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    SIEMENS IGBT INVERTERS Search Results

    SIEMENS IGBT INVERTERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1D120603MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN PDF
    MGN1D050603MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 5-6/-3V GAN PDF
    MGN1S0512MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN PDF
    MGN1S1212MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN PDF
    MGN1S1208MC-R7
    Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN PDF

    SIEMENS IGBT INVERTERS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IL485 SIEMENS OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACrMS APPLICATIONS • Motor Drive Controls • IGBT-p red rivers • AC/DC Power Inverters


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    IL485 IL485 PDF

    bi-directional switches IGBT

    Abstract: siemens igbt eupec matrix EconoMAC econoMac IGBT IGBT based voltage source converter "bi-directional switches" IGBT siemens rectifier pwm igbt matrix converter siemens igbt inverters bidirectional switch
    Contextual Info: EconoMAC the first all-in-one IGBT module for matrix converters Eupec: Hr. M. Hornkamp; Hr. M. Loddenkötter; Hr. M. Münzer; Siemens A&D: Hr. O. Simon ; Hr. M. Bruckmann Abstract: Searching for new alternatives to the state of the art technology of voltage


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    CH2721-9/89/0000-0360 bi-directional switches IGBT siemens igbt eupec matrix EconoMAC econoMac IGBT IGBT based voltage source converter "bi-directional switches" IGBT siemens rectifier pwm igbt matrix converter siemens igbt inverters bidirectional switch PDF

    siemens G110

    Abstract: 6SL3255-0AA00-2AA0 6SL3211-0AB17-5UA0 siemens simatic G110 6SL3211-0AB23-0UA0 sinamics-g110 6SL3211-0AB17-5BA0 SINAMICS G110 6SL3211-0AB13-7UA0 6SL3211-0AB21-1UA0
    Contextual Info: Product Brief • April 2003 sinamics SINAMICS G110 Inverters 0.12 kW to 3 kW SINAMICS G110 Description SINAMICS G110, frame sizes A, B, C Overview SINAMICS G110 is a frequency inverter with basic functions for a variety of industrial variable-speed drive applications.


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    D-91050 6ZB5471-0AC02-0BA0 sinamics-g110 siemens G110 6SL3255-0AA00-2AA0 6SL3211-0AB17-5UA0 siemens simatic G110 6SL3211-0AB23-0UA0 sinamics-g110 6SL3211-0AB17-5BA0 SINAMICS G110 6SL3211-0AB13-7UA0 6SL3211-0AB21-1UA0 PDF

    Contextual Info: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads


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    vub 70 -16

    Abstract: vub 70 ixys vub 70 -16 160-16NO1 ixys vub 70 160-12NO1 S-8912
    Contextual Info: VUB 120 / 160 VRRM = 1200/1600 V IdAVM = 121/157 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data VRRM Type VRRM V Type V 1200 VUB 120-12 NO1 1600 VUB 120-16 NO1 1200 VUB 160-12 NO1 1600 VUB 160-16 NO1 IFSM


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    VUB160 vub 70 -16 vub 70 ixys vub 70 -16 160-16NO1 ixys vub 70 160-12NO1 S-8912 PDF

    9V bridge rectifier ic

    Abstract: 60-16NO1 ixys vub 70 -16
    Contextual Info: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads


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    Contextual Info: VUB 120 / 160 VRRM = 1200/1600 V IdAVM = 121/157 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data VRRM Type VRRM V Type V 1200 VUB 120-12 NO1 1600 VUB 120-16 NO1 1200 VUB 160-12 NO1 1600 VUB 160-16 NO1 IFSM


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    VUB160 150ry PDF

    SKH122

    Abstract: SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v
    Contextual Info: INDEX Order Code Description Manufacturer 688-113 688-125 688-405 688-137 688-149 688-101 743-471 548-613 548-625 — — — — — — 795-987 670-820 — — — — — 663-335 663-293 795-331 687-625 794-788 794-776 796-413 795-422 795-410 795-483 796-300


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    SAB-C505C-LM: SAB-C515C-LM: SAB-C167CR-LM: 16-bit SAE81C90-N: SAE81C91-N: SAB-C504-LM: BTS149: BSP350: BSP452: SKH122 SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v PDF

    SFH551V

    Abstract: IGD515EI SFH551V equivalent series-connected IGBTs IGD515E SFH551 siemens sfh551v application MTBF SIEMENS traction HFBR2521 15-V
    Contextual Info: IGD508E/IGD515E Data Sheet & Application Manual Intelligent Gate Drivers for IGBTs and Power MOSFETs Description The intelligent gate drivers of the IGD type series are single-channel drive components designed for IGBTs and power MOSFETs. They were developed specifically for the


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    IGD508E/IGD515E IGD508EI/EN IGD515EI/EN SFH551V IGD515EI SFH551V equivalent series-connected IGBTs IGD515E SFH551 siemens sfh551v application MTBF SIEMENS traction HFBR2521 15-V PDF

    sla6805m

    Abstract: sma6823m washing machine electric circuit siemens bosch sma6822m bosch mp capacitor LG refrigerator whirlpool washing machine circuit lg washing machine control circuit bosch washing machine motor GE Refrigerator Compressor
    Contextual Info: Sanken High-Quality, High-Performance Power ICs From Allegro MicroSystems, Inc. Sanken Inverter Power Module Series 2007 September 29, 2007 Introduction of High Voltage IPM for Motor Drive Application ƒ For Small Capacity Use Up to 200W SMA, SLA (“A” and “B” in photo)


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    IXGN320N60A3

    Contextual Info: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A IXGN320N60A3 PDF

    Contextual Info: VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A PDF

    Contextual Info: VCES = 600V IC25 = 320A VCE sat ≤ 1.25V IXGN320N60A3 GenX3TM 600V IGBT Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A PDF

    IXGN400N30A3

    Abstract: Aluminium nitride
    Contextual Info: IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching VCES = 300V IC25 = 400A VCE sat ≤ 1.15V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A IXGN400N30A3 Aluminium nitride PDF

    Contextual Info: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A PDF

    IGCT

    Abstract: IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT
    Contextual Info: Application Specific IGCTs Eric Carroll, Bjoern Oedegard, Thomas Stiasny, Marco Rossinelli ICPE, October 2001, Seoul, Korea Copyright [2001] IEEE. Reprinted from the International Conference on Power Electronics. This material is posted here with permission of the IEEE. Such permission of the


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    ICPE01 IGCT IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT PDF

    Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH48N60B3C1 = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


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    IC110 IXGH48N60B3C1 116ns O-247 IF110 48N60B3C1 PDF

    Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode IXYT20N120C3D1HV High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 17A 3.4V 108ns TO-268HV Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M


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    IXYT20N120C3D1HV IC110 108ns O-268HV IF110 PDF

    Contextual Info: □ IXYS VUB71 Three Phase Rectifier Bridge VRRM = 1200-1600 V with IGBT and Fast Recovery Diode for Braking System 'dAVM V RRM = 7 0 A Type V 1200 1600 VUB 71-12 NOI VUB 71-16 NOI Symbol Test Conditions Maximum Ratings V RRM ^dAV ^dAVM Cfl o UsM b T h = 110°C, sinusoidal 120°


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    VUB71 PDF

    20N120C3

    Contextual Info: IXYJ20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM


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    IXYJ20N120C3D1 IC110 IF110 O-247TM E153432 20N120C3 PDF

    Contextual Info: Advance Technical Information IXYJ30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES = IC110 = VCE sat  tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M


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    IXYJ30N120C3D1 IC110 O-247TM E153432 IF110 PDF

    Contextual Info: IXYH30N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M


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    IXYH30N120C3D1 IC110 O-247 IF110 PDF

    IXGN400N60B3

    Contextual Info: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


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    IXGN400N60B3 OT-227B, E153432 IC110 400N60B3 IXGN400N60B3 PDF

    Contextual Info: Advance Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 30A 2.7V 37ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


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    IXYH30N65C3 IC110 20-60kHz O-247 30N65C3 PDF