SIEGET 45 Search Results

BFP520

Abstract: 702 Z TRANSISTOR SIEMENS BFP520
Contextual Info: Application Note No. 051 Discrete & RF Semiconductors R. Sedlmaier, HL HF AT SIEGET45 - Low Noise Amplifier with BFP520 Transistor at 1.9 GHz This application note describes an example of a Low Noise Amplifier with the BFP520 5th Generation, SOT343 SIEGET 45-Line. Improved performance in Gain

Contextual Info: SIEGET
45 BFP540F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1
Gold metallization for high reliability
SIEGET
45 - Line TSFP-4 to p v ie w !

Contextual Info: SIEGET
45 BFP 540F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gms = 21 dB Noise Figure F = 0.9 dB 2 4 1
Gold metallization for high reliability
SIEGET
45 - Line TSFP-4 to p v ie w !

Contextual Info: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability 2 • SIEGET  45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP-540

Abstract: VPS05605 transistor BO 540 Transistor MJE 540
Contextual Info: SIEGET
45 BFP 540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VPS05605

Contextual Info: SIEGET
45 BFP 540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEGET@45 BFP 540 Infineon technologies NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking BFP

Contextual Info: SIEGET
45 BFP 540ECSP NPN Silicon RF Transistor Preliminary data
For highest gain low noise amplifier XY at 1.8 GHz 4 Outstanding Gms = 21 dB 3 Noise Figure F = 0.9 dB 1
Gold metallization for high reliability
SIEGET
45 GHz fT- Line 2 •=Chip Scale Package

BFP540

Abstract: INFINEON application note
Contextual Info: SIEGET
45 BFP540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP540F

Contextual Info: SIEGET
45 BFP540F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gma = 20 dB 2 4 Noise Figure F = 0.9 dB 1
Gold metallization for high reliability
SIEGET
45 - Line TSFP-4 to p v ie w !

amplifier siemens sot-363

Abstract: BFS480 HF-transistoren SOT-363 fg 420 sot-363 SOT343
Contextual Info: Transistoren Transistors SIEGET -HF-BIPOLAR-Transistoren SIEGET^-RF-BIPOLAR-Transistors Type N = NPN P = PNP Maximum Ratings Characteristics r A = 25 °C Package G Fcèo V 1F min k mA -f*tot h mW GHz dB k mA Vce f V MHz dB G ms k mA Vce / V MHz Lead Code

microwave transistor siemens bfp 420

Abstract: 4144 lH21l BFP450 siemens MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT doppler radar SMX-1 BFP450 transistor s parameters noise sot-343 as
Contextual Info: APPLICATIONS DISCRETE SEMICONDUCTORS Jakob Huber ● Gerhard Lohninger RF measurements on SIEGET bipolar transistors: Predicting performance straight from the wafer Multistage measurements are intended to ensure unrestricted operation of RF transistors. But until recently,

bfp540

Abstract: INFINEON ATS BGA420
Contextual Info: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)

marking AUs

Abstract: BFP420F BFP540FESD amplifier marking code a
Contextual Info: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)

microwave transistor siemens bfp 420

Abstract: RF Transistors smd transistor chart smd transistor NJ transistor R 405 doppler radar SMX-1 AG SMD TRANSISTOR Siemens transistors rf SIEMENS MICROWAVE RADIO 8 GHz
Contextual Info: APPLICATIONS DISCRETE SEMICONDUCTORS Kurt Brenndörfer ● Gerhard Lohninger ● Lothar Musiol ● Jakob Huber Fourth-generation bipolar RF transistors with 25 GHz transit frequency: SIEGET heads the pack Since the very beginning of RF transistor development,

SOT-636-package

Abstract: sot636
Contextual Info: Application Note No. 063 Silicon Discretes A 1.85 GHz High Gain Low Noise Transistor Amplifier using BGA428 Features • Two-stage Low Noise Amplifier • SIEGET 45-Technology with 45 GHz f T • Small outline SOT363-Package • Low Noise Figure: 1.5 dB at 1.85 GHz

RF NPN POWER TRANSISTOR C 10-12 GHZ

Abstract: BFP540ESD BGA420
Contextual Info: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier • Excellent ESD performance 3 2 4 typical value 1000 V HBM 1 • Outstanding G ms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line

Contextual Info: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line

transistor b 1238

Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Contextual Info: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1

INFINEON ATS

Abstract: BFP540 BGA420
Contextual Info: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)

Contextual Info: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding Gms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line • Pb-free RoHS compliant package 1)

BFP540

Contextual Info: BFP540 NPN Silicon RF Transistor 3 4 • For highest gain low noise amplifier at 1.8 GHz • Outstanding G ms = 21 dB Noise Figure F = 0.9 dB 2 • Gold metallization for high reliability • SIEGET 1 VPS05605 45 - Line ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP540

Abstract: INFINEON ATS BGA420 Transistor BFP540
Contextual Info: BFP540 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 • Outstanding G ms = 21.5 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line ESD Electrostatic discharge sensitive device, observe handling precaution!

BFP540ESD

Abstract: BGA420
Contextual Info: BFP540ESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 typical value 1000 V HBM 1 • Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line