SG DIODE CODE MARKING Search Results

diode MARKING CODE sg

Abstract: marking code SG diode sg 03 sg diode code marking MARKING CODE sg 06 SG DIODE RB520S-30 MARKING SG diode marking sg code sg
Contextual Info: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications Features PINNING • Extremely small surface mounting type. DESCRIPTION PIN • High reliability. 1 Cathode 2 Anode 2 1 SG Top View Marking Code: "SG"

SG DIODE

Abstract: diode sg-64 diode sg 71
Contextual Info: W83773G/SG W83773G / W83773SG Nuvoton H/W Monitoring IC DATE: OCTOBER 21TH, 2009 REVISION: 1.2 -I- W83773G/SG TABLE OF CONTENTS- 1. GENERAL DESCRIPTION . 1

marking AGs sot-23

Contextual Info: LNE150 &à Supertex inc. Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N BVoos (max) 500V 1.0KQ Order Number / Package If BVDSS/ Product marking forTO-236AB: TO-236AB* Die NEE* LNE150K1 LNE150ND where * = 2-week alpha date code

teledyne relay 412 screening

Abstract: TELEDYNE RELAYS DATE CODE teledyne diode Teledyne Relays 412 marking code 351 diode TELEDYNE 412
Contextual Info: TELEDYNE RELAYS Page 1 of 40 DETAIL SPECIFICATION FOR HIREL 412 RELAYS RELAYS, HIGH RELIABILITY, ELECTROMECHANICAL, NON-LATCHING, DPDT, LOW LEVEL TO 1.0 AMPERE, WITH OPTIONAL DIODE S FOR COIL TRANSIENT SUPPRESSION AND POLARITY REVERSAL PROTECTION TR-HIREL-1/412

TELEDYNE RELAYS DATE CODE

Contextual Info: TELEDYNE RELAYS Page 1 of 43 Feb 21, 2006 11:30 am DETAIL SPECIFICATION FOR HIREL 412V RELAYS RELAYS, HIGH RELIABILITY, HIGH VIBRATION, ELECTROMECHANICAL, NON-LATCHING, DPDT, LOW LEVEL TO 1.0 AMPERE, WITH OPTIONAL DIODE S FOR COIL TRANSIENT SUPPRESSION AND

marking code SG transistors

Abstract: LNE150 LNE150K1 LNE150ND diode MARKING CODE sg
Contextual Info: – – E T E LNE150 OBSOL Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code

LNE150

Abstract: LNE150K1 LNE150ND
Contextual Info: LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code

Contextual Info: Supertex inc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* Die NEE* 500V 1.0K& 3.0mA LNE150K1 LNE150ND where * = 2-week alpha date code

8.22 diode marking code

Abstract: mos n-channel SOT-23 LNE150 LNE150K1 LNE150ND diode code 10 marking code SG transistors
Contextual Info: LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code

supertex dmos

Contextual Info: Supertexinc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information ^DS O N Order Number / Package ' d (ON) BVDOs (max) (min) TO-236AB* 500V 1.0K£1 3.0mA LNE150K1 Product marking for TO-236AB: Die NEE* LNE150ND where * = 2-week alpha date code

SMD MARKING CODE sg

Abstract: diode MARKING CODE sg smd diode marking sG MARKING CODE sg 06 diode sg 01 diode smd marking code SG SG DIODE MARKING diode smd code SG sg smd code smd "code rc" transistor
Contextual Info: SB520WT SCHOTTKY BARRIER DIODE Features PINNING • Ultra small SMD package DESCRIPTION PIN • Very low forward voltage 1 Cathode 2 Anode Applications 2 1 • Ultra high speed switching SG RC • Voltage clamping • Low current rectification Top View Top

DA108S1

Contextual Info: SGS-IHOMSON •Hiera «! Application Specific Discretes A.S.D. DA108S1 DA112S1 D IO D E A R R A Y APPLICATION Protection of logic side of ISDN S-interface. Protection of I/O lines of microcontroller. Signal conditioning. FUNCTIONAL DIAGRAM : DA108S1 FEATURES

RB520S-30

Abstract: diode MARKING CODE sg diode sg 5 ts
Contextual Info: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications PINNING DESCRIPTION PIN Features • Extremely small surface mounting type. • Low IR. IR=0.1uA Typ. • High reliability. 1 Cathode

diode sg 5 ts

Abstract: diode MARKING CODE sg diode sg 12 SG DIODE MARKING RB520S-30 diode sg 01 diode sg 03
Contextual Info: RB520S-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification and High Speed Switching Applications PINNING DESCRIPTION PIN Features • Extremely small surface mounting type. • Low IR. IR=0.1uA Typ. • High reliability. 1 Cathode

Contextual Info: SEM ICON DU CTO R 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Specification Features: ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V TO-220FP DEVICE MARKING DIAGRAM High Switching Speed Device

MBRF20100ct

Abstract: MBRF20200CT MBRF20150CT
Contextual Info: SEM ICON DU CTO R 20A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier Specification Features: ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ 1 2 3 High Voltage Wide Range Selection, 100V, 150V & 200V TO-220FP DEVICE MARKING DIAGRAM High Switching Speed Device

diode marking code 7-7-7-7

Abstract: LCP15XX device marking sgl
Contextual Info: SGS-IHOMSON LCP150S •m Application Specific Discretes A.S.D. PROGRAM M ABLE TRANSIENT VOLTAGE SUPPRESSO R FOR SLIC PROTECTION FEATURES ■ DUAL PROGRAMMABLE TRANSIENT SUPPRESSOR ■ HIGH SURGE CURRENT CAPABILITY. - Ip p = 50A, 10/1000 |J,S. - Ip p = 60 A, 5/310 OS.

Contextual Info: SGM2021 Low Power, Low Dropout, Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2021 series low-power, low-noise, low-dropout, y Low Output Noise CMOS linear voltage regulators operate from a 2.5V to y Low Dropout Voltage 5.5V input voltage. They are the perfect choice for low

Contextual Info: S G S -ÏH O M S O N KÆOœ@[EL[iûre *i SMLVT3V3 LOW VOLTAGE TRANSIL FEATURES . • ■ ■ ■ ■ UNIDIRECTIONAL TRANSIL DIODE PEAK PULSE POWER : 600 W 10/1 OOO^s REVERSE STAND-OFF VOLTAGE = 3.3 V LOW CLAMPING FACTOR FAST RESPONSETIME UL RECOGNIZED

THDT58D

Abstract: breakover device diode sg 38 diode MARKING CODE sg thDT
Contextual Info: Si 30 E » H 7 ^ 2 3 7 0G 32 G 24 S• SGS-THOMSON ¡ÛLUgim«! SG S -T H O M S O N THDT 58 D TRISIL DESC RIPTIO N This protection device has been especially designed for subscriber line-card and terminal protection. By itself, It enables to protect integrated SLIC against

Contextual Info: SGM2020 Low Power, Low Dropout, RF - Linear Regulators GENERAL DESCRIPTION FEATURES The SGM2020 series low-power, low-noise, low-dropout, y Low Output Noise: CMOS linear voltage regulators operate from a 2.5V to 30µVRMS TYP 10Hz to 100kHz 5.5V input voltage. They are the perfect choice for low

Contextual Info: SGS-ÏHOMSON m œ m ie ra M o e s ADB18PS AUTOPROTECTED DIODE BRIDGE Application Specific Discretes A.S.D. MAIN APPLICATIONS Any electronic equipment needing a diode bridge and protection against transient overvoltage: • Caller Id ■ Handset DESCRIPTION

diode MARKING CODE sg

Abstract: SD107WS-7 SD107WS J-STD-020A MARKING SG marking code SG code sg
Contextual Info: SD107WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOD-323 Mechanical Data · · · · · · · Case: SOD-323, Plastic

diode MARKING CODE sg

Abstract: code sg sg diode code marking SG DIODE MARKING
Contextual Info: SD107WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · · Low Forward Voltage Drop Guard Ring Die Construction for Transient Protection Ideal for low logic level applications Low Capacitance SOD-323 Mechanical Data · · · · · · · Case: SOD-323, Plastic