SEMIX452GB176HDS Search Results
SEMIX452GB176HDS Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SEMIX452GB176HDS |
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Trench IGBT Modules | Original | 515.78KB | 2 |
SEMIX452GB176HDS Price and Stock
SEMIKRON SEMIX452GB176HDSSEMIX; TRENCH IGBT MODULE; 1700V; 300A |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEMIX452GB176HDS | Bulk | 1 |
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SEMIX452GB176HDS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
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SEMiX452GB176HDs | |
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Contextual Info: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C |
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SEMiX452GB176HDs E63532 | |
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Contextual Info: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V |
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SEMiX452GB176HDs SEMiX452GB176HDs E63532 | |
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Contextual Info: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 437 A Tc = 80°C 310 A 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 389 A Tc = 80°C 262 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules |
Original |
SEMiX452GB176HDs | |
sinusContextual Info: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX452GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V |
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SEMiX452GB176HDs SEMiX452GB176HDs E63532 Typic11: sinus | |
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Contextual Info: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
Original |
SEMiX452GB176HDs E63532 | |
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Contextual Info: SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C |
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SEMiX452GB176HDs | |
irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |