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SH-201
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KEMET
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Filters - Common Mode Chokes - CMC TROID, NI-ZN, 0.5UH, TH UL94 |
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331.33KB |
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SH-201
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NEC
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Inductor: Common Mode: 0.5u: 3: Radial |
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88.6KB |
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JMSH2010PC
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Jiangsu JieJie Microelectronics Co Ltd
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200V, 135A N-channel Power MOSFET with 7.6mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge and ultra-low on-resistance for power management and switching applications. |
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JMSH2010BS
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Jiangsu JieJie Microelectronics Co Ltd
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200V, 130A N-channel Power MOSFET in TO-247-3L package with 8.8 mOhm typical RDS(ON) at 10V VGS, low gate charge, and designed for high-efficiency power switching applications. |
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MSH20170G1
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Maplesemi
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1700V silicon carbide diode with 20A continuous forward current, fast switching, high-frequency operation, and low forward voltage of 1.8V at 20A and 25°C, suitable for power factor correction and motor drives. |
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JMSH2010BE
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Jiangsu JieJie Microelectronics Co Ltd
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200 V N-Ch Power MOSFET with 9.1 mΩ RDS(ON) at 10 V VGS, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, high continuous drain current of 129 A, and operating junction temperature up to 175 °C. |
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JMSH2010BTL
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Jiangsu JieJie Microelectronics Co Ltd
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200V 118A N-channel Power MOSFET in PowerJE®10x12 package with 8.0 mΩ RDS(ON) at 10V VGS, featuring low gate charge, high avalanche energy rating, and suitable for power management and switching applications. |
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MSH20120G1
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Maplesemi
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1200V silicon carbide Schottky diode with 20A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
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JMSH2010PE
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Jiangsu JieJie Microelectronics Co Ltd
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200V, 135A N-channel Power MOSFET with 7.6mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge and ultra-low on-resistance for power management and switching applications. |
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JMSH2010PS
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Jiangsu JieJie Microelectronics Co Ltd
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200V, 122A N-channel Power MOSFET in TO-247-3L package with 8.0mΩ typical RDS(ON) at 10V VGS, featuring low gate charge and ultra-low on-resistance for power management and switching applications. |
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JMSH2010PTL
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Jiangsu JieJie Microelectronics Co Ltd
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200V 7.2mW N-Ch Power MOSFET in PowerJE10x12 package, with 119A continuous drain current, 10V gate threshold voltage, low gate charge, and ultra-low on-resistance for power management and switching applications. |
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JMSH2010BC
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Jiangsu JieJie Microelectronics Co Ltd
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200 V N-Ch Power MOSFET with 9.1 mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, high continuous drain current up to 129 A, and junction temperature range from -55 to 175 °C. |
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JMSH2010PC
