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    SEMICONDUCTOR KHB9D5N20F Search Results

    SEMICONDUCTOR KHB9D5N20F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3
    		Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Datasheet
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK422G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK424G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Datasheet
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Datasheet

    SEMICONDUCTOR KHB9D5N20F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    semiconductor 9d5n20f

    Abstract: 9d5n20f khb 9d5n20f KHB9D5N20F 9D5N20 semiconductor KHB9d5n20f TO-220IS 15Item
    Contextual Info: SEMICONDUCTOR KHB9D5N20F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 9D5N20F 515 No. 2005. 11. 15 2 Item Marking Description Device Name KHB9D5N20F KHB9D5N20F Lot No. 515 Revision No : 1 5 Year 0~9 : 2000~2009 15


    Original     		KHB9D5N20F O-220IS 9D5N20F semiconductor 9d5n20f 9d5n20f khb 9d5n20f KHB9D5N20F 9D5N20 semiconductor KHB9d5n20f TO-220IS 15Item PDF

    9d5n20f

    Abstract: khb 9d5n20f semiconductor 9d5n20f 9D5N20 KHB9D5N20F2 KHB9D5N20F TO-220IS laser marking
    Contextual Info: SEMICONDUCTOR KHB9D5N20F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 9D5N20F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB9D5N20F2 KHB9D5N20F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009


    Original     		KHB9D5N20F2 O-220IS 9D5N20F 9d5n20f khb 9d5n20f semiconductor 9d5n20f 9D5N20 KHB9D5N20F2 KHB9D5N20F TO-220IS laser marking PDF

    khb9D5N20P

    Abstract: semiconductor KHB9d5n20f KHB9D5N20F khb*9D5N20P
    Contextual Info: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB9D5N20P/F/F2 KHB9D5N20P KHB9D5N20F KHB9D5N20F KHB9D5N20F2 khb9D5N20P semiconductor KHB9d5n20f khb*9D5N20P PDF

    khb*9D5N20P

    Abstract: KHB9D5N20P1 KHB9D5N20F1 khb9D5N20P KHB9D5N20F2 KHB9D5N20F D 92 M - 02 DIODE
    Contextual Info: SEMICONDUCTOR KHB9D5N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB9D5N20P1/F1/F2 KHB9D5N20P1 Fig15. Fig16. Fig17. khb*9D5N20P KHB9D5N20P1 KHB9D5N20F1 khb9D5N20P KHB9D5N20F2 KHB9D5N20F D 92 M - 02 DIODE PDF

    KHB9D5N20F

    Abstract: khb*9D5N20P
    Contextual Info: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB9D5N20P/F/F2 KHB9D5N20P Fig15. Fig16. Fig17. KHB9D5N20F khb*9D5N20P PDF

    khb*9D5N20P

    Abstract: KHB9D5N20F khb9D5N20P KHB9D5N20F2
    Contextual Info: SEMICONDUCTOR KHB9D5N20P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D5N20P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		KHB9D5N20P/F/F2 KHB9D5N20P Fig15. Fig16. Fig17. khb*9D5N20P KHB9D5N20F khb9D5N20P KHB9D5N20F2 PDF