SIEMENS IGBT INVERTERS Search Results
SIEMENS IGBT INVERTERS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
SIEMENS IGBT INVERTERS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: IL485 SIEMENS OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACrMS APPLICATIONS • Motor Drive Controls • IGBT-p red rivers • AC/DC Power Inverters |
OCR Scan |
IL485 IL485 | |
bi-directional switches IGBT
Abstract: siemens igbt eupec matrix EconoMAC econoMac IGBT IGBT based voltage source converter "bi-directional switches" IGBT siemens rectifier pwm igbt matrix converter siemens igbt inverters bidirectional switch
|
Original |
CH2721-9/89/0000-0360 bi-directional switches IGBT siemens igbt eupec matrix EconoMAC econoMac IGBT IGBT based voltage source converter "bi-directional switches" IGBT siemens rectifier pwm igbt matrix converter siemens igbt inverters bidirectional switch | |
siemens G110
Abstract: 6SL3255-0AA00-2AA0 6SL3211-0AB17-5UA0 siemens simatic G110 6SL3211-0AB23-0UA0 sinamics-g110 6SL3211-0AB17-5BA0 SINAMICS G110 6SL3211-0AB13-7UA0 6SL3211-0AB21-1UA0
|
Original |
D-91050 6ZB5471-0AC02-0BA0 sinamics-g110 siemens G110 6SL3255-0AA00-2AA0 6SL3211-0AB17-5UA0 siemens simatic G110 6SL3211-0AB23-0UA0 sinamics-g110 6SL3211-0AB17-5BA0 SINAMICS G110 6SL3211-0AB13-7UA0 6SL3211-0AB21-1UA0 | |
Contextual Info: VUB 60 VRRM = 1200-1600 V IdAVM = 70 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 1 2 Type 4 5 V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 6 7 Test Conditions VRRM IdAV IdAVM TH = 110°C, sinusoidal 120° limited by leads |
Original |
||
vub 70 -16
Abstract: vub 70 ixys vub 70 -16 160-16NO1 ixys vub 70 160-12NO1 S-8912
|
Original |
VUB160 vub 70 -16 vub 70 ixys vub 70 -16 160-16NO1 ixys vub 70 160-12NO1 S-8912 | |
9V bridge rectifier ic
Abstract: 60-16NO1 ixys vub 70 -16
|
Original |
||
Contextual Info: VUB 120 / 160 VRRM = 1200/1600 V IdAVM = 121/157 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System Preliminary Data VRRM Type VRRM V Type V 1200 VUB 120-12 NO1 1600 VUB 120-16 NO1 1200 VUB 160-12 NO1 1600 VUB 160-16 NO1 IFSM |
Original |
VUB160 150ry | |
SKH122
Abstract: SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v
|
Original |
SAB-C505C-LM: SAB-C515C-LM: SAB-C167CR-LM: 16-bit SAE81C90-N: SAE81C91-N: SAB-C504-LM: BTS149: BSP350: BSP452: SKH122 SKH-122 UPS schematic diagram using PIC microcontroller IRG4B30 0.75KW siemens motor electric fm transmitter 2KM documentation avr FOR ALTERNATOR circuit diagram Bluebird Millennium board 2.2KW siemens gear motor sine wave inverter schematic diagram PCB ups 12v | |
SFH551V
Abstract: IGD515EI SFH551V equivalent series-connected IGBTs IGD515E SFH551 siemens sfh551v application MTBF SIEMENS traction HFBR2521 15-V
|
Original |
IGD508E/IGD515E IGD508EI/EN IGD515EI/EN SFH551V IGD515EI SFH551V equivalent series-connected IGBTs IGD515E SFH551 siemens sfh551v application MTBF SIEMENS traction HFBR2521 15-V | |
sla6805m
Abstract: sma6823m washing machine electric circuit siemens bosch sma6822m bosch mp capacitor LG refrigerator whirlpool washing machine circuit lg washing machine control circuit bosch washing machine motor GE Refrigerator Compressor
|
Original |
||
IXGN320N60A3Contextual Info: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
Original |
IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A IXGN320N60A3 | |
Contextual Info: VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
Original |
IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A | |
Contextual Info: VCES = 600V IC25 = 320A VCE sat ≤ 1.25V IXGN320N60A3 GenX3TM 600V IGBT Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
Original |
IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A | |
IXGN400N30A3
Abstract: Aluminium nitride
|
Original |
IXGN400N30A3 10kHz OT-227B, E153432 IC110 400N30A3 1-18-08-A IXGN400N30A3 Aluminium nitride | |
|
|||
Contextual Info: IXGN320N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 320A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
Original |
IXGN320N60A3 OT-227B, E153432 IC110 320N60A3 3-08-A | |
IGCT
Abstract: IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT
|
Original |
ICPE01 IGCT IGCT thyristor ABB snubber IGCT IGCT 4.5kv IGCT thyristor IGCT thyristor ABB new ABB IGBT inverter PCIM 96 ABB thyristor modules symmetric IGCT | |
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH48N60B3C1 = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C |
Original |
IC110 IXGH48N60B3C1 116ns O-247 IF110 48N60B3C1 | |
Contextual Info: 1200V XPTTM IGBT GenX3TM w/ Diode IXYT20N120C3D1HV High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat tfi(typ) = 1200V 17A 3.4V 108ns TO-268HV Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M |
Original |
IXYT20N120C3D1HV IC110 108ns O-268HV IF110 | |
Contextual Info: □ IXYS VUB71 Three Phase Rectifier Bridge VRRM = 1200-1600 V with IGBT and Fast Recovery Diode for Braking System 'dAVM V RRM = 7 0 A Type V 1200 1600 VUB 71-12 NOI VUB 71-16 NOI Symbol Test Conditions Maximum Ratings V RRM ^dAV ^dAVM Cfl o UsM b T h = 110°C, sinusoidal 120° |
OCR Scan |
VUB71 | |
20N120C3Contextual Info: IXYJ20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM |
Original |
IXYJ20N120C3D1 IC110 IF110 O-247TM E153432 20N120C3 | |
Contextual Info: Advance Technical Information IXYJ30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES = IC110 = VCE sat tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M |
Original |
IXYJ30N120C3D1 IC110 O-247TM E153432 IF110 | |
Contextual Info: IXYH30N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M |
Original |
IXYH30N120C3D1 IC110 O-247 IF110 | |
IXGN400N60B3Contextual Info: Preliminary Technical Information IXGN400N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 430A VCE sat ≤ 1.40V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 |
Original |
IXGN400N60B3 OT-227B, E153432 IC110 400N60B3 IXGN400N60B3 | |
Contextual Info: Advance Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 30A 2.7V 37ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
Original |
IXYH30N65C3 IC110 20-60kHz O-247 30N65C3 |