SD5443 PHOTOTRANSISTOR Search Results

SD5443-002

Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control

SD3443

Abstract: SD3443-001 SD3443-002 SD5443
Contextual Info: SD3443/5443 Silicon Phototransistor INFRA-57.TIF FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control

SD5433

Abstract: SD3443 SD5443 SE3450 SE5450 phototransistor 302
Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 18¡ nominal acceptance angle option • Wide operating temperature range (- 55¡C to +125¡C) • External base connection for added control

SD5433

Abstract: all datasheet phototransistor SD3443 SE5450 SD5443 SE3450 sd5443 phototransistor
Contextual Info: 17 September 1997 SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90¡ or 18¡ nominal acceptance angle option • Wide operating temperature range (-55¡C to +125¡C) • External base connection for added control

Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package » Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control

SD-3443-1

Abstract: sd5443 phototransistor
Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 16° nominal acceptance angle option • Wide operating temperature range (-55°C to +125°C) • External base connection for added control

SD5443-003

Abstract: SD3443 SD-3443-1
Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Wide operating temperature range (-55°C 1o+125°C) • External base connection for added control

sd5443 phototransistor

Abstract: SE5450 SD3443 SD5443 SE3450
Contextual Info: SD3443/5443 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM cir_03b.cdr Fig. 1 Responsivity vs Angular Displacement SD3443 Fig. 2 gra_052.ds4 Relative response 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Relative response cir_004.cdr

SD 5455

Abstract: SD-5443-4 SD-5443-3 sd-3443-3 SD5443-4 SD5443-3 SD-3443-2 spectronics SD.5443-3 SD-5443-2
Contextual Info: SILICON PHOTOTRANSISTORS FEATURES Spectrally and mechanically matched to SE-3455 and SE-5455 IR emitters Compatible with DDL/TTL circuitry SD-3443: Flat window can SD-5443: Lens can APPLICATIONS Tape Readers Card Readers Encoders Character Recognition Data Transmission

SV5637-001

Contextual Info: SV5637-001 Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • TO-46 metal can package, dome lens • 2¡ nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance • Mechanically and spectrally matched to SD5421

SV5637-001

Abstract: lens photodiode phototransistor INFRA-87 VCSEL phototransistor sd5443 phototransistor 850 nm LED honeywell sensor VCSEL photodiode SD5421 SD5443
Contextual Info: 17 September 1997 SV5637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • TO-46 metal can package, dome lens • 2¡ nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance

n11a

Abstract: 101S UHP4
Contextual Info: SD3443/5443 Silicon Phototransistor FEATURES • TO-4-6 metal can package ' C hdce ol [Ut window or lensed package • 90r or 18’ rcminalj acceptance angle oplion ' Wide operating temperature range (- 55 'C lo+125'C j ' External base connection for added control

SE5450-012

Abstract: SE5450-013
Contextual Info: SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125-C) • Mechanically and spectrally matched to

Contextual Info: SV5637-001 Preliminary Vertical Cavity Surface Emitting LASER GaAs 850 nm VCSEL FEATURES • TO-46 metal can package, dome lens • 2° nominal emission angle • Designed for low drive currents (7-15 mA) • High output vs input current performance • Mechanically and spectrally matched to SD5421

Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications

SE5455-003

Abstract: SE3455-003 SD5600 SE3455 SE3455-001 SE5455 SE5455-001 INFRA-21 SE5455-004 SE5455-002
Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode INFRA-83.TIF FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C)

SE5470-1

Abstract: 5443 equivalent SE3470-001
Contextual Info: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range

Contextual Info: SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option . 935 nm wavelength . Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to

SE3470-001

Abstract: SD5600 SE3470 SE3470-002 SE5470 SE5470-001 SE5470-003 TO46 lens phototransistor
Contextual Info: SE3470/5470 FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range

SD 5455

Abstract: SE3455-004 SE3455-003 SE5455-004 SE5455
Contextual Info: SE3455/5455 GaAs Infrared Emitting Diode FEA TU R ES • TO -46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) • Ideal for high pulsed current applications

SE5470

Abstract: SE5470-003
Contextual Info: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package I • 90° or 20° nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents

Contextual Info: SE3450/5450 GaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option • 935 nm wavelength • Wide operating temperature range (-55°C to +125°C) . Mechanically and spectrally matched to

Contextual Info: SE3470/5470 AIGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° nominal beam angle option . 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Wide operating temperature range

diameter glass lens phototransistor

Contextual Info: SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 20° ' nominal beam angle option • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents