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    SESI 22 Search Results

    SESI 22 Datasheets Context Search

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    Microspire

    Abstract: Microspire SMD 7 pin PULSE transformerS choke 220uh 6A ferrite space qualified Microspire sesi 9 package CT-91 mb0xxxxpart Microspire* CMC 17 Microspire SESI32
    Contextual Info: 6 .High Grade Technologies. .Custom Designs. SESI SMD Power Inductors and Transformers Microspire upgraded aircoil grid transfer + transfer moulding technology by using E-PLANAR ferrite cores ; which lead to the SESI product range SMD Energy Storage Inductors .


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    tra29 Microspire Microspire SMD 7 pin PULSE transformerS choke 220uh 6A ferrite space qualified Microspire sesi 9 package CT-91 mb0xxxxpart Microspire* CMC 17 Microspire SESI32 PDF

    SO41

    Abstract: SESI 18 M10 1W 5K6 2W 2 5 81 210 W 20 Microspire Microspire SMD
    Contextual Info: SMD Power Inductors - SESI 18 W • Energy storage, smoothing, filtering • Low profile and light • Highly efficient and reliable • Materials meet UL 94-V0 rating • Suited for IR and vapor reflow soldering • Frequency range up to 1 MHz • Operating temperature range : -40 to +100°C


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    94-V0 SO41 SESI 18 M10 1W 5K6 2W 2 5 81 210 W 20 Microspire Microspire SMD PDF

    9m68

    Abstract: SESI 9 15K 2WR ECSS-Q-70-02
    Contextual Info: 35 • • • • • • • Electrical Data 25°C Energy storage, smoothing, filtering Applied standards : ECSS-Q-70-02 , MIL-STD-202 , DO-160 Materials meet UL94-V0 rating Suited for IR and vapor reflow soldering Frequency range up to 1 MHz Operating temperature range : - 55 °C to + 125 °C


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    ECSS-Q-70-02 MIL-STD-202 DO-160 UL94-V0 9m68 SESI 9 15K 2WR ECSS-Q-70-02 PDF

    Microspire transformer

    Abstract: Microspire MTLM-2056 Transformers MSCI 10000 SESI 91 MPCI 233 100 000 G 10 en61558 Microspire SMD SMD Transistor dj rm ct08 series smd marking m11
    Contextual Info: lo o n Wound Magnetics Experts ch d u e T ro l P ia r to t n s u sig d e n D I m d o n a Fr e d ra G gh i H ace p S Aer s e i g io ct tics u a on ® e nc efe D ys a ailw R g Oil in rill ry st ndu D I al c edi M www.microspire.c m n  +HDG2IÀFH0LFURVSLUH


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    PDF

    Contextual Info: N-CHANNEL POWER MOSFETS SSP5N80/70 FEATURES • L o w e r R ds <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


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    SSP5N80/70 SSP5N80 SSP5N70 PDF

    IC 7585 adjust

    Contextual Info: y ^ UC5601 UNITRODE SCSI Active Terminator FEATURES DESCRIPTION Com plies with SCSI, SC S I-2 Standards 10pF C hannel C apacitance During D isconnect T he UC5601 p rovides precision resistive pull-up to a 2.9V reference fo r all 18 lines in a Sm all C om puter System s Interface SCSI bus cable. The


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    UC5601 IC 7585 adjust PDF

    Contextual Info: ÜMC U M 6264A Series 8K x 8 CMOS SRAM PRELIMINARY Features • S ingle+ 5 v o lt power supply ■ Access times: 100/120 ns m ax. 1 ■ F u lly static operation, no clock or refreshing required ■ D ire ctly T T L com patible: A ll inputs and outputs ■ Current:


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    6264AM PDF

    Contextual Info: Preliminary W91810N SERIES 23-MEMORY TONE/PULSE DIALER WITH HANDFREE, LOCK AND HOLD FUNCTIONS GENERAL DESCRIPTION The W91810N is a series of tone/pulse switchable telephone dialers with 23 memory, keytone, hold, lock, mute, volume control and handtree dialing control features. These chips are fabricated using


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    W91810N 23-MEMORY PDF

    MOS FET BUZ 444

    Abstract: 75516GF FPI 3I TI P1230 PD75516 nec 75x PD75P516GF KCY37 EVAKIT-75X
    Contextual Info: , NEC i ^ T ? — / \ f 7 • 5 / — S h m o s M O S In teg rated C ir c u it i PD75P516 //PD75P516 it, ¿ ¿ P D 7 5 5 1 R O M £ 9 > • ¿¿PD75P516 J, =L— tf'ic x %7°n 7 ^ A PROM i t z l t EPROM T # ® ^ / z ® nanT"To v * 5 rA P ^ f$ < 7 K fF ffl i


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    uPD75P516 //uPD75P516 PD75516 16256X8 uPD75P516GF-3B9 //uPD75P516K MOS FET BUZ 444 75516GF FPI 3I TI P1230 nec 75x PD75P516GF KCY37 EVAKIT-75X PDF