SDRAM DIMM 1997 Search Results

pc100-322-620

Abstract: SDA Physical Layer Specification Version 3.00 1MX16 2MX32 4MX16 SO DIMM DRAM 144 Pin Connector Pinout BA1A11
Contextual Info: PC SDRAM Unbuffered DIMM Specification PC SDRAM UNBUFFERED DIMM SPECIFICATION REVISION 0.9 Oct. 22, 1997 1 of 46 Revision 0.9 PC SDRAM Unbuffered DIMM Specification THIS DOCUMENT IS PROVIDED "AS IS" WITH NO WARRANTIES WHATSOEVER, INCLUDING ANY WARRANTY OF MERCHANTABILITY, FITNESS FOR ANY

SO DIMM DRAM 144 Pin Connector Pinout

Abstract: SO DIMM 100 Pin Connector Pinout CB15 BA142
Contextual Info: cts. a h IC M A R D S rd fe u b U in P 8 6 1 168 Pin Unbuffered SDRAM DIMM Characteristics Basic Architecture SDRAM Addressing Effects The IBM 168 pin 8 Byte Unbuffered SDRAM DIMM is intended for personal computers and workstations using eight byte memory interfaces. These systems

Contextual Info: ADVANCE 2, 4 MEG X 64 SDRAM DIMMs MICRON I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT8LSD T 264A MT16LSD(T)464A FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Utilizes 83 and 100 MHz SDRAM components

Contextual Info: ADVANCE 2, 4 MEG X 72 SDRAM DIMMs MICRON I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT18LSD(T)472A FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JED EC-standard 168-pin, dual in-line m em ory module (DIMM) • Utilizes 83 and 100 M H z SDRAM com ponents

Contextual Info: MOSEL VITELIC V437216S04VTG 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100AND 100 M HZ SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: MOSEL VITELIC PRELIMINARY V436416S04VTG 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100AND 100 M HZ SDRAM UNBUFFERED DIMM Features Description • 168 Pin Unbuffered 16,777,216 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: MOSEL VITELIC V43648S04VTG 3.3 VOLT 8 M x 64 HIGH PERFORMANCE PC100AND 100 M HZ SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: MOSEL VITELIC PRELIMINARY V43728S04VTG 3.3 VOLT 8 M x 72 HIGH PERFORMANCE PC100AND 100 M HZ SDRAM UNBUFFERED DIMM Features Description • 168 Pin Unbuffered 8,388,608 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

k2718

Contextual Info: M OSEL V I T E L I C V437216S04VTG 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 AND 100 M H Z SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 16,777,216 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in

cs 2313

Contextual Info: M OSEL V I T E L I C V43728S04VTG 3.3 VOLT 8M x 72 HIGH PERFORMANCE PC100 AND 100 MHZ SDRAM UNBUFFERED DIMM PRELIMINARY Features Description • 168 Pin Unbuffered 8,388,608 x 72 bit Oganization SDRAM Modules ■ Utilizes High Performance 8M x 8 SDRAM in TSOPII-54 Packages

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynam ic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: ^¡PD4564163 are assembled.

Contextual Info: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-452AB64S 2 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-452AB64S is a 2,097,152 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 16M SDRAM: ,uPD4516821 A are assembled.

Contextual Info: IBM13T2649NC 2M x 64 2 Bank SDRAM SO DIMM Features 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module 2M x64 Synchronous DRAM SO DIMM Performance: 10 CAS Latency ; 12 Units 3 3 fcK Clock Frequency tcK Clock Cycle 100 : 83 10

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB526C272EN-10IN, HB526C472EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 72-bit, 66 MHz Memory Bus, 1/2-Bank Module 9/18 pcs of 2 M × 8 Components ADE-203-693D (Z) Rev. 4.0 Nov. 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

MC-454CB64S-A10

Abstract: MC-454CB64S-A10B MC-454CB64S-A10BL MC-454CB64S-A80
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: µPD4564163 (Rev. E) are assembled.

Contextual Info: ADVANCE 2M E Gx64 MICRON B SDRAM SODIMM TECHNOLOGY. INC. SMALL-OUTLINE SDRAM MODULE MT8LSDT264H FEATURES 144-Pin Small-Outline DIMM DF-6 MARKING • Package 144-pin SODIMM (gold) G • Frequency/CAS Latency 66 M Hz/CL = 2 (10ns, 100 MHz SDRAMs) -66CL2 66 M H z/CL = 3 (12ns, 83 MHz SDRAMs) -66CL3

Contextual Info: IBM13N2649JC IBM13N2739JC 2M x 64/72 1 Bank Unbuffered SDRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64/72 Synchronous DRAM DIMM • Performance: 10 CAS Latency jfc K I Clock Frequency ItcK i Clock Cycle

Contextual Info: IBM13Q8739CC 8M x 72 Buffered SDRAM Module Features • 200-Pin emerging JEDEC Standard, Buffered 8Byte Dual In-line Memory Module • 8M x 72 Synchronous DRAM DIMM • Performance: CAS Latency = 2* -10 j Units j ! MHz j ; ns jfcK j Clock Frequency 66 ; tcK2

Contextual Info: IBM13N1649NC IBM13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 1 Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency • • • • • • -10 3 jfc K Clock Frequency

Contextual Info: IBM13N8739CC 8M x 72 2 Bank Unbuffered SDRAM Module Features • 168 Pin Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: j 10 j Units! CAS Latency 3 ! fcK I Clock Frequency jtcK j Clock Cycle iUc j Clock Access Time j

Contextual Info: IBM13Q4739CC 4M x 72 Registered SDRAM Module Features • Programmable Operation: • 200-Pin emerging JEDEC Standard, Buffered 8Byte Dual In-line Memory Module • 4M x 72 Synchronous DRAM DIMM • Performance: -10 : U nits j ! fcK j C lo c k F re q u e n c y

Contextual Info: MEMORY Un-buffered 4 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM MB8504S064AE-100/-84/-67/-100L/-84L/-67L 144-pin, 2 Clock, 1-bank, based on 4 M x 16 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S064AE is afully decoded, CMOS Synchronous Dynamic Random Access Memory SDRAM

MT16LSD464AG-66CL2

Contextual Info: ADVANCE 2, 4 MEG X 64 SDRAM DIMMs MICRON I TECHNOLOGY. ir.U. SYNCHRONOUS DRAM MODULE MT8LSD T 264A MT16LSD(T)464A FEATURES • Components SOJ TSOP D DT • Package 168-pin DIMM (gold) • Frequency/C A S Latency 66 M H z/C L = 2 (10ns, 100 M Hz SD RA M s)-66CL2

Nippon capacitors

Abstract: 0/B526C464EN
Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 64-bit, 66 MHz Memory Bus, 1/2-Bank Module 8/16 pcs of 2 M x 8 Components HITACHI ADE-203-737D (Z) Rev. 4.0 Nov. 1997 Description The H B526C264EN , H B526C 464EN belong to 8-byte D IM M (D ual In-line M em ory M odule) fam ily, and