| MG800FXF1ZMS3 |  | Toshiba Electronic Devices & Storage Corporation | N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD | Datasheet |  | 
| MG800FXF1JMS3 |  | Toshiba Electronic Devices & Storage Corporation | N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET | Datasheet |  | 
| TRS3E65H |  | Toshiba Electronic Devices & Storage Corporation | SiC Schottky Barrier Diode (SBD), 650 V, 3 A, TO-220-2L | Datasheet |  | 
| TRS12V65H |  | Toshiba Electronic Devices & Storage Corporation | SiC Schottky Barrier Diode (SBD), 650 V, 12 A, DFN8×8 | Datasheet |  | 
| TRS2E65H |  | Toshiba Electronic Devices & Storage Corporation | SiC Schottky Barrier Diode (SBD), 650 V, 2 A, TO-220-2L | Datasheet |  |