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SIE844DF Datasheets (2)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIE844DF-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 44.5A POLARPAK	Original	PDF		10
SIE844DF-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 44.5A POLARPAK	Original	PDF		10

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Vishay Intertechnologies


Vishay Intertechnologies SIE844DF-T1-GE3 MOSFET N-CH 30V 44.5A 10POLARPAK
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SIE844DF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SiE844DF-T1-E3 Abstract: SiE844DF-T1-GE3 SiE844DF Contextual Info: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET	Original	SiE844DF 2002/95/EC 11-Mar-11 SiE844DF-T1-E3 SiE844DF-T1-GE3	PDF
m 9835 Abstract: AN609 Contextual Info: SiE844DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	SiE844DF AN609, 22-Apr-08 m 9835 AN609	PDF
SiE844DF-T1-E3 Abstract: SiE844DF-T1-GE3 Sie-844 Contextual Info: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET	Original	SiE844DF 2002/95/EC 18-Jul-08 SiE844DF-T1-E3 SiE844DF-T1-GE3 Sie-844	PDF
Contextual Info: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET	Original	SiE844DF 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for	Original	SiE844DF 10ded 08-Apr-05	PDF
Contextual Info: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET	Original	SiE844DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET	Original	SiE844DF 2002/95/EC 11-Mar-11	PDF
Contextual Info: SPICE Device Model SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SiE844DF 18-Jul-08	PDF
SiE844DF-T1-E3 Contextual Info: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • TrenchFET Gen II Power MOSFET • Ultra Low Thermal Resistance Using RoHS Top-Exposed PolarPAK® Package for	Original	SiE844DF 18-Jul-08 SiE844DF-T1-E3	PDF
Contextual Info: New Product SiE844DF Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.007 at VGS = 10 V 44.5 0.010 at VGS = 4.5 V 37.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen II Power MOSFET	Original	SiE844DF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
Power MOSFET Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET Contextual Info: POL Power Table of Contents BOOTSTRAP, Diodes. 3 CONTROLLERS, Current Sense Resistors. 4	Original	Si4642DY SiE726DF 1-1500uF 47-680uF Power MOSFET mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
R312 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Dual Heat Dissipation Paths Increase Current Density AND TEC I INNOVAT O L OGY PolarPAK N HN POWER MOSFETs O 19 62-2012 PolarPAK® Brings Standard Packaging to Double-Sided Cooling FEATURES • Leadframe and plastic encapsulation construction	Original	VMN-PT0052-1209 R312	PDF