internal isolated Transistors in one package El Fl F SI ¥ Ef FI ¥ C2 ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz Q62702-F1574 OT-363 PDF

    TRANSISTOR BFW 16

    Abstract: BFW92 2N6621 Q62702-F321 Q68000-A4669 QQG4733 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90
    Contextual Info: BSC D • Û235b05 0004731 7 « S I E G i l ' t r BFW 92 2 N 6621 NPN Silicon RF Broadband Transistors 'l c r rw -r * SIEMENS AKTIENÛESELLSCHAF B F W 9 2 is an epitaxial N PN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 D IN 41867 ; intended for use as RF amplifier up to the G H z range,


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    6535bQ5 2N6621. Q62702-F321 Q68000-A4669 QQG4733 BFW92 TRANSISTOR BFW 16 2N6621 siemens 800 169 O TRANSISTOR BFW 11 BFw 92 transistor bfw 90 PDF

    microwave transistor siemens bfp 420

    Abstract: 4144 lH21l BFP450 siemens MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT doppler radar SMX-1 BFP450 transistor s parameters noise sot-343 as
    Contextual Info: APPLICATIONS DISCRETE SEMICONDUCTORS Jakob Huber ● Gerhard Lohninger RF measurements on SIEGET bipolar transistors: Predicting performance straight from the wafer Multistage measurements are intended to ensure unrestricted operation of RF transistors. But until recently,


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    P32-A

    Abstract: BUZ 140 L C67078-S1331-A2
    Contextual Info: SIEM ENS SIPMOS Power Transistors • • • BUZ 12 BUZ 12 A N channel Enhancement mode Avalanche-rated / Type Id To •^DS (on) Package 1> Ordering Code 0.028 TO-220 AB C67078-S1331-A2 TO-220 AB C67078-S1331 -A3 Symbol Values BUZ 12 50 V 42 A 65 °C


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    O-220 C67078-S1331-A2 C67078-S1331 SIL02907 SIL02905 12/BUZ SIL02908 SIL02909 P32-A BUZ 140 L PDF

    BFT99

    Abstract: BFT99A Siemens transistors rf BFT 50 TH marking 99
    Contextual Info: SIEMENS BFT 99 BFT99A NPN Silicon RF Transistors • For low-distortion broadband amplifier output stages up to 1 GHz at collector currents up to 250 mA. • With integrated emitter stabilizing resistors. Type Marking Ordering Code BFT 99 BFT 99 Q62702-F524


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    BFT99 BFT99A Q62702-F524 O-117 BFT99A Q62702-F901 Siemens transistors rf BFT 50 TH marking 99 PDF

    Contextual Info: SIEMENS BF 240 BF 241 NPN Silicon RF Transistors • For AM and FM stages • Low feedback capacitance due to shield diffusion • Low output conductance Type Marking Ordering Code BF 240 BF 241 - Q62702-F302 Q62702-F1241 Pin Configuration 2 1 3 E C Package1


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    Q62702-F302 Q62702-F1241 235b05 DGbb751 PDF