SEMICONDUTOR TECHNOLOGY Search Results

D5001ng

Abstract: D50 01ng NID5001NT4G NID5001N NID5001NT4 D5001N
Contextual Info: NID5001N Self−Protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

369A-13

Abstract: NID5001N NID5001NT4 5001N
Contextual Info: NID5001N Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while

Contextual Info: NID5001N Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

Contextual Info: NID5001N Self−Protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

5001N

Contextual Info: NID5001N Preferred Device Self-Protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

NID5001N

Abstract: NID5001NT4
Contextual Info: NID5001N Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while

Contextual Info: NID5001N Preferred Device Advance Information Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while

Contextual Info: p iC R ü N 16K LATCHED SRAM X MT5C2818 18 LATCHED SRAM 16K X 18 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 Packages 52-pin PLCC 52-pin PQFP PIN ASSIGNMENT Top View

LT 5251

Abstract: DP2 marking
Contextual Info: MT5C2818 16K X 18 L A T C H E D S R A M |U |C Z R O N 16K X 18 SRAM LATCHED SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • OPTIONS 52-Pin PLCC SC-2 52-Pin PQFP (SC-5) S =1111 SB s s m ÏÏIUJ < <lolcDI£D > > 15 < I o 5 4 3 2 Packages 52-pin PLCC

"GSM IC"

Abstract: AN1602 DCS1800 MC33169 MMSF4N01HD MRFIC0913 MRFIC0917 MRFIC1817 MRFIC1818 27dBmOutput
Contextual Info: Order this document by AN1602/D AN1602 3.6 V and 4.8 V GSM/DCS1800 Dual-Band PA Application with DECT Capability Using Standard Motorola RFIC's Prepared by: Gilles Montoriol, Christophe Fourtet, Dominique Brunel, Jean Baptiste Verdier and Jacques Trichet Wireless Subscriber Group, RF Semiconductor Division. Motorola Semiconductor S. A.

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

8D021-62198745

Abstract: 1N914 LT1308 LT1374 LT1374-SYNC LT1534I LTC1660I MBRS330T3 IR10BQ015 Semicondutor technology
Contextual Info: Linear Technology Chronicle C=>?@ABC FG May 1998 Vol. 7 No. 5 Chinese Edition Simplified @ABC 100 VOUT = 5V VIN = 10V L = 10µH 4.5A/500kHz r s t u v w x yz { | } SO-8 ~ ¡ ¢z £¤B¥¦§¨r ªª« EFFICIENCY (%) 95 90 85 80 75 LT 1374-SYNC ¬ & ­ ® ¯ ° ± ²

75t202/75T203

Abstract: 73K324L 75T202 75T202-IP 75T203 75T203-IP DTMF Receiver
Contextual Info: 75T202/203 5V Low-Power DTMF Receiver February 1998 DESCRIPTION FEATURES The 75T202 and 75T203 are complete Dual-tone Multifrequency DTMF receivers detecting a selectable group of 12 or 16 standard digits. No front-end pre-filtering is needed. The only externally

75T202-IP

Abstract: 75T202 73K324L 75T203 75T203-IP TDK TPW
Contextual Info: 75T202/203 5V Low-Power DTMF Receiver February 1998 DESCRIPTION FEATURES The 75T202 and 75T203 are complete Dual-tone Multifrequency DTMF receivers detecting a selectable group of 12 or 16 standard digits. No front-end pre-filtering is needed. tHe only externally

Contextual Info: SSI 75T202/203 5V Low-Power DTMF Receiver cé m â tà m s A TDK Group/Company October 1991 DESCRIPTION FEATURES The SSI 75T202 and 75T203 are complete Dual-Tone Multifrequency DTMF receivers detecting a se­ lectable group of 12 or 16 standard digits. No front-end

75T203-IP

Abstract: ATB12 75T202-IP
Contextual Info: SSI 75T202/203 m 5V Low-Power DTMF Receiver M M b n s A TDK Group/Company October 1991 FEATURES DESCRIPTION The S S I 75T202 and 75T203 are complete Dual-Tone Multifrequency D T M F receivers detecting a se ­ lectable group of 12 or 16 standard digits. No front-end

transistor poly3

Abstract: RR510 RR-504 RR-520 X28C256 rr520
Contextual Info: Xicor Endurance Report Xicor Endurance Report RR-520 H. A.R. Wegener INTRODUCTION This report describes endurance relating to Xicor’sproducts employing the Direct WriteTM cell. These devices display enhanced endurance cycling characteristics that are attributable to the direct write cell, process

li-ion battery SERVICE MANUAL

Abstract: battery li-ion users manual MCP1630 MCP6292 PIC12F683 CMS01 battery charger linear MCU HDR1X5
Contextual Info: MCP1630 Low-Cost Li-Ion Battery Charger User’s Guide 2005 Microchip Technology Inc. DS51555A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

HDR1X5

Abstract: DS51555 li-ion battery SERVICE MANUAL DS51555B-page NICD charger 18V datasheet DS41211 MCP1630 MCP6292 PIC12F683 li-ion battery charger schematic
Contextual Info: MCP1630 Low-Cost Li-Ion Battery Charger Reference Design User’s Guide 2005 Microchip Technology Inc. DS51555B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

CU-106A

Abstract: 0.4mm pitch BGA IPC-6012A beagleboard 0.4mm pitch BGA routing IPC-6012 IPC-D-317 NAND FLASH LGA reflow profile CU-106A shelf life CBB Capacitor Selection Guide
Contextual Info: Application Report SPRAAV1B – May 2009 PCB Design Guidelines for 0.4mm Package-On-Package PoP Packages, Part I Keith Gutierrez and Gerald Coley . ABSTRACT

Contextual Info: MT5C2818 16K X 18 LATCHED SRAM MICRON I KWCOWWCTW MC LATCHED SRAM 16K x 18 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • • • • • • • • • Fast access times: 1 5 ,2 0 and 25ns Fast Output Enable: 6, 8 and 10ns Single +5V ±10% power supply

TTE24C256

Abstract: TTE24C
Contextual Info: 256K-bit 2-Wire Serial CMOS EEPROM TTE24C256 Preliminary Description The TTE24C256 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C256 contains a memory array of 256K-bits 32,768 x 8 , and is further subdivided into 512 pages of 64 bytes each

TTE24C

Contextual Info: 64K-bit/32K-bit 2-Wire Serial CMOS EEPROM TTE24C32/TTE24C64 Preliminary Description The TTE24C32/TTE24C64 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C32/TTE24C64 contains a memory array of 32K-bits 4Kx8 and 64K-bits (8Kx8) repectively, and

TTE24C

Contextual Info: 8-bit 2-Wire Serial CMOS EEPROM TTE24C08A Preliminary Description The TTE24C08A is an extended temperature operational range electrically erasable PROM device that uses the standard 2-wire interface for communications. The TTE24C08A contains a memory array of 8-bits 1,024 x 8 , and is further