SHE000 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNA1801L (PN168) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High sensitivity  Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Photo IC PNA4603H Bipolar integrated circuit with photodetection functions Unit: mm For brightness control systems 1.0±0.15 2.0±0.15 Unit VCC 7 V Operating ambient temperature Topr Storage temperature

PNZ300F

Abstract: PN300 PN300F PNZ300
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ300 (PN300), PNZ300F (PN300F) Silicon planar type φ4.6±0.15 PAZ300 12.7 min. M Di ain sc te on na tin nc ue e/ d For optical control systems • Features 1. 3° 0± 0. 15 ±

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ335 (PN335) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  Flat side-view type package  High coupling capabillity suitable for plastic fiber

Contextual Info: Photo IC PNA4611M, PNA4613M, PNA4614M Photodiode with amplifier functions For infrared remote control systems Unit: mm 5.25±0.3 VCC Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg 0.8 (5°) R2.25±0.1 (5°) 8.0±0.2 (5.2)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107 (PN107) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d  High sensitivity: IL = 5 mA (min.)  Narrow directivity characteristics for effective use of light input

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108 (PN108) Silicon planar type For optical control systems • Features  Absolute Maximum Ratings Ta = 25°C Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll

PNA4S06M

Abstract: PNZ323B
Contextual Info: Photo IC PNA4S06M Photodiode with amplifier functions For infrared remote control systems Unit: mm • Features  Extension distance is 10 m or more  External parts not required  Reflow soldering support 1 – 0.5 to +5 V Power dissipation PD 200

PNZ263L

Contextual Info: Darlington Phototransistors PNZ263L PN263L-(NC Silicon planar type 1.95±0.25 1.4±0.2 φ1.1 3.0±0.3 0.9 0.5 1.1 0.8 Not soldered 2.15 max. R0.5 Symbol Rating Unit Collector-emitter voltage (Base open) VCEO 20 V Emitter-collector voltage (Base open) VECO

Contextual Info: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin

Contextual Info: Phototransistors PNZ154 PN154 Silicon NPN type For optical control systems Unit: mm 4.5±0.3 3.9±0.3 1.2 0.9 1.7±0.2 0.8 12.8 min. 2.8 2.4 • High sensitivity • Fast response: tr = 4 µs (typ.) • Wide spectral sensitivity characteristics, suited for detecting various

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ263L (PN263L-(NC) Silicon planar type 1.95±0.25 1.4±0.2 φ1.1 3.0±0.3 0.9 0.5 1.1 0.8 Not soldered 2.15 max. R0.5 Symbol Rating Unit Collector-emitter voltage (Base open)

Contextual Info: Photo IC PNA4S87F Photo IC for LD power monitors For record system optical disc apparatus 3 2 Unit: mm 1.5 1 4.9±0.1 φ0.7 Detector 4 5 6 4.0±0.15 (1.25x2=2.5) 6-0.7 Symbol Rating Unit Supply voltage VCC 6 V Power dissipation PD 250 mW Operating ambient temperature

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNA3602L PIN Photodiode Unit: mm 2.9±0.25 For optical control systems 1.2 4.5±0.3 • Absolute Maximum Ratings 1.7±0.2 0.8 12.8 min. 2-1.2±0.3 Ta = 25°C 2-0.45±0.15 1 Parameter

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ154 (PN154) Silicon NPN type For optical control systems Unit: mm 4.5±0.3 3.9±0.3 1.2 0.9 1.7±0.2 0.8 12.8 min. 2.8 2.4 • High sensitivity • Fast response: tr = 4 µs (typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 2.0 • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs:

Contextual Info: Photo IC PNA4610M Bipolar Integrated Circuit with Photodetection Function Unit: mm For infrared remote control systems 0.8 2.0±0.15 3-1.5±0.2 Symbol Rating Unit Power supply voltage VCC − 0.5 to +7 V Power dissipation PD 200 mW Operating ambient temperature

Contextual Info: Phototransistors PNZ123S PN123S Silicon planar type Unit: mm φ3.0±0.15 3.75±0.3 • Features 12.5 min. • High sensitivity • Low dark current • Fast response: tr = 3 µs (typ.) • Small size (φ3) ceramic package 2.0±0.2 For optical control systems

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ323 (PN323) Silicon planar type For optical control systems Unit: mm 4.6±0.2 Chip Not soldered 1.5 max. (1.0) 5.5±0.2 (0.5) 1.5±0.2 (2-0.6±0.1) 22.25±1.0 31.25±1.0 (1.32)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Photo IC PNA461xM Series Photodiode with amplifier functions For infrared remote control systems Unit: mm VCC Unit − 0.5 to +7 V Power dissipation PD 200 mW Operating ambient temperature Topr

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ155 (PN155) Silicon planar type Unit: mm 4.5±0.15 3.9±0.25 • Features 1.6±0.15 0.8±0.1 12.8 min. (2.95) • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNA3W01L (PN307) Silicon planar type For optical control systems Unit: mm Type number : cathode mark (Purple) • Features 10.0 min. • High sensitivity, high reliability • Peak emission wavelength matched with infrared light emitting

Contextual Info: Photo IC PNA4S87F Photo IC for LD power monitors For record system optical disc apparatus 3 2 Unit: mm 1.5 1 4.9±0.1 φ0.7 Detector • Features M Di ain sc te on na tin nc ue e/ d • High-speed response supports 40 times normal speed (settling time < 10 ns)