SI TRANSISTOR MARKING Search Results

3SK22

Abstract: 3SK222
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm Embossed Type Taping

transistor NEC D 882 p

Abstract: nec d 882 p transistor NEC b 882 p nec d 882 p transistor transistor NEC 882 p NEC 882 p transistor NEC b 882 nec d 882 p transistor transistor transistor nec d 882 nec d 882
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low V dd Use Unit: mm (Vds = 3.5 V) 2 . 1+ 0.2 Driving Battery Low Noise Figure :

Contextual Info: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R100T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description

3SK246

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK246 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • PACKAGE DIMENSIONS Unit : mm The C haracteristic of C ross-M odulation is good.

IJW120R070T1

Abstract: IJW120R silicon carbide
Contextual Info: SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C 1200 V CoolSiC™ Power Transistor IJW120R070T1 Final Da ta sheet Rev. 2.0, <2013-09-11> Po wer Ma nage m ent & M ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description

U94 marking

Abstract: 3SK224
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm ±8 (±10)*1 V Gate1 to Drain Voltage VG1D 18 V Gate2 to Drain Voltage VG2D

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain: G ps • Low Noise Figure NF = 2.0 dB TYP. f = 470 MHz Automatically Mounting:

3SK254

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz)

2SC254

Abstract: 3SK254
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery 2.1±0.2 NF1 = 2.0 dB TYP. (f = 470 MHz)

3SK242

Abstract: SK242
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. f = 200 MHz

3SK223

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB

transistor NEC 882 p

Abstract: 3SK255
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK255 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES Unit: mm (VDS = 3.5 V) V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage VG2S ±8*1 V

U94 marking

Abstract: 3SK22 TD226 3SK224 U94
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK224 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise Figure: NF = 1.8 dB TYP. f = 900 MHz • High Power Gain: G ps •

3SK252

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) NF1 = 2.0 dB TYP. (f = 470 MHz) 2 GPS = 19.0 dB TYP. (f = 470 MHz)

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK254 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz

diode u1G

Abstract: 3SK253
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) • Driving Battery V V Gate1 to Source Voltage VG1S ±8*1 Gate2 to Source Voltage

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low V dd Use • Driving Battery • Low Noise Figure : NF1 = 2.0 dB TYP. f = 470 MHz • High Power Gain

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES = 24 dB TYP. f = 470 MHz • High Power Gain: G ps • Low Noise Figure: NF = 2.0 dB TYP. (f = 470 MHz)

3SK242

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : G Ps = 24 dB TYP. f = 200 MHz

NEC k 1995 transistor

Abstract: 3SK176A rf id based home appliances control
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK176A RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain: • Low Noise Figure: GPS = 24 dB TYP. f = 470 MHz NF = 2.0 dB TYP. (f = 470 MHz)

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low V dd Use PACKAGE DIMENSIONS V ds = 3.5 V (Unit: mm) Driving Battery Low Noise Figure : NF = 1 .8 dB TYP. (f = 900 MHz)

3SK243

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK243 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. CM = 101 d B /i TYP. @ f = 470 MHz, G r = -3 0 dB

benzene detection

Abstract: TLP863
Contextual Info: TOSHIBA TLP863 TOSHIBA PHOTO-INTERRUPTER VCRS, COMPACT DISC PLAYERS INFRARED LED + PHOTODARLINGTON TRANSISTOR TLP863 COPIERS, FAX MACHINES, PRINTERS VENDING MACHINES, TICKET MACHINES The TLP863 photo-interrupters combines a GaAs infrared LED with a high-sensitivity Si

3SK244

Abstract: 3SK244D U94 marking
Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK244 RF AMPLIFIER FOR UHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • U ltra Low N o ise F ig u r e : NF = 2.2 dB T Y P . f = 900 M Hz • High P ow er G ain