SEE TECH Search Results
SEE TECH Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 10161239-101 | Amphenol Communications Solutions | The FCI Basics crimping hand tool is professionally designed for applications in the prototyping phase or small production quantities. The hand tool is designed for Amphenols Minitek Board-In 2.00/2.50mm Crimp-to-Wire product. Click on the Product Drawing to see all information related to the product. | |||
| 10162308-001 | Amphenol Communications Solutions | The FCI Basics crimping hand tool is professionally designed for applications in the prototyping phase or small production quantities.The hand tool is designed for Amphenols PV® Crimp-to-Wire product.Click on the Product Drawing to see all information related to the product. | |||
| 10161239-001 | Amphenol Communications Solutions | The FCI Basics crimping hand tool is professionally designed for applications in the prototyping phase or small production quantities. The hand tool is designed for Amphenols Minitek Board-In 2.00/2.50mm Crimp-to-Wire product. Click on the Product Drawing to see all information related to the product. | |||
| 10159164-001 | Amphenol Communications Solutions | The FCI Basics crimping hand tool is professionally designed for applications in the prototyping phase or small production quantities. The hand tool is designed for Amphenols WireLock® 1.80mm Crimp-to-Wire product. Click on the Product Drawing to see all information related to the product. | |||
| 10156148-001 | Amphenol Communications Solutions | The FCI Basics crimping hand tool is professionally designed for applications in the prototyping phase or small production quantities. The hand tool is designed for Amphenols Cross-Mate™ Crimp-to-Wire product. Click on the Product Drawing to see all information related to the product. |
SEE TECH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors |
OCR Scan |
mjw16212/dmjf18002mje18002mjf18004+6 | |
BS170 MOTOROLA
Abstract: MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004 MJF18006
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mjw16212/dmjf18002mje18002mjf18004+9 | |
EQUIVALENT FOR mjf18004
Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
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mjw16212/dmjf18002mje18002mjf18004+10 | |
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Contextual Info: PD - 91839A REPETITIVE AVALANCHE AND dv/dt RATED IRHNA57260SE MOSFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.043Ω International Rectifier’s (SEE) RAD HARD technology MOSFETs demonstrate immunity to SEE failure. |
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1839airhna57260se200volt | |
8a 905 surface mount transistor
Abstract: IRHNB7460SE n-Channel mosfet 400v
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irhnb7460se500volt8a 905 surface mount transistorn-channel mosfet 400v | |
IRHNA7360SEContextual Info: PD - 91398 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA7360SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. |
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irhna7360se400volt | |
IRHNA7460SEContextual Info: PD - 91399 REPETITIVE AVALANCHE AND dv/dt RATED IRHNA7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. |
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irhna7460se500volt | |
pcb 200W audio amplifier
Abstract: IRHNB7264SE
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pd-91738irhnb7264se250voltpcb 200w audio amplifier | |
IRHNB7360SE
Abstract: AVALANCHE TRANSISTOR 24-A
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irhnb7360se400voltavalanche transistor24-a | |
transistor rc 3866
Abstract: t 3866 to220 power transistor t 3866 transistor equivalent transistor EQUIVALENT FOR mjf18004 bs170 replacement EIA/transistor rc 3866 pin configuration transistor bd140 TRANSISTOR REPLACEMENT table for transistor transistor cross reference BU108
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mjf18002mje18002mjf18004mje18004+16 | |
IRHM7250SEContextual Info: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD W , (SEE) RAD HARD HEXFET 200Volt, 0.10W International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation |
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pd-91779irhm7250se200voltrectifi10 | |
IRHI7460SEContextual Info: Provisional Data Sheet No. PD-9.1224A REPETITIVE AVALANCHE AND dv/dt RATED IRHI7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500 Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE |
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irhi7460se | |
IRHNA7264SEContextual Info: Provisional Data Sheet No. PD-9.1432 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET IRHNA7264SE TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 250Volt, 0.110Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. |
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irhna7264se250volt | |
IRH7250SE
Abstract: TC Bias
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irh7250se200voltrectif10tc bias | |
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transistor gt 322Contextual Info: PD - 91863 IRHF7430SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , SEE RAD HARD HEXFET 500Volt, 1.92Ω International Rectifier’s SEE RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation |
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irhf7430se500volttransistor gt 322 | |
IRH7450SEContextual Info: PD - 91390A IRH7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation |
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1390airh7450se500voltrectifie10 | |
IRHM2C50SE
Abstract: IRHM7C50SE
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1252airhm2c50seirhm7c50se600volt+1 | |
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Contextual Info: PD-91779 IRHM7250SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 200Volt, 0.10Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation |
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pd-91779irhm7250se200volt | |
IRHN7250SE
Abstract: mosfet 400a 200V
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1780airhn7250se200voltrectifi10+1 | |
IRHM7460SEContextual Info: PD - 91394D IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test |
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91394dirhm7460se500volt | |
IRHM7360SEContextual Info: PD - 91224C IRHM7360SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 400Volt, 0.20Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test |
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91224cirhm7360se400volt | |
IRHM7450SE
Abstract: aval
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91223cirhm7450se500voltrectifi10+1 | |
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Contextual Info: PD - 91252A IRHM2C50SE IRHM7C50SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 600Volt, 0.6Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation |
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1252airhm2c50seirhm7c50se600volt+1 | |
IRHM7264SEContextual Info: PD - 91393D IRHM7264SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 250Volt, 0.11Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test |
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91393dirhm7264se250volt | |