SI980 Search Results
SI980 Datasheets (18)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| Si9801DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si9801DY | Vishay Intertechnology | P-Channel, Reduced Q g , Fast Switching Half-Bridge | Original | 96.3KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9801DY | Vishay Telefunken | N-Channel and P-channel Reduced Qg Fast Switching Half-bridge | Original | 69.58KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9801DY-T1 | Vishay Intertechnology | P-Channel, Reduced Q g , Fast Switching Half-Bridge | Original | 96.3KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si9802DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si9802DY | Vishay Intertechnology | Dual N-Channel Reduced Qg,Fast Switching MOSFET | Original | 62.53KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9802DY | Vishay Telefunken | Dual N-Channel Reduced Qg Fast Switching MOSFET | Original | 41.86KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9802DY-T1 | Vishay Intertechnology | Dual N-Channel Reduced Qg,Fast Switching MOSFET | Original | 62.53KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si9803DY | Unknown | Metal oxide N-channel FET, Enhancement Type | Original | 48.86KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si9803DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si9803DY SPICE Device Model | Vishay | P-Channel 20-V (D-S) MOSFET | Original | 216.13KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9803DY-T1 | Vishay Intertechnology | P-Channel Reduced Q g , Fast Switching MOSFET | Original | 62.64KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si9804DY | Unknown | Metal oxide N-channel FET, Enhancement Type | Original | 47.56KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si9804DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9804DY-T1 | Vishay Intertechnology | N-Channel Reduced Q g , Fast Switching MOSFET | Original | 60.64KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si9806DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Si9806DY | Vishay Intertechnology | Dual Gate, N-Channel 25-V (D-S) MOSFET | Original | 67.35KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9806DY-T1 | Vishay Intertechnology | Dual Gate, N-Channel 25-V (D-S) MOSFET | Original | 67.35KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI980 Price and Stock
Vishay Intertechnologies SI9803DY-T1Trans MOSFET P-CH 25V 5.9A 8-Pin SOIC N T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI9803DY-T1 | 2,268 |
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Get Quote | |||||||
Vishay Siliconix SI9801DYTrans MOSFET N/P-CH 20V 4.5A/4A 8-Pin SOIC N |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI9801DY | 1,670 |
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Get Quote | |||||||
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SI9801DY | 100 |
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Buy Now | |||||||
Vishay Siliconix SI9803DYTrans MOSFET P-CH 25V 5.9A 8-Pin SOIC N |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI9803DY | 49 |
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Get Quote | |||||||
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SI9803DY | 44 |
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Buy Now | |||||||
| SI9803DY | 4 |
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Buy Now | ||||||||
Vishay Siliconix SI9801DDY |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI9801DDY | 28 |
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Get Quote | |||||||
Vishay Intertechnologies SI9804DYTrans MOSFET N-CH 25V 7.8A 8-Pin SOIC N |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI9804DY | 24 |
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Get Quote | |||||||
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SI9804DY | 4 |
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SI980 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Si9806DYContextual Info: Si9806DY Vishay Siliconix Dual Gate, N-Channel 25-V D-S MOSFET PRODUCT SUMMARY VDS (V) Gate 1 rDS(on) (W) ID (A) 0.027 @ VGS = 4.5 V "7.0 0.038 @ VGS = 3.0 V "6.0 0.400 @ VGS = 4.5 V "1.8 0.570 @ VGS = 3.0 V "1.5 25 Gate 2 D SO-8 S 1 8 D G2 2 7 D S 3 6 D |
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si9806dys-00652--rev27-mar-00 | |
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Contextual Info: Tem ic Si9804DY Semiconductors N-Channel Reduced Qg, Fast Switching MOSFET Product Summary V DS V 25 r DS(on) (Q ) I d (A) 0.023 @ VGs = 4.5 V ±7.8 0.030 @ V Gs = 3.0 V ±6.8 D O SO-8 s s |X X S X x i d ~6~| D G X X o c J j q i i D Top View <> ( N-Channel MOSFET |
OCR Scan |
si9804dys-54699ol-sep-97 | |
Si9803DYContextual Info: Si9803DY Vishay Siliconix P-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V –25 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "5.9 0.060 @ VGS = –3.0 V "4.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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si9803dys-49559--rev11-feb-98 | |
Si9802DYContextual Info: Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET |
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si9802dy18-jul-08 | |
Si9801DY
Abstract: SILICONIX Si9801DY
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si9801dys-51301--rev19-dec-96siliconix si9801dy | |
Si9803DY
Abstract: 1682V
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si9803dys-53240--rev25-aug-971682v | |
Si9804DYContextual Info: Si9804DY N-Channel Reduced Qg, Fast Switching MOSFET Product Summary VDS V 25 rDS(on) (W) ID (A) 0.023 @ VGS = 4.5 V "7.8 0.030 @ VGS = 3.0 V "6.8 D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si9804dys-54699--rev01-sep-97 | |
Si9803DYContextual Info: SPICE Device Model Si9803DY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si9803dy25-feb-99 | |
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Contextual Info: Si9804DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 25 rDS(on) (W) ID (A) 0.023 @ VGS = 4.5 V "7.8 0.030 @ VGS = 3.0 V "6.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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si9804dy08-apr-05 | |
2C10
Abstract: LTC1700EMS DC349A SI3443DV SI6466DQ SI9803DY SI9804DY DC349
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100pf220pfltc1700emssi9804dy+7 | |
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Contextual Info: Si9803DY Vishay Siliconix P-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V –25 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "5.9 0.060 @ VGS = –3.0 V "4.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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si9803dy08-apr-05 | |
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Contextual Info: Tem ic Si9803DY Semiconductors P-Channel Reduced Qg, Fast Switching MOSFET Product Summary VDS V -25 r DS(on) ( ^ ) I d (A) 0.040 @ VGs = -4.5 V ±5.9 0.060 @ VGs = -3.0 V ±4.8 SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted) |
OCR Scan |
si9803dys-53240ll-feb-98 | |
SI9801DY
Abstract: SILICONIX Si9801DY
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si9801dys-61825--rev16-aug-99siliconix si9801dy | |
Si9802DYContextual Info: Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET |
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si9802dys-51303--rev19-dec-96 | |
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Si9801DYContextual Info: Si9801DY Vishay Siliconix N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge PRODUCT SUMMARY VDS V N-Channel P-Channel 20 –20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 0.080 @ VGS = –4.5 V "4.0 0.120 @ VGS = –3.0 V "3.0 |
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si9801dy18-jul-08 | |
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Contextual Info: Si9801DY Vishay Siliconix N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge PRODUCT SUMMARY VDS V N-Channel P-Channel 20 –20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 0.080 @ VGS = –4.5 V "4.0 0.120 @ VGS = –3.0 V "3.0 |
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si9801dy08-apr-05 | |
Si9802DYContextual Info: Si9802DY Dual N-Channel Reduced Qg, Fast Switching MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET |
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si9802dys-51303--rev19-dec-96 | |
Si9804DYContextual Info: Si9804DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 25 rDS(on) (W) ID (A) 0.023 @ VGS = 4.5 V "7.8 0.030 @ VGS = 3.0 V "6.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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si9804dy18-jul-08 | |
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Contextual Info: Si9801DY Vishay Siliconix N-/P-Channel, Reduced Qg, Fast Switching Half-Bridge PRODUCT SUMMARY VDS V N-Channel P-Channel 20 –20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 0.080 @ VGS = –4.5 V "4.0 0.120 @ VGS = –3.0 V "3.0 |
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si9801dys-61825--rev16-aug-99 | |
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Contextual Info: Si9806DY Siliconix Dual Gate, N-Ch Enhancement-Mode MOSFET New Product PRODUCT SUMMARY VDS V Gate 1 RDS(ON) (W) ID (A) 0.027 @ VGS = 4.5 V "7.0 0.038 @ VGS = 3.0 V "6.0 0.400 @ VGS = 4.5 V "1.8 0.570 @ VGS = 3.0 V "1.5 25 Gate 2 D SO-8 S 1 8 D G2 2 7 D S |
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si9806dys-4956111-feb-98 | |
SILICONIX Si9801
Abstract: Si9801
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OCR Scan |
si9801s-56944--23-nov-98siliconix si9801 | |
Si9804DYContextual Info: Si9804DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 25 rDS(on) (W) ID (A) 0.023 @ VGS = 4.5 V "7.8 0.030 @ VGS = 3.0 V "6.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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si9804dys-54699--rev01-sep-97 | |
Si9803DYContextual Info: Si9803DY Vishay Siliconix P-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V –25 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "5.9 0.060 @ VGS = –3.0 V "4.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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si9803dy18-jul-08 | |
Si9802DYContextual Info: Si9802DY Dual N-Channel Reduced Qg, Fast Switching MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.055 @ VGS = 4.5 V "4.5 0.075 @ VGS = 3.0 V "3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET |
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si9802dys-51303--rev19-dec-96 | |