SFE 5.5 Search Results

e10.7a

Abstract: sfe 5.5 murata E10.7F sfe10.7mhy E10.7A ceramic SFE10.7MA19 E10,7A SFE10.7MFP SFE10 SFE10.7MA21
Contextual Info: CERAMIC FILTERS LOW LOSS, WIDE OR NARROW BAND, MINIATURE SFE MA/MTE/MVE/MFP 10.7MHz The following filters were developed to offer both narrower and wider bandwidth characteristics for use in products such as DBS receivers. These filters also retain the same reliability

e10.7a

Abstract: E10.7F SFE10,7A murata SFE10.7MA21 -E107-T
Contextual Info: PIEZO FILTERS CERAMIC FILTERS LOW LOSS, WIDE OR NARROW BAND, MINIATURE SFE MA/MTE/MVE/MFP 10.7MHz The following filters were developed to offer both narrower and wider bandwidth characteristics for use in products such as DBS receivers. These filters also retain the same reliability

cq24-000

Abstract: Q24060 98l18
Contextual Info: Sfe- -<•' m2 DEVICE SPECIFICATION SERIES BiCMOS LOGIC ARRAYS Q24000 DESCRIPTION The AMCC Q24000 Series of BiCMOS logic arrays is comprised of six products with densities ranging from 720 to 13440 equivalent gates including a structured array with a high performance Phase-Locked Loop*.

LT 6742

Abstract: MURATA SFE MHZ sfe 5.5 murata murata sfe sfe 4.5 murata sfe murata murata sft ceramic filter murata filter murata ceramic filter sfe 5.5 SFE
Contextual Info: Ceramic Filters - Token Passive Components Taiwan CERAMIC FILTERS FOR TV/VCR STAGE CERAMIC FILTERS HIGH-SELECTIVITY CERAMIC FILTER FOR TV/VCR STAGE Ceramic Filter - High-Selectivity LTT High-Selectivity is 4 element devices that offer more selectivity than the conventional LT series Murata SFE . The

sfe 5.5 MB ceramic filter

Abstract: SFE 5.5 ceramic filter sfe 6,5 mb sfe 5,5 mb murata sfe sfe 5.5 murata SFE10M7 Murata SFE 4.7 Mb SFE 5.5 Mb sfe 4.5 murata
Contextual Info: TOKEN LT MB Ceramic Filters for TV/VCR Stage Ceramic Filters for TV/VCR Stage Ceramic Filters for TV/VCR Stage Murata SFE MB Compatible 4.5 MHz ~ 6.5 MHz Preview Token utilizes the latest piezo filter technology enabling the most cost-effective designs in manufacturing LT

Contextual Info: SSI 32F8144 ¿mmsvskms Programmable Electronic Filter A TDK G roup/C om pany January 1994 DESCRIPTION FEATURES This custom integrated circuit incorporates a pulse equalizer of variable equalization and variable band­ w idth w ith a tran sfe r function of a 2 zero/7 pole linear

Contextual Info: Technical Specifications 102 Series Fischer Connectors SA Saint-Prex, Switzerland Phone +41 21 800 95 95 Fax +41 21 800 39 24 www.fischerconnectors.com mail@fischerconnectors.ch Multipole Low Voltage Product range covered: S / SC / SA / SV / SOV / SS / SSC / WSO / SF / SFE / SFU / SFPE / SFPU / D / DB / DBP / DBPC / DG / DGP

Contextual Info: 10 | 3 | 2 | 1 i±se NOTES 1. m MATERIAL F (PA) . # y * m . S&.UL9LV-0 HOUSING : POLYAMIDE , GLASS FILLED, WHITE, UL9LV-D 7?f 7i-FV^)U7 7 l'(PPS), #7 •*:£*. Sfe • UL9LV-0 ACTUATOR : POLYPHENYLENE SULFIDE , GLASS FILLED, BROWN, UL94V-0 9- ?±)U : Uvfffld = 0.2 )

Contextual Info: UCC1888 UCC2888 UCC3888 y UNITRODE Off-line Power Supply Controller W ide 10OVDC to 400VD C Allow able Input Range Fixed 5VD C o r A djustable Low Voltage O utput O utput Sinks 200m A, Sources 150m A Into a M O SFE T G ate Uses Low C ost SM D Inductors Short C ircuit Protected

UFN533

Abstract: C1B4 FN531
Contextual Info: TH UNITRODE CORP 9347963 UNITRODE CORP 920 10708 D?^T347Tk3 Df- J 0Q1070& □ / POW ER M O SFE T T R A N S IS T O R S ufn53i UFN532 UFN533 100 Volt, 0.18 Ohm N-Channel FEATURES DESCRIPTION • • • • • « The Unitrode power M O S F E T d esign utilizes the m ost a dvanced technology available.

Contextual Info: A • R W .\A A P T 1 0 M 11 B 2 V R dvanced pow er Te c h n o lo g y " ioov 100a 0.01 i q POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,

IC 745 GU

Contextual Info: £ S Y Ü E M IC C D E S C R IP T IO N FEATURES • 525ps propagation delay The SY 10/100EL35 are high-speed JK Flip-Flops. The J/K data enters the m aster portion of the flip -flop when the clock is LOW and is tran sfe rre d to the slave and, thus, the outputs, upon a positive tran sitio n of the clock.

2SK2528-01

Abstract: SC-65 fus20
Contextual Info: S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : P o w e r M O SFE T 2 S K 2 5 2 8 - Q 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D AT E NAME APPROVED Fiiji Electric Co^lid DRAWN CHECKED o' z o 3: o

apt50m85jvr

Contextual Info: • R ADVANCED APT50M85JVR W /Æ P o w e r Techno lo g y soov soa o.ossq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

TI OAE

Contextual Info: • R ADVANCED W .\A p o w e r Te c h n o lo g y “ APT40M35JVR 400v 93a 0.035Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: • R A dvanced r M po w er Tec h n o lo g y APT20M22JVR 200V 97A 0.022Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: APT5020BVR • R A dvanced W .\A pow er Te c h n o l o g y “ soov 26a 0.200Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

Contextual Info: APT30M19JVR A dvanced W /Æ P O W E R Te c h n o lo g y ' • R 300V 0.01 9q 130a POWER MOS V‘ Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

2SK49

Abstract: transistor 2sk49 reciver circuit for radio transistor KIN NEC CIR TC306 radio reciver
Contextual Info: N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR D E S C R IP T IO N T he 2S K 49 is designed fo r use in FM tu n e r o f a po ta b le R A D IO P A C K A G E D IM E N S IO N S R E C IV E R . in m illim eters inches FEATURES • High F orw a rd T ra n sfe r A d m itta n c e .

Contextual Info: SO NY ICX059ALB 1/3 inch CCD Image Sensor for CCIR B/W Camera D escription T he IC X 059 A L B is an interline tra n sfe r C C D solid-state im ag e s e n s o r s u ita b le fo r C C IR B /W v id e o c a m e ra s . H igh se n sitiv e n e s s and low dark c u rre n t are a ch ie ved

MSM82C37A

Contextual Info: O K I semiconductor MSM82C37A - 5 RS/GS/JS PROGRAMMABLE DMA CONTROLLER GENERAL DESCRIPTION The M S M 8 2C 3 7 A -5R S /G S /JS , D M A {D irect M em ory Access controller is capable o f high-speed data tra n sfe r w ith o u t CPU in te rv e n tio n and is used as a peripheral device in m ic ro c o m p u te r s y s te m s . The device fe a tu re s fo u r

Contextual Info: 1/2 inch CCD Image Sensor for NTSC Color Camera D escrip tio n P a ck a g e O utline Unit: m m I C X 0 2 6 C K A is an in te rlin e tra n sfe r C C D s o lid -s ta te im a g e s e n s o r s u ita b le for N T S C 1/2 in ch c o lo r v id e o c a m e ra s . H igh se n sitiv ity is a c h ie v e d th ro u g h th e

74H87

Abstract: ScansUX991 54h8 93H87/74H87 54H87/BCBJC
Contextual Info: TTL/MSI 93H87/54H87, 74H87 HIGH SPEED 4-BIT TRUE/COMPLEMENT, ZERO/ONE ELEMENT D E S C R IP T IO N — The 9 3 H 8 7 /5 4 H 8 7 , 7 4 H 8 7 w ill p e rfo rm fo u r fu n c tio n s ; use o f th e B and C c o n tro l in p u ts d e te rm in e th e fu n c tio n p e rfo rm e d . A 4 -b it b in a ry n u m b e r A can be tra n sfe rre d to the o u tp u t

scsi electric diagram

Abstract: CXD1185AQ CXD118SAQ CXDI185AQ OFP064-P-1420-A ttd2
Contextual Info: CXD1185AQ S O N Y , Preliminary SCSI Controller LSI Description The CXD 1185AQ is a high performance CMOS SCSI co ntroller LSI th a t conform s to ANSIX3. 13 1 ­ 1986 standards. The CXD1185AQ is capable of operating in both in itia to r and ta rg e t modes. It satis­