WT18-3
Abstract: 3P111 P111 P411 Sensick Sensors wt 100 wl18
Contextual Info: KD01_W18_3_en.qxd 13.07.2006 15:57 Uhr Seite 740 W18-3 Photoelectric switches Photoelectric proximity switches, BGS Photoelectric reflex switches Through-beam photoelectric switches W18-3: Incorporated application know-how, expanded functionality, high level of
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W18-3
W18-3:
WT18-3
WL18-3,
WT18-3P111
WT18-3P411
3P111
P111
P411
Sensick Sensors wt 100
wl18
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1N5806
Abstract: 5806 microsemi
Contextual Info: Microsemi Corp. j SANTA A N A . CA F o r m o re i n f o r m a ti o n call: 714 9 7 9 -8 2 2 0 1N5802 thru 1N5806 i<t¿ ^ — y The diode experts V ÏJ A N S Î FEATURES ULTRA FAST MILITARY RECTIFIERS • M ICRO M INIATURE PACKAGE • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE
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1N5802
1N5806
MIL-S-19500/477
1N5806
5806 microsemi
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EUPEC DD 31 N 1200 k
Abstract: DD 31 N 800 K IEC749
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information DD 540 N M10 screwing depth max. 18,0 31 50 44 25 25 100 112 124 6 A 144 K AK VWK February 1996 DD 540 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values
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surg40
DD540N7
EUPEC DD 31 N 1200 k
DD 31 N 800 K
IEC749
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SBS4004T
Abstract: ECE switch SBP4104T KNITTER SBP-4108 SBS40 slide switch ece SH008 SBS4008T SH012
Contextual Info: SWITCHES DUAL IN-LINE, Surface Mount EXCEL type EHS half pitch A range of low profile, half pitch (1.27mm) surface mount DIL switches offering a choice of poles. Gold plated SPST contacts are designed to ensure stable operation and are housed in black moulded bodies, flame retardant to UL94V-0. The range is taped sealed to withstand reflow
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UL94V-0.
SBS4007
SBS4008
SBS4009
SBS4010
SBS4012
SBS4002T
SBS4003T
SBS4004T
SBS4005T
SBS4004T
ECE switch
SBP4104T
KNITTER
SBP-4108
SBS40
slide switch ece
SH008
SBS4008T
SH012
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Contextual Info: rru n m LT1634-1.25 TECHNOLOGY Micropower Precision Shunt Voltage Reference F€ATUR€S DCSCRIPTIOH • initial Voltage Accuracy: 0.05% ■ Low Operating Current: 10 mA ■ Low Drift: 25ppm/°C Max The LT 1634 is a micropower, precision, shunt voltage reference. The bandgap reference uses trimmed preci
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LT1634-1
25ppm/Â
LT1634
LT1460
LT1495
LTC1540
10ppm/Â
600nA
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D7877
Abstract: ZOV131
Contextual Info: 25mm Dual —Square Configuration Recognitions To Safety Agency Standards Maida Style Number B c S66 S66 S66 S66 S66 S66 S66 S66 S66 S66 S66 S66 S66 S66 S66 S66 S66 S66 S66 ZOV131RA180 ZOV141RA190 ZOV151RA200 ZOV181RA250 ZOV231RA290 ZOV251RA310 ZOV271RA330
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ZOV131RA180
ZOV141RA190
ZOV151RA200
ZOV181RA250
ZOV231RA290
ZOV251RA310
ZOV271RA330
ZOV301RA350
ZOV321RA360
ZOV391RA380
D7877
ZOV131
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e430g
Abstract: 15101GOA 15102GOA 15105GOA
Contextual Info: COORS C O MP ON E N T S INC 02 2 4 3 0 0 0 6 COORS COMPONENTS IN C DE 1 E4BD0Db □□□□lûl Series 1S1 Silicon Controlled Rectifiers 235 A m p s RMS, VDRM A N D VRRM Up To 600 Volts - 820 • ■ ■ ■ 00181 D T - 2 , s r- /? ' ' -
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in753 zener diode
Abstract: LN741 IN753 IN751 IN757 IN4372 IN756 in753 zener MICROSEMI 1N746A JANTX IN437
Contextual Info: 5^0? 9 9 9 = = C />2V Il o o o o in o ^ 0 9 0 e CM CM CM 0 0 9 0 0 0 o o d d q1o o rs in 00 no co o o o «005 O'.S OCM cm a> rs q o ° o o o • -i in n i CM CM CM 000 000 000 ro & o co ro co CO I s H là o o o o 9 ID Csl 00 i n CVJ r -f in d d N C Ô o i O CM
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1N717
1N718
1N719
DO-7/DO-35
1N721
1N722
1N723
1N725
1N726
1N727
in753 zener diode
LN741
IN753
IN751
IN757
IN4372
IN756
in753 zener
MICROSEMI 1N746A JANTX
IN437
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Contextual Info: tía Pulse Electronics NOTES: UNLESS OTHERWISE SPECIFIED 1 . NOTICE: RoHS v/ 2 . 3. 4. THIS IS A RoHS COMPLIANT AND HALOGEN FREE COMPONENT/PRODUCT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. SOLDERABILITY: CONFORMS TO A N S I/ J -S T D -0 0 2 ,
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HX5020FNL
PS-2749
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2N3819 equivalent
Abstract: 2N3819 equivalent for 2N3819 2n3819 equivalent ic J-FET 2N3819
Contextual Info: Tem ic Silicon!» _ 2N3819 N-Channel JFETs Product Summary V BR GSS M in (V) < -8 -2 5 l o s s M in (mA) .J:, gfs M in (m S) 2 2 Features Benefits Applications • • W ideband H igh G ain • H ig h -F req u en cy A m plifier/M ixer
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2N3819
2N3819
P-37407--Rev.
2N3819 equivalent
equivalent for 2N3819
2n3819 equivalent ic
J-FET 2N3819
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AX2090
Abstract: AX2090-BW51-1000 AX2090-BW50-0600 AX5125 AX2090-BW51-3000 AX5021 "Temperature Switch" AX5118 AX2090-BW50-0300 AX-50
Contextual Info: BECKHOFF Drive Technology External Brake Resistor AX2090-BW5x-xxxx Technical Documentation Version: Date: Language: Article no.: 1.0 11.9.2009 EN TDenAX-2090-BW5x-0400 Beckhoff Automation GmbH Eiserstr. 5 33415 Verl Germany Phone: Fax: e-mail: Internet: +49 0 5246/963-0
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AX2090-BW5x-xxxx
TDenAX-2090-BW5x-0400
AX2090
AX2090-BW51-1000
AX2090-BW50-0600
AX5125
AX2090-BW51-3000
AX5021
"Temperature Switch"
AX5118
AX2090-BW50-0300
AX-50
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EUPEC DD 600 N K
Abstract: DD350N
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 350 N 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998 DD 350 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische Spitzensperrspannung
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1100ansienten
DD350N7
EUPEC DD 600 N K
DD350N
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ADSP1081
Abstract: 8 bit cmos multiplier ADSP1081ATD
Contextual Info: ANALOG DEVICES 8 x 8-Bit CMOS Multiplier ADSP-1081A 1.1 Scope. This specification covers the detail requirements for a monolithic CMOS 8 x 8-bit digital multiplier integrated circuit, unsigned magnitude data format. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:
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ADSP-1081A
ADSP-1081ASD/883B
ADSP-1081ATD/883B
ADI-M-1000:
D-40A.
ADSP1081
8 bit cmos multiplier
ADSP1081ATD
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AX5021
Abstract: AX2090-BW50-1600 AX2090-BW51-1000 servomoteur AX5125 AX209 AX2090-BW50-0600 AX5118 2090-BW50-0300
Contextual Info: BECKHOFF Drive Technology Résistance de freinage externe AX2090-BW5x-xxxx Documentation technique Version : Date : Langue : N° d'article : 1.0 01.9.2009 FR TDfrAX-2090-BW5x-0400 Beckhoff Automation GmbH Eiserstr. 5 33415 Verl Allemagne Téléphone : Télécopie :
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AX2090-BW5x-xxxx
TDfrAX-2090-BW5x-0400
AX5021
AX2090-BW50-1600
AX2090-BW51-1000
servomoteur
AX5125
AX209
AX2090-BW50-0600
AX5118
2090-BW50-0300
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512m pc133 SDRAM DIMM
Abstract: nec 2405 PC133 registered reference design
Contextual Info: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133SDRAM E0021H20 (Ver. 2.0) Aug. 20, 2001 (K) Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed
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HB52F649E1-75B
64-Mword
72-bit,
PC133SDRAM
E0021H20
HB52F649E1
256-Mbit
HM5225405BTT)
512m pc133 SDRAM DIMM
nec 2405
PC133 registered reference design
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ge c180
Abstract: ge c180p General electric c180pc GE C180C t437 C180E TRF 840 C180B C180C C180M
Contextual Info: Hi£h.Power Silicon — cm— I I 1- 1 Controlled Rectifier 1 3 0 0 V o lts 2 3 5 A R M S a m p l if y in g g a t Eì ^ I The General Electric Cl 80 Silicon Controlled Rectifier is designed for phase control applications. This is an all-diffused Pic-Pac device, employing the
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C180B
ge c180
ge c180p
General electric c180pc
GE C180C
t437
C180E
TRF 840
C180B
C180C
C180M
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BS6724
Abstract: BS4066 BS5467 BSEN50265-2-1 BSEN50267-2-1 BSEN50267-2-3 BS546
Contextual Info: AFUMEX POWER CABLES LOW VOLTAGE 600/1000 V Afumex 90 Armoured Power Cables BS6724 CABLE CHARACTERISTICS TEMPERATURE RANGE -25 to +90 °C Bending radius Circular conductor r=6D Shaped conductor r=8D Mechanical impact Very good Fire performance BSEN50265-2-1
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BS6724
BSEN50265-2-1
BS4066-3
BS7622
BSEN50267-2-1
BSEN50267-2-3
ERA69-30
BS5467
BS6724/01/05
BS6724
BS4066
BSEN50265-2-1
BSEN50267-2-1
BSEN50267-2-3
BS546
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gentech 301
Abstract: daewon electronics Crystal Semiconductors unitronics PQ 2720
Contextual Info: International Sales Representatives and Distributors Micrel Semiconductor sales indicated by [Micrel]. Synergy Semiconductor sales indicated by [Synergy]. 6029 103rd St. Edmonton, AB T6H 2H3 NORTH AMERICA—DIE DISTRIBUTION ONLY CANADA—BRITISH COLUMBIA Chip Supply, Inc. [Micrel]
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103rd
Electr1702
gentech 301
daewon electronics
Crystal Semiconductors
unitronics
PQ 2720
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512m pc133 SDRAM DIMM
Abstract: PC133 registered reference design Hitachi DSA00174 pc133 SDRAM DIMM package Nippon capacitors
Contextual Info: HB52RF649E1U-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133 SDRAM ADE-203-1193A (Z) Preliminary Rev. 0.1 Oct. 6, 2000 Description The HB52RF649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been
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HB52RF649E1U-75B
64-Mword
72-bit,
PC133
ADE-203-1193A
HB52RF649E1U
256-Mbit
HM5225405BTB)
512m pc133 SDRAM DIMM
PC133 registered reference design
Hitachi DSA00174
pc133 SDRAM DIMM package
Nippon capacitors
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GE A390C Rectifier Diode
Abstract: 1N4044-56 general electric a390e pic 817 1N3735 1N4045 A190 A190A A197 A197A
Contextual Info: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 « 900 600 700 !j 6 0 0 § 500 s 400 5 300 § 200 z H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELECTOR GUIDE 30 00
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1N3735-44
1N4044-56
IN4044-56R
GE A390C Rectifier Diode
general electric a390e
pic 817
1N3735
1N4045
A190
A190A
A197
A197A
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sine wave inverter pic
Abstract: SCR C185N c180 scr pic sine inverter C185N SCR C185N 12 volt dc to 220 volt ac inverter 1000 watts C185S RS-397 C185
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 9 0 0 1000 1150 1500
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NEC AC03D
Abstract: AC03 nec TRIAC AC03 NEC AC03F 7504b SC-7504B triac ac03d nec AC03 AC03F ac03d
Contextual Info: - f — S 7 • 5/— h NEC r Ì Ì T / \ fZ AC03DJM, AC03DJM-Z AC03FJ M , AC03FJ M -Z 3 A "E— AC03r jJM , AC03r jJM ~Zi± , TRIAC > « ? Îl 3 A K T R IA C t \ ^ O ü L t °- ^ ^ 7 * J ± i ± 400 V, 600 V -üto #Ît o/n^-7'U .y K IC lc ftM & ffiÿ tifê H AC03r
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rAC03DJM,
AC03DJM-Z
AC03FJ
AC03r
ul94v-o)
AC03DJM,
NEC AC03D
AC03 nec
TRIAC AC03
NEC AC03F
7504b
SC-7504B
triac ac03d nec
AC03
AC03F
ac03d
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MIC426CN
Abstract: tl494 equivalent tsc170 MIC427CM mic427cn TL494 MIC426BM mic4428 mic4426bn MIC1428CN
Contextual Info: MIC4426/4427/4428 Dual 1.5A-Peak Low-Side MOSFET Driver General Description Features The MIC4426/4427/4428 family are highly-reliable dual lowside MOSFET drivers fabricated on a BiCMOS/DMOS pro cess for low power consumption and high efficiency. These drivers translate TTL or CMOS input logic levels to output
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MIC4426/4427/4428
MIC4426/4427/4428
MIC4426/7/8
MIC426/427/428
MIC1426/1427/1428
TL494,
SG1526/7,
MIC38C42,
MIC426CN
tl494 equivalent
tsc170
MIC427CM
mic427cn
TL494
MIC426BM
mic4428
mic4426bn
MIC1428CN
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C180NX500
Abstract: C180EX500 C180BX500 C180CX500 C180DX500 C180MX500 C180SX500 C180X500 C180AX
Contextual Info: High Power Silicon Controlled Rectifier 800 Volts 300ARMS I C180X500 AMPLIFYING GATE The General Electric C l 80X 500 Silicon Controlled Rectifier is specifically designed for low voltage phase control applications; e.g., welding, battery charging, plating supplies, etc. The SCR has very low power dissipation,
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300ARMS
C180X500
80X500
C180NX500
C180EX500
C180BX500
C180CX500
C180DX500
C180MX500
C180SX500
C180X500
C180AX
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