SI 06 Search Results

Contextual Info: X Lochbild board drillings Kontaktanordnung contact arrangement 32 Einlof Kontakte 32 solder contacts 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 Tj ki SI SI SI SI SI SI SI SI SI SI SI SI SI SI s o, si s s s s s s s s s s s s s s s □ □ □ □ □ □ □ □ □ □ □ □ □ □ □ □

Contextual Info: X Lochbild board drillings Kontaktanordnung contact arrangement 32 Einpress Kontakte 32 press-in contacts 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 Tj ki SI SI SI SI SI SI SI SI SI SI SI SI SI SI s o, si s s s s s s s s s s s s s s s □ □ □ □ □ □ □ □ □ □ □ □ □ □ □ □

Contextual Info: SI-B1 4000/1800-1.8 SI-B1 4000/1800-1.8 High Voltage Si-Rectifier Modules - Halfbridge Si-Hochspannungs-Gleichrichter Module - Halbbrücke Version 2011-06-16 Dimensions - Maße [mm] Nominal current – Nennstrom 1.8 A Alternating input voltage – Eingangswechselspannung

IRHSNA57Z60

Abstract: IRHSLNA53Z60 IRHSLNA54Z60 IRHSLNA57Z60 IRHSLNA58Z60 PD944
Contextual Info: PD-94400A RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSLNA57Z60 30V, N-CHANNEL Product Summary Part Number IRHSLNA57Z60 IRHSLNA53Z60 IRHSLNA54Z60 IRHSLNA58Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on)

IRHSNA57Z60

Abstract: IRHSLNA57Z60 IRHSNA53Z60 IRHSNA54Z60 IRHSNA58Z60
Contextual Info: PD-94237F RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 IRHSNA57Z60 30V, N-CHANNEL Product Summary Part Number IRHSNA57Z60 IRHSNA53Z60 IRHSNA54Z60 IRHSNA58Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 3.5mΩ

Contextual Info: PD-94237F IRHSNA57Z60 30V, N-CHANNEL RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT SMD-2 Product Summary Part Number IRHSNA57Z60 IRHSNA53Z60 IRHSNA54Z60 IRHSNA58Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 3.5mΩ

106 PED-ST

Abstract: 090 PUL-SI 093 PMG-SI 094 PME-SI 096 PLL-4TSI 095 PLL-4TSI
Contextual Info: Selection Chart Vishay Large and Screw Terminal Series 090 PUL-SI 093 PMG-SI 094 PME-SI 096 PLL-4TSI 095 PLL-4TSI 104 PHL-ST 106 PED-ST www.vishay.com 8 For technical questions contact: aluminumcaps@vishay.com Document Number: 28381 Revision: 16-Jan-06

Contextual Info: PD - 93820A IRHNJ7130 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 500K Rads (Si) IRHNJ8130 1000K Rads (Si)

Contextual Info: PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si)

IRHNJ3130

Abstract: IRHNJ4130 IRHNJ7130 IRHNJ8130
Contextual Info: PD - 93820A IRHNJ7130 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 500K Rads (Si) IRHNJ8130 1000K Rads (Si)

IRHM3Z60

Abstract: IRHM4Z60 IRHM7Z60 IRHM8Z60
Contextual Info: PD - 91701B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si)

LA6500

Abstract: NI 6501 LA6501 LM675 CA3105
Contextual Info: # J " I '0=10 7 '?=M '£E=1H ‘T=AV EE=ra [» A » ] © 0P % 93JS3p % / / / / / / / / so cm x ao oa / / / / / SI ’O / / / / / / / / / / / SI ‘0 so SI Ü / / 9 / / / / / g / / A / ETT / A°/A a? flp / / / 001 06 08 / / / / / / / / / / / / / / % SU

diode B2 sm

Abstract: B2125
Contextual Info: Rectifier Diode Bridges ui V rrm V 1 > > Type Ifsm Ifavm A A V T y jm a x 60/ 52-30 Si 150 60 B2 125/110-30 Si 300 125 B2 250/225-30 Si 700 250 B2 380/340-30 Si 1100 380 outline ° C Last, load Charge: R/C 10 ms, B2 T . , max 10/9 280 BK1 175 17/15* B2 500/450-30 Si 1500 500

CXP10

Contextual Info: '3 * -W molate 2S6K x 8 CMOS Vìdeo RAM MVM8256X-10/12/15 Issue 1.2 : January 1993 S e m ic o n d u c to r ADVANCE PRODUCT INFORMATION Inc. ^ 262,144 x 8 CMOS Video RAM N < ckage Type - Features >< Pin Definition 40 GND1 SI/07 SI/06 37 Sl/05 36 SI/04 35 SE

IRF N-Channel Power MOSFETs

Abstract: IRHY3230CM IRHY4230CM IRHY7230CM IRHY8230CM JANSR2N7381
Contextual Info: PD-91273E IRHY7230CM JANSR2N7381 200V, N-CHANNEL REF:MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY7230CM 100K Rads (Si) IRHY3230CM 300K Rads (Si) IRHY4230CM 500K Rads (Si)

Contextual Info: TIP115, TIP116, TIP117 PNP General PurposeTransistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren PNP Version 2004-06-21 Collector current – Kollektorstrom 2A Plastic case Kunststoffgehäuse TO-220AB Weight approx. – Gewicht ca. 2.2 g

Contextual Info: PD - 93791B IRHF57034 JANSR2N7492T2 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 REF: MIL-PRF-19500/701 5 Product Summary Part Number Radiation Level IRHF57034 100K Rads (Si) IRHF53034 300K Rads (Si) IRHF54034 TECHNOLOGY ™ 600K Rads (Si)

Contextual Info: Extract from the online catalog TRKS 4-SI 5X20 OG Order No.: 2702186 The illustration shows versions TRKS 4-SI and TRKS 4/1-SI in orange Transformer terminal block, Connection method: Screw connection,

Contextual Info: Version 1.1 ATP Velocity SI Pro 2.5” SATA SSD Specification ATP Velocity SI Pro 2.5” SATA SSD Specification Version 1.1 Your Ultimate Memory Solution! 1 ATP Confidential & Proprietary Version 1.1 ATP Velocity SI Pro 2.5” SATA SSD Specification Disclaimer

Leistungsdiode

Abstract: "RECTIFIER DIODE" B2-380/340-30SI
Contextual Info: Rectifier Diode Bridges Type V rrm V rms V Gleichrichterdioden Brücken Ifsm I favm "i"vj max A A °c V 10 ms, V Tyjmax B2 60/ 52-30 SI 150 60 B2 125/110-30 SI 300 125 B2 250/225-30 Si 700 250 B2 380/340-30 SI 1100 380 outline Last, load Charge: R/C 280 10/9

Contextual Info: Extract from the online catalog TRKS 4-SI 5X20 GY Order No.: 2702225 The illustration shows versions TRKS 4-SI and TRKS 4/1-SI in orange Transformer terminal block, Connection method: Screw connection,

DBI25-12

Contextual Info: DBI25-005A . DBI25-16A DBI25-005A . DBI25-16A Three-Phase Si-Bridge-Rectifiers Dreiphasen-Si-Brückengleichrichter Version 2011-06-03 35 ±0.2 Nominal current Nennstrom ±0.2 5.5 ±0.2 4.0 Repetitive peak reverse voltage Periodische Spitzensperrspannung

TIP111

Abstract: TIP112
Contextual Info: TIP110, TIP111, TIP112 NPN General PurposeTransistors Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren NPN Version 2004-06-21 Collector current – Kollektorstrom 2A Plastic case Kunststoffgehäuse TO-220AB Weight approx. – Gewicht ca. 2.2 g

SA158

Abstract: SA154 DO-213AB SA155 SA156 SA157 SA159 SA160
Contextual Info: SA154 . SA160 SA154 . SA160 Fast Switching Surface Mount Si-Rectifiers Schnelle Si-Gleichrichter für die Oberflächenmontage Version 2005-06-21 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.5 50.1000 V