SIC MOSFET Search Results

SiC POWER MOSFET

Abstract: sic MOSFET APTMC60TLM14CAG
Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 98mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

800V 40A mosfet

Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: Power Modules New Line of SiC-Based Power Modules for Universal Use in Solar and Battery Management Applications Second generation of SiC modules debuts flow 0 SiC Vincotech has rolled out new SiC-based products for ultra efficient, high-frequency operation in solar inverter and battery management

10PZ12B

Contextual Info: 10-PZ12B2A040MR01-M330L68Y target datasheet flowBOOST 0 SiC 1200V/ 40mΩ Features flowBOOST 0 SiC TM ● Rohm SiC-Power MOSFET´s and Schottky Diodes ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors ● Extremely Fast Switching with No "Tail" Current

sic mosfet isolated gate driver

Abstract: TBD0805 CPWR-AN10
Contextual Info: SiC MOSFET Isolated Gate Driver SiC MOSFET Isolated Gate Driver This article describes an implementation of an isolated gate driver suitable for testing and evaluating SiC MOSFETs in a variety of applications. This design replaces previous versions of this application note and include new enhancements. The enhancements are as follows:

SCS205KG

Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Contextual Info: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.

APT9402

Contextual Info: TECHNOLOGY Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors SiC are being explored for power electronic conversion applications The SiC based 1200 V/220 mÙ Super Junction Transistors SJTs feature high temperature (> 300 °C) operation capability, faster switching transitions (< 20 ns), extremely

Contextual Info: Advantages of SiC Schottky Diodes in Fast Switching Power Electronics Solutions Michael Frisch, Vincotech GmbH, Unterhaching/Germany SiC is discussed as a future high performance replacement of the silicon power components. The new technology enables products with almost ideal behaviour. Currently, SiC Schottky rectifiers are already

SML25SCM650N2B

Contextual Info: SiC 650V N-CHANNEL MOSFET SML25SCM650N2B • 650V SiC MOSFET In A Hermetic SMD1 TO-276AB Package • Designed for High Temperature Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID IDM PD

Contextual Info: 10-PZ123BA080ME-M909L18Y flow 3xBOOST0-SiC 1200V/80mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 channel boost topology ● Ultra Low Inductance with integrated DC-capacitors ● Switching frequency >100kHz ●Temperature sensor

Contextual Info: APTC80AM75SCG Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module OUT Features • - S1 Q2 G2 S2 0/VBUS  Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF

Contextual Info: 10-PZ123BA080MR-M909L28Y flow 3xBOOST0-SiC 1200V/80mΩ Features flow 0 12mm housing ● SiC-Power MOSFET´s and Schottky Diodes ● 3 channel boost topology ● Ultra Low Inductance with integrated DC-capacitors ● Switching frequency >100kHz ●Temperature sensor

Contextual Info: APTMC120AM09CT3AG VDSS = 1200V RDSon = 9mΩ max @ Tj = 25°C ID = 295A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

100A 1000V mosfet

Contextual Info: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

Contextual Info: APTMC120AM12CT3AG VDSS = 1200V RDSon = 12mΩ max @ Tj = 25°C ID = 220A* @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

Contextual Info: APTMC170AM60CT1AG VDSS = 1700V RDSon = 60mΩ max @ Tj = 25°C ID = 53A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

Contextual Info: APTMC120AM25CT3AG VDSS = 1200V RDSon = 25mΩ max @ Tj = 25°C ID = 105A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET