SIC 40 Search Results

SiC POWER MOSFET

Abstract: sic MOSFET APTMC60TLM14CAG
Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

Contextual Info: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 13mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode

0116 solar

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH04G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH04G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

IDV03S60C

Abstract: Infineon power diffusion process Schottky diode TO220 JESD22
Contextual Info: SiC Silicon Carbide Diode 2nd Generation thinQ! 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Data Sheet Rev. 2.1, 2010-02-16 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV03S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the

D0865C5

Contextual Info: SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH08G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ! SiC Schottky Diode 1 IDH08G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC

JEC 0.1 S

Abstract: JEC ELECTRONICS uv light PHOTO detector JEC 400 JEC 0.1 SO uv PHOTO detector UV photodiodes UV diode 280 nm solar photodiodes UV flame detection
Contextual Info: JEC Series SiC Ultraviolet Photodiodes SiC Ultraviolet Photodiodes Boston Electronics’s Silicon Carbide SiC photodetectors are photovoltaic devices similar to silicon solar cells, and need no external power supply (bias) to operate. Only light shorter than a wavelength of ~400 nm is absorbed and produces photocurrent.

5BWC

Contextual Info: Chip Assy Part No. Material SLMXXX5BWC SLMXXX5BWD SLMXXX5BWT SLMXXX5PGC SLMXXX5PGD SLMXXX5PGT SLMXXX5GC SLMXXX5GD SLMXXX5GT SLMXXX5YC SLMXXX5YD SLMXXX5YT SLMXXX5HC SLMXXX5HD SLMXXX5HT SLMXXX5RC SLMXXX5RD SLMXXX5RT GaN/SiC GaN/SiC GaN/SiC GaP/GaP GaP/GaP GaP/GaP

Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 49mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC60TL11CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 110mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

800V 40A mosfet

Abstract: mosfet 1200V 40A MOSFET 40A 600V APTMC60TLM55CT3AG
Contextual Info: APTMC60TLM55CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 55mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 20mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

Contextual Info: APTMC60TLM20CT3AG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 17mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • • •

SIC01S-18ISO90

Abstract: SiC Photodiodes
Contextual Info: SIC01S-18ISO90 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC

sic mosfet isolated gate driver

Abstract: TBD0805 CPWR-AN10
Contextual Info: SiC MOSFET Isolated Gate Driver SiC MOSFET Isolated Gate Driver This article describes an implementation of an isolated gate driver suitable for testing and evaluating SiC MOSFETs in a variety of applications. This design replaces previous versions of this application note and include new enhancements. The enhancements are as follows:

TLMB3140

Abstract: TLMBG3100 TLMTG3100
Contextual Info: TLMB/TLMBG/TLMTG31. Preliminary Vishay Semiconductors High Intensity SMD LED Color Type Blue Blue Green True Green TLMB3140 TLMBG3100 TLMTG3100 Technology InGaN on SiC InGaN on SiC InGaN on SiC Angle of Half Intensity ±ö 60° 60° 60° Description This device has been designed to meet the increasing

515 TCI

Abstract: LED wavelength 440 smd TLMB3140 TLMBG3100 TLMTG3100 16-MAR-01
Contextual Info: TLMB/TLMBG/TLMTG31. Preliminary Vishay Telefunken High Intensity SMD LED Color Type Blue Blue Green True Green TLMB3140 TLMBG3100 TLMTG3100 Technology InGaN on SiC InGaN on SiC InGaN on SiC Angle of Half Intensity ±ö 60° 60° 60° Description This device has been designed to meet the increasing

Contextual Info: APT40DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 40A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery

Contextual Info: APT40DC120HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 1200V IC = 40A @ Tc = 100°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features     + ~ SiC Schottky Diode

Contextual Info: APT40DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 40A @ Tc = 100°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features     + ~ SiC Schottky Diode

SIC01S-C18

Contextual Info: SIC01S-C18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01L-18

Contextual Info: SIC01L-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01S-18

Contextual Info: SIC01S-18 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The

SIC01XL-5

Contextual Info: SIC01XL-5 v 6.0 Description SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. These features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detectors can be permanently operated at up to 170°C 338°F . The