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    SEE TECH Search Results

    SEE TECH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10161239-101
    Amphenol Communications Solutions The FCI Basics crimping hand tool is professionally designed for applications in the prototyping phase or small production quantities. The hand tool is designed for Amphenols Minitek Board-In 2.00/2.50mm Crimp-to-Wire product. Click on the Product Drawing to see all information related to the product. PDF
    10162308-001
    Amphenol Communications Solutions The FCI Basics crimping hand tool is professionally designed for applications in the prototyping phase or small production quantities.The hand tool is designed for Amphenols PV® Crimp-to-Wire product.Click on the Product Drawing to see all information related to the product. PDF
    10161239-001
    Amphenol Communications Solutions The FCI Basics crimping hand tool is professionally designed for applications in the prototyping phase or small production quantities. The hand tool is designed for Amphenols Minitek Board-In 2.00/2.50mm Crimp-to-Wire product. Click on the Product Drawing to see all information related to the product. PDF
    10159164-001
    Amphenol Communications Solutions The FCI Basics crimping hand tool is professionally designed for applications in the prototyping phase or small production quantities. The hand tool is designed for Amphenols WireLock® 1.80mm Crimp-to-Wire product. Click on the Product Drawing to see all information related to the product. PDF
    10156148-001
    Amphenol Communications Solutions The FCI Basics crimping hand tool is professionally designed for applications in the prototyping phase or small production quantities. The hand tool is designed for Amphenols Cross-Mate™ Crimp-to-Wire product. Click on the Product Drawing to see all information related to the product. PDF

    SEE TECH Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


    OCR Scan
    mjw16212/dmjf18002mje18002mjf18004+6mje18004mjf18006mje18006mjf18008mje18008mjw16212 PDF

    BS170 MOTOROLA

    Abstract: MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006
    Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


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    mjw16212/dmjf18002mje18002mjf18004+9mje18004mjf18006mje18006mjf18008mje18008mjw16212bs170 motorolamc1391pmj11016 PDF

    EQUIVALENT FOR mjf18004

    Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
    Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors


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    mjw16212/dmjf18002mje18002mjf18004+10mje18004mjf18006mje18006mjf18008mje18008mjw16212equivalent for mjf18004motorola mjw16212mc1391pmj11016 PDF

    Contextual Info: PD - 91839A REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57260SE MOSFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.043Ω International Rectifier’s (SEE) RAD HARD technology MOSFETs demonstrate immunity to SEE failure.


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    1839airhna57260se200volt PDF

    8a 905 surface mount transistor

    Abstract: IRHNB7460SE n-Channel mosfet 400v
    Contextual Info: PD - 91741 REPETITIVE AVALANCHE AND dv/dt RATED IRHNB7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.


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    irhnb7460se500volt8a 905 surface mount transistorn-channel mosfet 400v PDF

    IRHNA7360SE

    Contextual Info: PD - 91398 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA7360SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.


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    irhna7360se400volt PDF

    IRHNA7460SE

    Contextual Info: PD - 91399 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.


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    irhna7460se500volt PDF

    pcb 200W audio amplifier

    Abstract: IRHNB7264SE
    Contextual Info: PD-91738 IRHNB7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 250Volt, 0.11W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. No


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    pd-91738irhnb7264se250voltpcb 200w audio amplifier PDF

    IRHNB7360SE

    Abstract: AVALANCHE TRANSISTOR 24-A
    Contextual Info: PD - 91740 REPETITIVE AVALANCHE AND dv/dt RATED IRHNB7360SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.


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    irhnb7360se400voltavalanche transistor24-a PDF

    transistor rc 3866

    Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors MJW16212* The MJW16212 is a state–of–the–art SWITCHMODE bipolar power transistor. It


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    mjf18002mje18002mjf18004mje18004+16mjf18006mje18006mjw16212tip73btip74tip74atransistor rc 3866t 3866 to220 power transistort 3866 transistor equivalent transistorequivalent for mjf18004bs170 replacementeia/transistor rc 3866pin configuration transistor bd140transistor replacement table for transistortransistor cross referencebu108 PDF

    IRHM7250SE

    Contextual Info: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 200Volt, 0.10W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


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    pd-91779irhm7250se200voltrectifi10 PDF

    IRHI7460SE

    Contextual Info: Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED IRHI7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500 Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE


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    irhi7460se PDF

    IRHNA7264SE

    Contextual Info: Provisional Data Sheet No. PD-9.1432 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET IRHNA7264SE TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 250Volt, 0.110Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.


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    irhna7264se250volt PDF

    IRH7250SE

    Abstract: TC Bias
    Contextual Info: PD - 91778 IRH7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 200Volt, 0.10W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


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    irh7250se200voltrectif10tc bias PDF

    transistor gt 322

    Contextual Info: PD - 91863 IRHF7430SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , SEE RAD HARD HEXFET 500Volt, 1.92Ω International Rectifier’s SEE RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


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    irhf7430se500volttransistor gt 322 PDF

    IRH7450SE

    Contextual Info: PD - 91390A IRH7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


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    1390airh7450se500voltrectifie10 PDF

    IRHM2C50SE

    Abstract: IRHM7C50SE
    Contextual Info: PD - 91252A IRHM2C50SE IRHM7C50SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 600Volt, 0.6Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


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    1252airhm2c50seirhm7c50se600volt+1internat10 PDF

    Contextual Info: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.10Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


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    pd-91779irhm7250se200volt PDF

    IRHN7250SE

    Abstract: mosfet 400a 200V
    Contextual Info: PD - 91780A IRHN7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.10Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


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    1780airhn7250se200voltrectifi10+1mosfet 400a 200v PDF

    IRHM7460SE

    Contextual Info: PD - 91394D IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test


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    91394dirhm7460se500volt PDF

    IRHM7360SE

    Contextual Info: PD - 91224C IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test


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    91224cirhm7360se400volt PDF

    IRHM7450SE

    Abstract: aval
    Contextual Info: PD - 91223C IRHM7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


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    91223cirhm7450se500voltrectifi10+1aval PDF

    Contextual Info: PD - 91252A IRHM2C50SE IRHM7C50SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 600Volt, 0.6Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


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    1252airhm2c50seirhm7c50se600volt+1utiliz310 PDF

    IRHM7264SE

    Contextual Info: PD - 91393D IRHM7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 250Volt, 0.11Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test


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    91393dirhm7264se250volt PDF