SENSITIVE GATE SILICON CONTROLLED RECTIFIER Search Results

Sensitive Gate

Contextual Info: భ఼ਘ! Sensitive Gate Silicon Controlled Rectifiers Sensitive Gate Silicon Controlled Rectifiers 可控硅 FH08E DESCRIPTION & FEATURES 概述及特點 Sensitive Gate Trigger Current靈敏門極觸發電流 Blocking Voltage to 600V 耐壓電壓達600V

C106M

Abstract: C106D C106B C106D to-126 C106d silicon controlled rectifier Silicon Controlled Rectifiers
Contextual Info: Central" C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging

c106d

Abstract: C106M C106D to-126 C106d silicon controlled rectifier c106b C106-D Sensitive Gate Silicon Controlled Rectifier to126 case C106M to-126 c106d to-220
Contextual Info: Central C106B C106D C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200 THRU 600 VOLTS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MCK100 Preliminary SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS  DESCRIPTION The UTC MCK100 is a sensitive gate silicon controlled rectifiers reverse blocking thyristor. It provides the customers with high surge

NTE5402

Abstract: NTE5401 NTE5405 NTE5404 NTE5406 NTE5400 NTE5403
Contextual Info: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR–thyristor) rated at 0.8 amps RMS maximum on–state current, with

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MCK100 Preliminary SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ SCR 1 SOT-89 DESCRIPTION The UTC MCK100 is a sensitive gate silicon controlled rectifiers reverse blocking thyristor. It provides the customers with high surge

NTE5402

Abstract: NTE5405 NTE5404 NTE5401 thyristor SCR 600V 8A NTE5406 NTE5400 To92 thyristor datasheet NTE5403
Contextual Info: NTE5400 thru NTE5406 Silicon Controlled Rectifier SCR 0.8 Amp Sensitive Gate, TO92 Description: The NTE5400 through NTE5406 sensitive gate SCR semiconductors are halfwave unidirectional gate controlled rectifiers (SCR−thyristor) rated at 0.8 amps RMS maximum on−state current, with

MRC22-8

Abstract: MRC22-6
Contextual Info: DATA SHEET MCR22-6 MCR22-8 SENSITIVE GATE SILICON CONTROLLED RECTIFIER TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MCR22 series types are PNPN Sensitive Gate Silicon Controlled Rectifiers manufactured in a TO-92 case, designed for CD ignition, fuel igniters, flash circuits, and motor control applications.

mcr22

Abstract: mcr22-8 mcr226
Contextual Info: Central MCR22-6 MCR22-8 Semiconductor Corp. SENSITIVE GATE SILICON CONTROLLED RECTIFIER 1.5 AMP, 400 THRU 600 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR MCR22-6 and MCR22-8 are PNPN Sensitive Gate Silicon Controlled Rectifiers manufactured in a TO-92 case, and designed for CD ignition, fuel igniters,

Contextual Info: DATA SHEET C106B THRU C106M 4.0A SENSITIVE GATE SILICON CONTROLLED RECTIFIER 200V to 600V JEDEC TO-126 CASE DESCRIPTION The Central Semiconductor C106B Series are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V to 600V. These devices are designed for applications such as temperature,

C106B2

Abstract: C106D2
Contextual Info: C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V

C106B2

Abstract: TO202-2 C106D2
Contextual Info: C106B2 C106D2 C106M2 SENSITIVE GATE SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 600 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C106B2 Series types are 4.0A, PNPN sensitive gate triggering silicon controlled rectifiers with voltages ranging from 200V

NTE5426

Abstract: 1A 400v scr to220
Contextual Info: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off–state to conduction by a current pulse applied to the gate terminal and is

NTE5426

Abstract: 1A 400v scr to220 SCR TRIGGER PULSE circuit "Silicon Controlled Rectifier" scr 250 amps SCR RECTIFIER SCR sensitive gate
Contextual Info: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate, TO220 Isolated Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off−state to conduction by a current pulse applied to the gate terminal and is

silicon-controlled rectifier

Abstract: BT258S-800LT
Contextual Info: BT258S-800LT SCR logic level, high temperature Rev. 01 — 2 September 2008 Product data sheet 1. Product profile 1.1 General description Passivated sensitive gate Silicon-Controlled Rectifier in a SOT428 surface-mounted plastic package 1.2 Features • Very sensitive gate

mcr100-6 sot-23

Abstract: mcr100g mcr100-6 sot23 MCR100L MCR100-8 SOT89 MCR100 MCR100-6 SCR 400 V 0,8 A MCR100G-6-x-T92-B marking a2s sot-23 sot89 scr
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V

mcr100-6 sot-23

Abstract: mcr100-6 sot mcr100-6 sot23 mcr100l-6 MCR100L MCR100-6 SCR 400 V 0,8 A MCR100-8 MCR100-8 SOT89 MCR100-6 circuit MCR100-6 AE3
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V

hsc106

Contextual Info: = 400 V Sensitive Gate Silicon Controlled Rectifier IT RMS = 4.0A FEATURES Symbol ‰ ‰ ‰ ‰ 2.Anode 3.Gate Repetitive Peak Off-State Voltage (VRM= 400V) R.M.S On-state Current (IT(RMS)=4.0A) Average On-state Current (IT(AV)=2.55A) Sensitive Gate Triggering (0.2mAMax@25℃)

Contextual Info: NYC0102BLT1G Preferred Device Product Preview Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for highly-sensitive triggering in low-power switching applications. Features http://onsemi.com 0.25 AMP, 200 VOLT SCRs

MML1225

Abstract: MXL1225
Contextual Info: DC COMPONENTS CO., LTD. MML1225 MXL1225 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices.

XL1225

Abstract: XL1225 TO-92 XL1225 equivalent ML1225 XL1225 transistor AC 050
Contextual Info: DC COMPONENTS CO., LTD. ML1225 XL1225 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices.

NTE5457

Abstract: NTE5456 NTE5452 NTE5453 NTE5454 NTE5455 NTE5458 SCR NTE5457
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be

NTE5457

Abstract: NTE5455 NTE5456 SCR NTE5457 NTE5452 NTE5458 scr 5 amp NTE5454 SCR TRIGGER PULSE circuit SCR Gate Drive
Contextual Info: NTE5452 thru NTE5458 Silicon Controlled Rectifier SCR 4 Amp Sensitive Gate Description: The NTE5452 through NTE5458 are sensitive gate 4 Amp SCR’s in a TO202 type package designed to be driven directly with IC and MOS devices. These reverse–blocking triode thyristors may be

BT169H

Abstract: SC-43A
Contextual Info: TO - 92 BT169H SCR Rev. 2 — 26 May 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 T0-92 plastic package. 1.2 Features and benefits „ High voltage capability „ Sensitive gate