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    SH2010 Search Results

    SH2010 Datasheets (8)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JMSH2010BE
    Jiangsu JieJie Microelectronics Co Ltd 200 V N-Ch Power MOSFET with 9.1 mΩ RDS(ON) at 10 V VGS, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, high continuous drain current of 129 A, and operating junction temperature up to 175 °C. Original PDF
    badge JMSH2010PC
    Jiangsu JieJie Microelectronics Co Ltd 200V, 135A N-channel Power MOSFET with 7.6mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge and ultra-low on-resistance for power management and switching applications. Original PDF
    badge JMSH2010BS
    Jiangsu JieJie Microelectronics Co Ltd 200V, 130A N-channel Power MOSFET in TO-247-3L package with 8.8 mOhm typical RDS(ON) at 10V VGS, low gate charge, and designed for high-efficiency power switching applications. Original PDF
    badge JMSH2010BTL
    Jiangsu JieJie Microelectronics Co Ltd 200V 118A N-channel Power MOSFET in PowerJE®10x12 package with 8.0 mΩ RDS(ON) at 10V VGS, featuring low gate charge, high avalanche energy rating, and suitable for power management and switching applications. Original PDF
    badge JMSH2010PE
    Jiangsu JieJie Microelectronics Co Ltd 200V, 135A N-channel Power MOSFET with 7.6mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge and ultra-low on-resistance for power management and switching applications. Original PDF
    badge JMSH2010PS
    Jiangsu JieJie Microelectronics Co Ltd 200V, 122A N-channel Power MOSFET in TO-247-3L package with 8.0mΩ typical RDS(ON) at 10V VGS, featuring low gate charge and ultra-low on-resistance for power management and switching applications. Original PDF
    badge JMSH2010PTL
    Jiangsu JieJie Microelectronics Co Ltd 200V 7.2mW N-Ch Power MOSFET in PowerJE10x12 package, with 119A continuous drain current, 10V gate threshold voltage, low gate charge, and ultra-low on-resistance for power management and switching applications. Original PDF
    badge JMSH2010BC
    Jiangsu JieJie Microelectronics Co Ltd 200 V N-Ch Power MOSFET with 9.1 mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, high continuous drain current up to 129 A, and junction temperature range from -55 to 175 °C. Original PDF