SI4922 Search Results

Si4922BDY

Abstract: SI4922BDY-T1-E3
Contextual Info: New Product Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) rDS(on) (Ω) 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • TrenchFET Power MOSFET • 100 % Rg and UIS tested

74856

Abstract: Si4922BDY
Contextual Info: SPICE Device Model Si4922BDY Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4922BDY

Contextual Info: SPICE Device Model Si4922BDY Vishay Siliconix Dual N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

3771

Abstract: AN609 Si4922DY
Contextual Info: Si4922DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4922DY

Contextual Info: Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View

4606 mosfet

Abstract: A 4606 4606 4438 transistor 4606 mosfet AN609 Si4922BDY
Contextual Info: Si4922BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4922DY

Contextual Info: Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View

SI4922BDY-T1-E3

Contextual Info: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View

Contextual Info: Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View

Si4922DY

Contextual Info: SPICE Device Model Si4922DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4922BDY

Abstract: Si4922DY Si4922DY-T1 si4922dy-t1-e3
Contextual Info: Specification Comparison Vishay Siliconix Si4922BDY vs. Si4922DY Description: Package: Pin Out: Dual P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4922BDY-T1-E3 replaces Si4922DY-T1-E3 Si4922BDY-T1-E3 replaces Si4922DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si4922DY

Contextual Info: SPICE Device Model Si4922DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: New Product Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) rDS(on) (Ω) 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • TrenchFET Power MOSFET • 100 % Rg and UIS tested

Contextual Info: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4922DY

Contextual Info: Si4922DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 8.8 30 0.018 @ VGS = 4.5 V 8.3 0.024 @ VGS = 2.5 V 7.2 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View

Contextual Info: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4922BDY

Abstract: si4922bdy-t1-e3
Contextual Info: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Si4922DY

Contextual Info: SPICE Device Model Si4922DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4922BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, e 0.016 at VGS = 10 V 8 30 0.018 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

6130IRZ

Abstract: ISL6123 ISL6123IR ISL6124 ISL6125 ISL6126 ISL6127 ISL6128 ISL6130
Contextual Info: ISL6123, ISL6124, ISL6125, ISL6126, ISL6127, ISL6128, ISL6130 Data Sheet February 5, 2007 FN9005.8 Power Sequencing Controllers Features The Intersil ISL6123, ISL6124, ISL6125, ISL6126, ISL6127, ISL6128 and ISL6130 are integrated four channel controlled-on/controlled-off power-supply sequencers with

pulse load resistors wattage calculation

Abstract: zener diode 18V 1W, 5% philips BZX84C18 BZX84C8V2 IRF7822 MIC2584 MIC2585 Si7892DP
Contextual Info: MIC2584/2585 Micrel MIC2584/MIC2585 Dual-Channel Hot Swap Controller/Sequencer General Description Features The MIC2584 and MIC2585 are dual-channel positive voltage hot swap controllers designed to facilitate the safe insertion of boards into live system backplanes. The MIC2584

DO5010P-332HC

Abstract: IHLP2525CZER1R0M01 MBR0530 Si4922DY SP6132 SP6134 SP6139
Contextual Info: Advanced SP6139 Wide Input, 1.3MHz Synchronous PWM Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ VCC 1 2.5V to 20V Step Down Achieved Using Dual Input Small 10-Pin MSOP Package Up to 15A Ouput Capability Highly Integrated Design, Minimal Components

SP6139

Abstract: Si4922DY SP6132 SP6134 DO5010P-332HC MBR0530 SD25-2R2 GL10 Si4336DY
Contextual Info: SP6139 Wide Input, 1.3MHz Synchronous PWM Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ VCC 1 2.5V to 20V Step Down Achieved Using Dual Input Small 10-Pin MSOP Package Up to 15A Ouput Capability Highly Integrated Design, Minimal Components