SEMICONDUCTOR CIRCUITS INC Search Results

Contextual Info: SEMICONDUCTOR CIRCUITS, INC. Company Profile Semiconductor Circuits, Inc. started as a privately held company in 1966. Since inception the company has designed and manufactured AC to DC and DC to DC power converters for the OEM electronics industry. Semiconductor Circuits

Contextual Info: SEMICONDUCTOR CIRCUITS, INC. Company Profile Semiconductor Circuits, Inc. started as a privately held company in 1966. Since inception the company has designed and manufactured AC to DC and DC to DC power converters for the OEM electronics industry. Semiconductor Circuits

Selection guide

Abstract: United Detector Technology PSD
Contextual Info: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable

LBA716

Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division

103PPS302KG

Abstract: 17x46
Contextual Info: Metallized Polypropylene Film Capacitors for Power Semiconductor Circuits PPS • Snubber Capacitor for Energy Conversion • Induction Heaters in Power Semiconductor Circuits. • High Current • High Voltage • High Pulse Current Applications • SMPS

AN-31

Abstract: Op Amp Circuit Collection Reference Vishay Ultronix Grand Junction CO Q81 Q81, 1K, 3500 ppm "multiple aperture Window Discriminator" noise detector using instrumentation amplifier CO Q81 zero crossing detector in rectifier circuit Vishay Q81
Contextual Info: National Semiconductor Application Note 31 September 2002 Note: National Semiconductor recommends replacing 2N2920 and 2N3728 matched pairs with LM394 in all application circuits. Section 1—Basic Circuits Inverting Amplifier Non-Inverting Amplifier Op Amp Circuit Collection

104PPA302K

Abstract: 224PPA302KS 105PPA202K 32X5 induction heater 103PPA302K
Contextual Info: Polypropylene Film Capacitors for Power Semiconductor Circuits PPA • Snubber Capacitor for Energy Conversion • High Voltage in Power semiconductor Circuits • High current • SMPS • High Pulse Current Applications • Induction heaters Operating Temperature

SCR 320 Snubber Capacitor

Abstract: 104PPB630K film capacitor 0.47 1200 102PPB202KE capacitor 0,068 650 vac Capacitor 0.0047 uF
Contextual Info: Polypropylene Film Capacitors for Power Semiconductor Circuits PPB • Snubber Capacitor for Energy Conversion • Power Semiconductor Circuits • SCR Communication • TV Deflection ckts. • High Voltage • High Current • High Pulse Current Applications

M54519P

Abstract: M54519FP IC M54519P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current

Contextual Info: PMB/ RMB Polypropylene Film Capacitors for Power Semiconductor Circuits APPLICATION • Energy Conversion ■ Power Semiconductor Circuits ■ Snubber ■ IGBT Modules FEATURES ■ Multiple Lead Styles ■ High Pulse ■ High Current ■ High Voltage SPECIFICATIONS

18P4G

Abstract: 20P2N-A M54513FP M54513P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with

M54577P

Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54577P 7-UNIT 30mA TRANSISTOR ARRAY DESCRIPTION M54577P is seven-circuit transistor arrays. The circuits are made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

IXEP1400

Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

Seven Transistor Array PNP

Abstract: pnp DARLINGTON TRANSISTOR ARRAY pnp darlington array pnp 8 transistor array M54561P PNP DARLINGTON ARRAYS darlington Mitsubishi npn tr array npn 8 transistor array NPN darlington array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54561P 7-UNIT 300mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54561P is seven-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform

M54526P

Abstract: M54526FP
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54526P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54526P and M54526FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

M54522P

Abstract: M54522P equivalent M54522FP 18P4G 20P2N-A npn 8 transistor array common collector npn array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54522P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54522P and M54522FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

M54539P

Abstract: M54539
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54539P 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54539P six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.

M54523FP

Abstract: M54523P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54523P/FP 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE DESCRIPTION M54523P and M54523FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

npn power transistor ic 400ma

Abstract: M54530FP M54530P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54530P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54530P and M54530FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

M54585P

Abstract: M54585FP common collector npn array 18P4G 20P2N-A npn 8 transistor array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54585P/FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

M54531FP

Abstract: M54531P
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54531P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54531P and M54531FP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits

LATTICE 3000 family

Abstract: e2cmos technology lattice 22v10 programming GAL20V8 GAL22V10 GAL16V8 GAL20RA10 LATTICE 3000 family architecture
Contextual Info: Lattice Overview among other segments, standard logic, custom-designed application specific integrated circuits ASICs, which include conventional gate-arrays, standard cells and full custom logic circuits , and PLDs. General Lattice Semiconductor Corporation designs, develops

M54514AFP

Abstract: M54514AP 6 "transistor arrays" ic npn tr array
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54514AP/AFP 7-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54514AP and M54514AFP are seven-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

M54534P

Abstract: M54534FP M54534
Contextual Info: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54534P/FP 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE DESCRIPTION M54534P and M54534FP are six-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with