SDA 2231 Search Results

SDA2231

Contextual Info: SIEMENS 3 mm T1 MULTILED», Non Diffused LSG 3331 Besondere Merkmale • • • • nicht eingefärbtes, klares Gehäuse antiparallel geschaltete Leuchtdiodenchips hohe Signalwirkung durch Farbwechsel der LED möglich bei geeigneter Ansteuerung mit IC (z.B. SDA 2231),

ic a 2231

Abstract: GEX06729 Q62703-Q2297 3351
Contextual Info: 3 mm T1 MULTILED , Diffused LSG 3351 Besondere Merkmale nicht eingefärbtes, diffuses Gehäuse antiparallel geschaltete Leuchtdiodenchips hohe Signalwirkung durch Farbwechsel der LED möglich bei geeigneter Ansteuerung mit IC (z.B. SDA 2231), Farbwechsel von grün über gelb und orange bis super-rot

SDA2231

Abstract: ansteuerung led ic a 2231 GEX06729 Q62703-Q2296
Contextual Info: 3 mm T1 MULTILED , Non Diffused LSG 3331 Besondere Merkmale nicht eingefärbtes, klares Gehäuse antiparallel geschaltete Leuchtdiodenchips hohe Signalwirkung durch Farbwechsel der LED möglich bei geeigneter Ansteuerung mit IC (z.B. SDA 2231), Farbwechsel von grün über gelb und orange bis super-rot

ic a 2231

Abstract: SDA2231 a 2231 8 pin sda 2231 siemens bicolor led SDA223 a2231 siemens led
Contextual Info: SIEM ENS Control 1C for Two-Color LEDs SDA 2231 Bipolar IC Features • 15 bi-color LEDs are connected in 5 circuits with 3 LEDs each • Oscillator with control input to set the LEDs color output • The brightness setting of the LEDs can directly follow the brightness setting of the

24C01 pin configuration

Abstract: 24C01 24C01 6 024-Bit IS24C01 IS24C01-3 IS24C01-3G IS24C01-3P
Contextual Info: ISSI ISSI IS24C01-3 IS24C01-3 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM ® ADVANCE INFORMATION APRIL 1998 FEATURES • Self-timed write cycle — Maximum write cycle time of 10 ms • Endurance: 100K cycles per byte • 8-pin PDIP or SOIC packages • Low power CMOS

24C02

Abstract: IS24C02 IS24C02-3 IS24C02-3G IS24C02-3P IS24C02-3PI
Contextual Info: ISSI ISSI IS24C02-3 IS24C02-3 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM ® PRELIMINARY JANUARY 1998 FEATURES • Endurance: 1,000,000 cycles per byte • 8-pin PDIP or SOIC packages • Filtered inputs for noise suppression • Low power CMOS — Active current less than 2 mA

Contextual Info: ISSI IS24C01 -3 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM ADVANCE INFORMATION APRIL 1998 FEATURES • • Self-timed write cycle Low power CMOS — Maximum write cycle time of 10 ms — Active current less than 2 mA — Standby current less than 8 |a,A •

eeprom 24c04 pin configuration

Abstract: 24C04 IS24C04 IS24C04-G IS24C04-P IS24C04-PI 24c041 issi 24C04
Contextual Info: ISSI ISSI IS24C04 IS24C04 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM ® JANUARY 1998 FEATURES • 8-pin PDIP or SOIC packages • Filtered inputs for noise suppression • 400 KHz Compatability • Low power CMOS — Active current less than 2 mA — Standby current less than 8 µA

24C02

Abstract: IS24C02 IS24C02-3 IS24C02-3G IS24C02-3P
Contextual Info: ISSI ISSI IS24C02-3 IS24C02-3 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM ® PRELIMINARY SEPTEMBER 1998 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 µA • Low voltage operation — Vcc = 2.7V to 5.5V • Hardware write protection

IS24C02-ZI

Abstract: 24C02 IS24C02 IS24C02-G IS24C02-P IS24C02-PI IS24C02-S IS24C02-Z
Contextual Info: ISSI ISSI IS24C02 IS24C02 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM ® AUGUST 1998 FEATURES • Endurance: 1, 000,000 cycles per byte • 8-pin PDIP, TSSOP, MSOP or SOIC packages • Filtered inputs for noise suppression • Low power CMOS — Active current less than 2 mA

24C01

Abstract: 24C01 pin configuration IS24C01 IS24C01-G IS24C01-P
Contextual Info: ISSI ISSI IS24C01 IS24C01 1024-BIT SERIAL ELECTRICALLY ERASABLE PROM ® ADVANCE INFORMATION APRIL 1998 OVERVIEW FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 µA • Hardware write protection — Write control pin

Contextual Info: ISSI IS24C02-3 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY JANUARY 1998 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 |aA • Low vo Itag e o pe rati o n — 3.0V Vcc = 2.7V to 5.5V • Hardware write protection

Contextual Info: IS24C02 W 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM M JANUARY 1998 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 |aA • Hardware write protection — Write control pin • Internally organized as 256 x 8 • Two-wire serial interface

Contextual Info: ISSI IS24C256 262,144-bit 2-WIRE SERIAL CMOS EEPROM ADVANCED INFORMATION JANUARY 2003 DESCRIPTION FEATURES • Organization: – 32K-bit x 8-bit • 64-Byte Page Write Buffer • Two-Wire Serial Interface – Bi-directional data transfer protocol • Low Power CMOS Technology

Contextual Info: IS24C02-3 m 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM t PRELIMINARY JANUARY 1998 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 fiA • Low voltage operation — 3.0V Vcc = 2.7V to 5.5V • Hardware write protection

Contextual Info: m IS24C02-3 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM ¡ PRELIMINARY JULY 1997 FEATURES Endurance: 100,000 cycles per byte 8-pin PDIP or SOIC packages Filtered inputs for noise suppression • Low power CMOS — Active current less than 2 mA — Standby current less than 8 fiA

Contextual Info: ISSI IS24C04_ 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM JANUARY 1998 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 |aA • Hardware write protection — Write control pin • Internally organized as 512 x 8

Contextual Info: ISSI IS24C04-3 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY JANUARY 1998 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 |aA • Low vo Itag e o pe rati o n — 3.0V Vcc = 2.7V to 5.5V • Hardware write protection

Contextual Info: ISSI IS24C128 131,072-bit 2-WIRE SERIAL CMOS EEPROM PRELIMINARY INFORMATION OCTOBER 2002 FEATURES DESCRIPTION • Organization: The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory

Contextual Info: ISSI IS24C128 131,072-bit 2-WIRE SERIAL CMOS EEPROM PRELIMINARY INFORMATION OCTOBER 2002 FEATURES DESCRIPTION • Organization: The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory

IS24C256

Abstract: IS24C256-2 IS24C256-2G IS24C256-2P IS24C256-2Z IS24C256-3 IS24C256-3G IS24C256-3P
Contextual Info: ISSI IS24C256 262,144-bit 2-WIRE SERIAL CMOS EEPROM ADVANCED INFORMATION MARCH 2003 DESCRIPTION FEATURES • Organization: – 32K-bit x 8-bit • 64-Byte Page Write Buffer • Two-Wire Serial Interface – Bi-directional data transfer protocol • Low Power CMOS Technology

24C02 application notes

Abstract: 24C02 IS24C02 IS24C02-G IS24C02-GI IS24C02-P IS24C02-PI
Contextual Info: ISSI ISSI IS24C02 IS24C02 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM ® JANUARY 1998 FEATURES • Endurance: 1, 000,000 cycles per byte • 8-pin PDIP or SOIC packages • Filtered inputs for noise suppression • Low power CMOS — Active current less than 2 mA

IS24C16

Abstract: IS24C16-G IS24C16-GI IS24C16-P IS24C16-PI
Contextual Info: ISSI ISSI IS24C16 IS24C16 16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM ® ADVANCE INFORMATION OCTOBER 1997 FEATURES OVERVIEW • Low power CMOS – Active current less than 3.0 mA – Standby current less than 35 µA • Hardware write protection – Write control pin

IS24C02-ZI

Abstract: 24c021 24C02SM
Contextual Info: WM IS24C02 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM AUGUST 1998 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 |aA • Hardware write protection — Write control pin • Internally organized as 256 x 8 • Two-wire serial interface