SEMIX603GAR066HDS Search Results
SEMIX603GAR066HDS Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SEMiX603GAR066HDs |
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Trench IGBT Modules | Original | 1.32MB | 5 |
SEMIX603GAR066HDS Price and Stock
SEMIKRON SEMIX603GAR066HDSIgbt Module, Single, 600V, 720A; Continuous Collector Current:720A; Collector Emitter Saturation Voltage:1.45V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Semikron SEMIX603GAR066HDS |
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SEMIX603GAR066HDS | Bulk | 6 |
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SEMIX603GAR066HDS | Bulk | 1 |
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SEMIKRON SEMIX603GAR066HDS 27891134Module: IGBT; diode/transistor; buck chopper,thermistor; Ic: 600A |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX603GAR066HDS 27891134 | 1 |
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Get Quote |
SEMIX603GAR066HDS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX603GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C |
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SEMiX603GAR066HDs | |
Contextual Info: SEMiX603GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C |
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SEMiX603GAR066HDs E63532 | |
current source inverter
Abstract: M535 E63532
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SEMiX603GAR066HDs current source inverter M535 E63532 | |
C577AContextual Info: SEMiX603GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C |
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SEMiX603GAR066HDs C577A | |
Contextual Info: SEMiX603GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 720 A Tc = 80 °C 541 A 600 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX603GAR066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V |
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SEMiX603GAR066HDs SEMiX603GAR066HDs | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |