SGW23N60UFDTM Search Results
SGW23N60UFDTM Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SGW23N60UFDTM |
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Discrete, High Performance IGBT with Diode | Original | 598.75KB | 8 |
SGW23N60UFDTM Price and Stock
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onsemi SGW23N60UFDTMIGBT 600V 23A TO-263 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SGW23N60UFDTM | Reel | 800 |
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SGW23N60UFDTM | 45,250 | 284 |
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Rochester Electronics LLC SGW23N60UFDTMIGBT 600V 23A TO-263 |
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SGW23N60UFDTM | Bulk | 273 |
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Fairchild Semiconductor Corporation SGW23N60UFDTMInsulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SGW23N60UFDTM | 45,626 | 1 |
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SGW23N60UFDTM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SGW23N60UFD Ultra-Fast IGBT General Description Features Fairchild's UFD series of Insulated Gate Bipolar Transistors IGBTs provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is |
Original |
SGW23N60UFD SGW23N60UFD SGW23N60UFDTM O-263 |