SG DIODE MARKING Search Results

diode MARKING CODE sg

Abstract: marking code SG diode sg 03 sg diode code marking MARKING CODE sg 06 SG DIODE RB520S-30 MARKING SG diode marking sg code sg
Contextual Info: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications Features PINNING • Extremely small surface mounting type. DESCRIPTION PIN • High reliability. 1 Cathode 2 Anode 2 1 SG Top View Marking Code: "SG"

marking sg

Abstract: diode SOD-323 SD107WS SG DIODE MARKING
Contextual Info: SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance 1.30 · ·

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features 1.00 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD107WS SCHOTTKY DIODE SOD-323 Features ０．８５ 1.70 Marking: SG 2.65 0.30 • · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications

BAR19

Contextual Info: C T SG S-TH O M SO N ^ 7 # . HDlgœilLIgTOOIfSlDgi BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE RATINGS limiting values Repetitive Peak Reverse Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 SD107WS FAST SWITCHING DIODES + FEATURES z Low turn-on voltage z Fast switching - MARKING: SG Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃

Contextual Info: /= T SG S-TH O M SO N BAT 41 SMALL SIGNAL SCHO I IKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against ex­ cessive voltage such as electrostatic discharges.

SMD MARKING CODE sg

Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Contextual Info: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top

Contextual Info: £ ÿ j SG S-TH O M SO N D»ilLiœ s R(|D(êS BYV 10-60 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­

220v 25a diode bridge

Abstract: TSI62B5 220v 5a diode bridge TSI120 TSI200B5 TSI120B5 TSI150B5 TSI180B5 TSI270B5 sgs marking code
Contextual Info: [= 7 SG S-THO M SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION . CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 xs . VOLTAGE RANGE FROM 62V to 270V ■ Maximum current: lo = 0.5A

ByV schottky

Contextual Info: C T SG S-TH O M SO N ^T/.llD lgœ ilLIgTrœ M gi BYV10-20A SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon rectifier diode in glass case featu­ ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre­

220v 25a diode bridge

Contextual Info: rZ J SG S-THOM SO N TSIxxxB5 TELEPHONE SET INTERFACE FEATURES • SINGLE DEVICE PROVIDING : DIODE BRIDGE BIDIRECTIONAL PROTECTION ■ CROWBAR PROTECTION ■ PEAK PULSE CURRENT: Ipp = 30A, 10/1000 jis . VOLTAGE RANGE FROM 120V to 270V ■ Maximum current : lo = 0.5

Schaffner IU 1237

Abstract: Schaffner 1237 NSG506C 7R2R23
Contextual Info: C T SG S-THO M SO N LDP24M TRANSIL LOAD DUMP PROTECTION PRELIMINARY DATASHEET • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION . HIGH SURGE CURRENT CAPABILITY: 30 A / 40 ms EXPONENTIAL WAVE a COMPLIANT WITH MAIN STANDARDS

Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away

SG40TC10M

Abstract: schottky diode marking A7 marking c1j c1j marking
Contextual Info: Schottky Barrier Diode mtm OUTLINE Twin Diode SG 40TC 1OM 100 V 40 A Feature • Tj=175°C • Full Molded • Tj=175°C • IS I r =60|j A • • L o w Ir = 6 0 | j A • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • ig iU ÎŒ 2kV«IŒ

Diode MARKING S37

Abstract: transient voltage suppressor diode LDP24AS DTR7637 DIODE MARKING CODE 623
Contextual Info: r= 7 SG S-TtfO M SO N * 7 £ [M M iL E g ïM O g S LDP24AS TRANSIL LOAD DUMP PROTECTION FEATURES • TRANSIENT VOLTAGE SUPPRESSOR DIODE ESPECIALLY DESIGNED FOR LOAD DUMP EFFECT PROTECTION ■ HIGH SURGE CURRENT CAPABILITY : 40 A / 40 ms EXPONENTIAL WAVE ■ COMPLIANT WITH MAIN STANDARDS

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 20TC1OM 100V 20A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • (S lR = 3 0 p A • j r iiìè s b c u c < u •« » W Œ 2 k V S S I Tj=150°C Full Molded Low lR=30pA Resistance for thermal run-away

FTO-220G

Abstract: J533 J533-1
Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE SG 40 T C 1 2 M U n it : m m Package I FTO-220G Weight J.54g Typ o v h i j y iw ! ) 120V 40A 4.5 Feature • T j=175°C • T j= 1 7 S f C • y jis t- ib • Full M olded K • I r=60^A • Low lR=60pA • * W I Æ ® e ï: U C C IA

diode sg 52

Abstract: mosfet 1200V 25A MOROCCO B 108 B
Contextual Info: £ y j SG S-TH O M SO N TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS I f a v 25A V rrm 1200V (typ) 60ns (max) 1.9V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN

73b21

Contextual Info: r Z Z SG S -T H O M S O N • 7 f raooasiiLiieTr^omies S T T B 8 0 6 D l TURBOSWITCH ”B”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f(av) 8A V rrm 600V t r (typ) 50ns Vf (max) 1.3 V k- w - V FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERA­

diode sg 46

Abstract: SG DIODE MARKING diode sg 52 IGBT 2000V .50A
Contextual Info: £ ÿ j SG S-TH O M SO N n0 œ i l L I 0 ra [iïlBCi S T T A 5 1 2 D /F TURB O SW ITC H ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 5A V rrm 1200V (typ) 45ns (max) 2.0V trr Vf PR ELIM IN A R Y DATA FEATURES AND BENEFITS

marking AGs sot-23

Contextual Info: LNE150 &à Supertex inc. Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N BVoos (max) 500V 1.0KQ Order Number / Package If BVDSS/ Product marking forTO-236AB: TO-236AB* Die NEE* LNE150K1 LNE150ND where * = 2-week alpha date code

SG DIODE

Abstract: diode sg-64 diode sg 71
Contextual Info: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1

Contextual Info: r s T ^7 S G S - T H O M S O N # ffifli g®@[iiL[i(Sir®@oaD(gi R C D 1 6 -4 7 B R-C-D TERMINATOR NETWORKS FEATURES O Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot. □ Monolithic device for greater reliability.