SEMIKRON SK 1 Search Results

Semikron sK1 04

Abstract: Semikron sk 1/08 semikron sk1 Semikron sk 1 Semikron sk 3- 01 Semikron SK 3 G semikron SKS Semikron sK1 12 SK1G VIRT
Contextual Info: SEMIKRON SEMIKRON INC Ifrm s V rsm V rrm maximum values for continuous operation 3A | 6,7 A (sin. 180, Tref = 105 °C, L = 10 mm) 1,9 A 4,3 A Ifa v V 100 200 400 600 800 1000 1200 SK 1 G 01 Ifav SK1G SK3G " T 'C H - lS S K 3 G 01 S K 1 G 02 SK 3 G 02 SK 1 G 04

Semikron sk 20

Contextual Info: 15E D | SEMIKRON INC fll3tb?L 0001003 a | -T-z.3. o s SEMIKRON Section 10: High Voltage Rectifiers Ifav Ifav Ifn VF N Rthja Tamb Ton Tamb If = 1A =45°C =75°C = 45°C A A A V °c /w VflRM V BR VvBMS Types V V V 6000 7500 2500 H SK E 2500/1100-0,3 8000 10000 3500 H SK E 3500/1550-0,3

Semikron SK 3 G

Abstract: Semikron sk 1/08
Contextual Info: S1E D fllBbL.71 0003032 S1Û se MIKRD n SEMIKRON INC Ifrm s maximum values for continuous operation V rsm V rrm 3A | 6,7 A 1,9 A V 200 400 600 800 1000 1200 Symbol Conditions Ifav 4,3 A SK 1 G 01 S K 1 G 02 SK 1 G 04 SK 1 G 06 SK 1 G 08 SK1 G 10 SK 1 G 12 *

SN113

Contextual Info: 1SE 0 | fll3fc.b?l 00017tS 7 | SEMIKRON INC seMIKROn _ Ifrm s V rsm | V | 20 A lFAV sin.180;Tamb = 45 °C 3A 1A Types 10 A Types Cmax. Rmln. a HF Cmax. Rmln n HF 6A Types Cmax. HF Rmin. Q 100 1 N 4002 5000 1 1N 5401 10000 0,2 SK 6/01

Varistoren lebensdauer

Abstract: semikron skpt 25 semikron skpt SKPT 25 SKPT 11 SKPT25A3 SKPT Varistoren bimetall Thyristor Tabelle
Contextual Info: 14.2 SEMIKRON Impulsübertrager Typenschlüssel SK PT 27 a 10 SEMIKRON-Bauelement Pulsübertrager Gehäusegröße Übersetzungsverhältnis a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Typennummer ungefährer ∫ vdt-Wert [µVs]/100 Technische Erläuterungen

thyristor st 103

Abstract: semikron skpt SKPT 11 thyristor TRIGGER PULSE TRANSFORMER Thyristor pulse transformer semikron skpt 25 SKPT Pulse Transformers skpt 16 model of application circuit of thyristor firing bc 331
Contextual Info: 14.2 SEMIKRON Pulse Transformers Code Designation System SK PT 27 a 10 SEMIKRON component Pulse transformer Case size Radio of windings a, i 1:1 b, k 1:1:1 c 2:1 d 3:1 e 3:1:1 f 4:1 g 2:1:1 h 1:1:1:1 Type number approximate ∫ vdt value [µVs]/100 1. Introduction

single phase inverter IGBT driver

Abstract: IGBT DRIVER SEMIKRON semikron SKHI 22 semikron SKHI 21 igbt driver SKHI 23/12 semikron SKHI 26 Semidriver SKHI 61 igbt driver 3phase MOSFET INVERTER igbt sixpack
Contextual Info: 14. Accessories for Power Semiconductors 14.1 SEMIDRIVER IGBT and MOSFET Driver Circuits Type Designation System SK HI 2 2 H4 SEMIKRON component HI: Hybrid driver circuit for IGBT IC: Integrated Circuit Driver for IGBT Main Circuit 1: SINGLE Switch driver

Semikron sk 100 dal

Abstract: Semikron sk 50 dal
Contextual Info: S1E D Ô13bb71 □□0303ti 375 SEMIKRON INC s e Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, V be = - 2 V lc ICM > 1200 V SEMITRANS 3 NPN Power Darlington Modules 150 A, 1200 V 1200 V V SK 150 DB 120 D SK 150 DAL 120 D V A tp = 1 ms 300 A 150 A II

semikron SKHI 22

Abstract: semikron SKHI 21 semikron ASIC SKIC semikron SKHI 26 semikron SKIC semikron SKHI semikron SKHI 22 H4 schaltung Mosfet semikron IGBT Skhi 60
Contextual Info: 14. Zubehör für Leistungshalbleiter 14.1 SEMIDRIVERS IGBT- und MOSFET-Treiber für Module Typenschlüssel SK HI 2 2 H4 SEMIKRON-Bauelement HI = Treiberschaltung für IGBT IC = Integrierter Schaltkreis Treiber für IGBT Haupt-Schaltung 1: Einzelschalter-Treiber

Semikron SK 3 G

Contextual Info: SEMIKRON Fast Recovery Rectifier Diodes Ifrms m axim um values for continuous operation V rsm V rrm Ifav (sin. 10 A 10 A 10 A 1 8 0 ; T re f = 1 0 5 ° C , L= 10 mm; f < 1 kHz) SK3GF SK3GH SK3GL 3 ,8 A 3 ,4 A 3 ,8 A 100 SK3G F01 S K3G H 01 - 200 SK 3 GF 02

C 56 ph diode

Abstract: PH 21 DIODE ph-12 diode semikron SKa 6/20
Contextual Info: SK50GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK50GH12T4T .5'( @BVV P WR L =' Q WV SK XV L @RV L [BV P =T Q @RV SK @V _' =' Q BR SK RX L =' Q WV SK

Contextual Info: SK100GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK100GH12T4T .5'( @BVV P @BX L =' Q WV SK @VV L CVV L [BV P =T Q @RV SK @V _' =' Q BR SK @VB L =' Q WV SK

sk150da

Abstract: SK150D
Contextual Info: Öl3bt.71 0G0374fl 1Gb S1E » SEMIKRON SEMIKRON INC Maximum Ratings Conditions VcEVsus VcEV VcBO Vebo lc lc > CM I II If = II O o Ie = 0 D. C. tp = 1 ms -lc Ib Ptot Tvj Tease = 25 °C Tstg Visol Values Units 1000 V 1000 1000 7 150 300 150 8 1000 - 4 0 . . . + 150

Semikron sk 30 dal

Contextual Info: SIE D • Ö13bb71 0 0 0 3 7 0 0 ä^S « S E K G semikron^inF "— s e m ik r d n Maximum Ratings Symbol Conditions VcEVsus lc = 1 A, Vbe = —2 V ICM = II II o o m o D. C. lc If > V ebo CM I II LU CÛ VCBO > VCEV Values -lc 1200 V 1200 V 1200 v 7 V 30 A tp = 1 ms

Contextual Info: SK 60GM123  *+ ,-        Absolute Maximum Ratings Symbol Conditions IGBT ./# (0 ) *+ , $ (0 ) 1*+ , $78  1*22 . 32 4 ( ) 52 , 62 4 122 4 : *2 . (0 ) 1*+ , 12 > ( ) *+ , 32 4 ( ) 52 , 62 4 122 4 $78) *  $ SEMITOP 2

Contextual Info: SK 35 BGB 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC SEMITOP 3 Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 32 A Ts = 70 °C 25 A Ts = 25 °C 35 A Ts = 70 °C ICnom ICRM ICRM = 3 x ICnom IGBT module with single

Contextual Info: 51E 3> • Öl3bb71 0GQ37M4 SbO « S E K G SEMIKRON SEMIKRON INC Maximum Ratings VcEVsus Values Units V 1200 V II o I V VcBO CM 1200 > 1200 II LU CD lc = 1 A, V be = - 2 V VcEV m Conditions > Symbol V ebo lc = 0 7 V lc D. C. 100 A tp = 1 ms 200 A D. C. 100

Contextual Info: SK 25 GH 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 3 IGBT module ICRM = 3 x ICnom tpsc V 35 A 29 A 25 A 75 A -20 . 20 V 10 µs -40 . 175 °C

Contextual Info: SK 35 GB 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module SK 35 GB 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

Semikron sk 1

Abstract: semikron ska 6 semikron SKA 1/17 semikron SKa 6/20 Semikron sk 1/16 ska 10 ska 1 semikron ska 1/10
Contextual Info: VRSM VRRM Rectifier Diodes IFRMS maximum values for continuous operation 3A 6,7 A SK 1 SKa 1 IFAV (sin. 180; Tamb = 45 °C) 1,15 A 1,8 A V 1000 1200 1400 1600 Types Cmax. µF Rmin. Ω Types Cmax. µF Rmin. Ω SK 1/10 SK 1/12 SK 1/14 SK 1/16 500 400 300

thyristor st 103

Abstract: MCR-SL-S-1/thyristor st 103
Contextual Info: J.5E D SEMIKRON INC I fll3W,?l GÜOm'iB O I -p a s ^ V drm Itrms maximum values for continuous operation tq 110 A (Tvj V rrm 125 C) V SKFT 40/08 DS 15 20 25 1000 - 40/08 DU 40/10 DT 40/10 DU 40/12 DT 40/12 DU - 20 25 20 25 25 1200 1400 130 A 130 A 110 A

12T4

Contextual Info: SK 25 GH 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 3 IGBT module SK 25 GH 12T4 VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V

Contextual Info: SK 35 GB 12T4 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM SEMITOP 2 IGBT module ICRM = 3 x ICnom tpsc V 44 A 35 A 35 A 105 A -20 . 20 V 10 µs -40 . 175 °C

Contextual Info: SIE D • Ö13bb71 DD037S2 b37 « S E K G SEMIKRON SEMIKRON INC Maximum Ratings VcEVsus lc = 1 A ,V be = - 2 V V V V V A 300 150 8 1000 - 4 0 . . . + 150 - 4 0 . . . + 125 2500- A A A W °C °C V o II O D. C. tp = 1 ms Ib Tease —25 °C Ptot Tvj Tstg Visol