SIEMENS ESP 100 Search Results

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

BF 182 transistor

Abstract: transistor 182 marking code M21
Contextual Info: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Transistor BFR 181w

Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

transistor Bf 966

Contextual Info: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration 1= B Q62702-F1519 2=E II CO RBs o BF 771W

K 193 transistor

Abstract: ZG 1056
Contextual Info: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900M Hz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFG193 1= E Q62702-F1291

BFR183W

Contextual Info: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: SIEMENS BFR 280W NPN S ilicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • *r = 7.5GHz F= 1.5dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

transistor marking R2s

Abstract: AMI siemens BFR93AW k150t
Contextual Info: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA 1=B Q62702-F1489 h R2s m BFR 93AW ro ESP: Electrostatic discharge sensitive device, observe handling precaution!

1s211

Abstract: 2I k
Contextual Info: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

marking 93A

Abstract: transistor marking code 1325 b 11061
Contextual Info: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!

Q62702-F938

Abstract: IS21E K2112
Contextual Info: SIEMENS BFR 35AP NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA Q62702-F938 1=B O GEs LU II CM BFR 35AP CO II ESP: Electrostatic discharge sensitive device, observe handling precaution!

sot marking code ZS

Abstract: transistor bf 290
Contextual Info: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Q62702-F1359

Abstract: 12L marking transistor 7g mmic+SMD+amplifier+marking+code+19s
Contextual Info: SIEMENS BFG 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

482 transistor

Abstract: transistor f 482
Contextual Info: SIEMENS BFS 482 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. • ¿r= 8G H z F = 1.2dB at 900MHz • Two galvanic internal isolated XL Transistors in one package "p H ETE" a ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFP 180 NPN S ilicon RF T ransistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2 .1 d B at 900MHz BFP 180 RDs Q62702-F1377 1 =C 2=E 3=B II m ESP: Electrostatic discharge sensitive device, observe handling precaution!

marking code AC sot 23-5

Abstract: marking BFG
Contextual Info: SIEMENS BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor

BFS480

Contextual Info: SIEMENS BFS 480 NPN Silicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • = 7GHz F = 1.5dB at 900MHz Cl • Two (galvanic) internal isolated Transistors in one package

Siemens A 1458

Abstract: amplifier siemens sot-363
Contextual Info: SIEMENS BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fy ~ 8 GHz F = 1.4 dE5 at 900 MHz • Two galvanic internal isolated Transistors in one package I 91T I ETl KC2 II m Q62702-F1572

Contextual Info: û235bOS 00Û13B3 1 % SIEMENS HITFET BTS 933 Smart Lowside Power Switch Product Summary Features • • • • • • • • • • • Logic Level Input Continious drain source Input protection ESD On-state resistance Thermal shutdown Current limitation

BTS141

Abstract: siemens relay GPT05164 Q67060-S6502-A2 Q67060-S6502-A3 H24b4
Contextual Info: SIEMENS HITFET BTS141 Smart Lowside Power Switch Features Product Summary • • • • • • • Continuous drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input Input protection (ESD) Thermal shutdown

Contextual Info: 6 2 3 5 b O S 0 0 6 1 3 1 4 =163 S IE M E N S HITFET BTS 917 Smart Lowside Power Switch Product Summary Features • • • • • • • • • • • Logic Level Input Continious drain source voltage Input protection ESD On-state resistance Thermal shutdown

BTS 304

Abstract: siemens F sensor E3043 E3062A Smart 700 SIEMENS IC 933 BTS current sense siemens GP705
Contextual Info: ÔS35L0S 00Û13E3 SIEMENS HITFET BTS 933 Smart Lowside Power Switch Features • • • • • • • • • • • Product Summary Logic Level Input Continious drain source Input protection ESD On-state resistance Thermal shutdown Current limitation