SEMIX303GB12E4S Search Results
SEMIX303GB12E4S Price and Stock
SEMIKRON SEMIX303GB12E4SIgbt Module, Dual, 1.2Kv, 466A; Continuous Collector Current:466A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX303GB12E4S |
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SEMIKRON SEMIX303GB12E4S 27890130Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A |
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SEMIX303GB12E4S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX303GB12E4s E63532 AppliMiX303GB12E4s | |
Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX303GB12E4s E63532 | |
Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V |
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SEMiX303GB12E4s SEMiX303GB12E4s E63532 | |
semix303gb12e4sContextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V |
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SEMiX303GB12E4s SEMiX303GB12E4s E63532 | |
Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
Original |
SEMiX303GB12E4s E63532 | |
Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C |
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SEMiX303GB12E4s E63532 | |
Contextual Info: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C |
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SEMiX303GB12E4s E63532 | |
453gb12e4s
Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
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AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c | |
SEMIX353GB126V1
Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
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SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 |