SI6415 Search Results

Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8

Si6415DQ

Abstract: Si6415DQ-T1 Si6415DQ-T1-GE3
Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8

Si6415DQ

Contextual Info: SPICE Device Model Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6415DQ

Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "6.5 0.030 @ VGS = –4.5 V "5.2 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6415DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

2502P

Abstract: CBHK741B019 F63TNR FDW2502P Si6415DQ
Contextual Info: Si6415DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

Si6415DQ

Contextual Info: Si6415DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

Si6415DQ

Contextual Info: SPICE Device Model Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6415DQ

Abstract: Si6415DQ-T1
Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8

Si6415DQ

Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "6.5 0.030 @ VGS = –4.5 V "5.2 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6415DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

leadframe materials

Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8

Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8

Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8

Si6415DQ

Contextual Info: Si6415DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "6.5 0.030 @ VGS = –4.5 V "5.2 S* TSSOP-8 D S S G 1 2 3 4 D Si6415DQ 8 7 6 5 G D S S D *Source Pins 2, 3, 6 and 7 must be tied common. Top View

Contextual Info: Si6415DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "6.5 0.030 @ VGS = –4.5 V "5.2 S* TSSOP-8 D S S G 1 2 3 4 D Si6415DQ 8 7 6 5 G D S S D *Source Pins 2, 3, 6 and 7 must be tied common. Top View

Si6415DQ-T1

Abstract: Si6415DQ
Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8

Si6415DQ

Contextual Info: SPICE Device Model Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

diode 1 N 4747 A

Abstract: AN609 Si6415DQ 25166
Contextual Info: Si6415DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4435DY

Abstract: Si4710CY
Contextual Info: Si4710CY New Product Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking

mi4410

Abstract: MI4435 S39421 Si4431DY equivalent MI44 IRF7606 VME COnnector IRF7603 IRF7413 MMSF7N03HD
Contextual Info: Application Note 9 Using the S39421 as the Primary Control Circuit on a VME Live Insertion Card High availability is a key feature of many types of systems today. Whether the system is a central office switch, a private branch exchange or a server it is important the

Bi-Directional P-Channel mosfet

Abstract: si4720cy Si4435DY Si4720
Contextual Info: Si4720CY Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Two Independent Inputs D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

Si4435DY

Abstract: Si4720 Si4720CY
Contextual Info: Si4720CY Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Two Independent Inputs D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178