SHARP AMPLIFIER SM 30 H Search Results

circuit diagram 2.1 speaker amplifier

Abstract: IR3N81A voice amplifer ic phone IC
Contextual Info: SHÀRP E L E K / MELEC D IV Speaker Phone 1C • IR3N81A Speaker Phone IC • Description 1 SE D I a i a i m a 0002*40=1 T-7 7-07 -/S' IR3N81A Pin Connections The IR3N81A is a speaker-phone IC for use in a hand-free telephone set. It is designed for opera­

IR3741

Abstract: Sharp amplifier SM 30 Sharp amplifier SM 30 h
Contextual Info: General Purpose Operational Amplifier IR3741/IR3741N IR3741/IR3741N • Amplifier Description T h e IR 3741/IR 3741N is a general purpose high p erform an ce operational am plifier. High com m on m od e v o lta g e ran ge and a b s e n c e o f “L a tc h -u p ”

aah8

Abstract: 1R94558 94559 ir94558 IR-94558 X15V IR94558N 1r9455 IR94559 RCA2K
Contextual Info: IR94558/IR94558N/IR94559/IR94559N Low Noise Dual Operational Am plifier T -77-<%• t o IR94558/IR94558N/IR94559/IR94559N Low Noise Dual Operational Amplifier • Description The IR94558/1R94558N and IR94559/IR94559N are .tow noise dual operational amplifiers. High input

ic stk 442 130

Abstract: STK 442 - 130 stk 442 -130 ic stk 442 130 pin view STK 442 130 M STK 5 channel amp stk power amp
Contextual Info: A nalog-Digital Interface for M O D E M LR4906 • LR4906 Analog-Digital Interface for MODEM Description Pin Connections ,a « „ - . „ - o c - ' - z a a » * Q o c a e > ■c>oa- t-QD T he LR4906 is an analog/digital interface LSI pro­ viding an analog iterface with the telephone line and

91458N

Abstract: Sharp amplifier SM 30 IR91458/N
Contextual Info: IR91458/IR91458N General Purpose Dual Operational Amplifier IDQ1 yiCQ /IDQ 1 A COM I t w 1 4 3 0 / I KZ/ 1 4 D o N • ■ Description General Purpose Dual Operational Amplifier Pin Connections T h e IR 9 1 4 5 8 /IR 9 1 4 5 8 N is a general purpose dual operational amplifier, which have sh o rt-circu it p ro­

IR9022N

Abstract: IR9022 equivalent IR9022
Contextual Info: Low Power Dual Operational Amplifier IR9022/IR9022N IDQHOO /ID Q H O O M II\ 9 U ^ 4 .I> I • ■ Description T h e IR 9 0 2 2 /IR 9 0 2 2 N is a dual low p o w er o p er­ atio n a l a m p lifier fo r u s e in v a rie ty o f low p o w er applications including b a tte ry -o p e ra te d circuits.

bs2s7vz

Abstract: pc3hu7 GP1UX31QS RJ2351 DARLINGTON TRANSISTOR ARRAY gw6dge40 PQ1LAxx5MSPQ Series PQ1CX41 LR0G956 LR35501
Contextual Info: Electronic Components http://sharp-world.com/products/device/ March 2014 2014-03 CONTENTS TFT LCD 2 LCD Modules. 2 Imaging CMOS IMAGE SENSORS / CCDs SYSTEM LSIs 18 System LSIs . 18

Laser Diode 405 nm Sharp

Abstract: LR36B15 LR388K4 Laser Diodes 405 nm catalog PQ1LAxx5MSPQ Series
Contextual Info: Electronic Components http://sharp-world.com/products/device/ March 2015 2015-03 CONTENTS TFT LCD 2 LCD Modules. 2 Imaging CMOS IMAGE SENSORS / CCDs 6 CMOS Camera Modules Road Map. 6

84-1LMI

Abstract: NN12 MARCONI amplifier
Contextual Info: P35-5700-000-200 HEMT MMIC LOW NOISE AMPLIFIER, 5-6GHz Features • • • • • 22 dB Gain typical Less than 1.75 dB Noise Figure 0.20 µm pHEMT technology Simple bias arrangement Low supply current; 20mA typ. Description The P35-5700-000-200 is a high performance Gallium Arsenide Low Noise Amplifier MMIC. It is primarily

LZ2121J

Abstract: LZ2121 LZ92E62
Contextual Info: CCD Area Sensor for 1/2 " PAL Color LZ2121J • LZ2121J CCD Area Sensor for 1/2" PAL Color ■ Description The LZ2121J is a 1/2 inch solid-state image sensor comprised of PN-junction photodiodes and CCDs charge-cou pled d ev ice . Having approxim ately 320,000 (542 horizontal X 582 vertical) pixels, the

Contextual Info: P35-5104-000-200 Advance Product Information HEMT MMIC LOW NOISE AMPLIFIER, 2 - 20GHz Features • • • • • Cascode Configuration 10 dB Gain Typical 0.20 µm PHEMT technology AGC control with gate bias Less than 4.0 dB noise figure 2 - 18GHz Description

sm 0038

Abstract: sm 0038 data sheet sm 0038 datasheet 84-1LMI NN12
Contextual Info: P35-5113-000-200 HEMT MMIC LNA 20 - 32GHz Features • • • Typical 2.1dB Noise Figure @24GHz &28GHz Self Biased Design 2.36 x 0.94mm Die Size Description The P35-5113-000-200 is a 20-32GHz Gallium Arsenide Self-Biased low noise amplifier. This product is intended

Ultrasonic cleaner circuit diagram

Abstract: MARCONI power P35-5133-000-200 H40P NN12
Contextual Info: P35-5133-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 24GHz Features • • • • Gain; 19dB typical @ 24GHz P-1dB; 29dBm typical @ 24GHz 20% PAE 0.20 um pHEMT technology Description The P35-5133-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers

H40P

Abstract: NN12 P35-5127-000-200 MARCONI power
Contextual Info: P35-5127-000-200 HEMT MMIC DRIVER AMPLIFIER, 22-34GHz Features • • 20dBm Output Power 18dB Gain Description The P35-5127-000-200 is a high performance 22-34GHz Gallium Arsenide driver amplifier. This product is intended for use in fixed-point microwave systems and point to point microwave systems . The second and third

84-1LMI

Abstract: NN12 P35-5114-000-200 MARCONI amplifier
Contextual Info: P35-5114-000-200 HEMT MMIC LNA 20 - 32GHz Features • • Typical 2.2dB Noise Figure @24GHz to 28GHz 2.36 x 0.94mm Die Size Description The P35-5114-00-200 is a 20-32GHz Gallium Arsenide low noise amplifier. This product is intended for use in fixed-point and point to point microwave systems.

84-1LMI

Abstract: NN12 P35-5104-000-200 MARCONI power MARCONI amplifier
Contextual Info: P35-5104-000-200 HEMT MMIC LOW NOISE AMPLIFIER, 2 - 20GHz Features • • • • • • Cascode Configuration 10 dB Gain Typical pHEMT technology AGC control with gate bias Less than 4.0 dB noise figure 2 - 18GHz Description The P35-5104-000-200 is a high performance low noise 2 - 20GHz Gallium Arsenide monolithic travelling wave

IR9161

Contextual Info: Low Power Quad Comparator IR 9 16 1/IR 9 1 61 N IR9161/IR9161N • ■ Description Comparator Pin Connections T h e IR 9 1 6 1 /IR 9 1 6 1 N is a low pow er guad com pa­ ra to r capable of controlling a supply cu rrent, input bias cu rre n t and output cu rren t by an extern al single

NN12

Abstract: P35-5140-000-200 MARCONI power
Contextual Info: P35-5140-000-200 HEMT MMIC BROADBAND AMPLIFIER, 20 - 40GHz Features • • • • 21dBm Typical Saturated Output Power 20dB Typical Gain 1.72 x 0.76mm Die Size Low Current Typically <200mA @4.5V Description The P35-5140-000-200 is a high performance 20-40GHz Gallium Arsenide amplifier. This product is intended for

H40P

Abstract: NN12 P35-5135-000-200
Contextual Info: P35-5135-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 28GHz Features • • • Gain; 16dB typical @ 28GHz P-1dB; 27dBm typical @ 28GHz 5dB Typical Noise Figure Description The P35-5135-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers

DB 5118

Abstract: 84-1LMI NN12 P35-5117-000-200 P35-5118-000-200
Contextual Info: P35-5118-000-200 HEMT LNA 37-40GHz Features • • • 2 Stage LNA 15dB Gain 3 dB Noise Figure Description This datasheet gives the performance of a 37 – 40GHz Gallium Arsenide Low Noise Amplifier. This product is intended for use in fixed-point and point to point microwave systems. The LNA has a single drain supply, with

84-1LMI

Abstract: NN12 P35-5117-000-200
Contextual Info: P35-5117-000-200 HEMT LNA 37-42GHz Features • • 20dB gain 3 dB Noise Figure Description This datasheet shows the performance of a 37 – 42GHz Gallium Arsenide Low Noise Amplifier. This product is intended for use in fixed-point and point to point microwave systems. The LNA has a single drain supply, with

IR3F01

Abstract: 3F01N IR3F SHARP IC ir3f01n TIC 106 n
Contextual Info: Low P o w er D ual O p e ra tio n a l A m p lifie r IR 3 F 0 1 /IR 3 F 0 1 N IR3F01/IR3F01N • D e s c rip tio n « T rDual0perational ■ T he IR 3F01/IR 3F01N is a high performance low p o w er dual operational am plifier, w hich o p e r a tes from a signal pow er supply over a wide range of vol­

H40P

Abstract: NN12 P35-5136-000-200 MARCONI power
Contextual Info: P35-5136-000-200 HEMT MMIC POWER AMPLIFIER, 28GHz Features • • • Gain; 15dB typical @ 28GHz P-1dB; 29dBm typical @ 28GHz 0.20 µm pHEMT technology Description The P35-5136-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers

H40P

Abstract: MARCONI power NN12 P35-5134-000-200
Contextual Info: P35-5134-000-200 HEMT MMIC 1W POWER AMPLIFIER, 24GHz Features • • • Gain; 16dB typical @ 24GHz P-1dB; 30.5dBm typical @ 24GHz 0.20 ? m pHEMT technology Description The P35-5134-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers