SD 102 M Search Results

Contextual Info: cP IITSU May 1998 Revision 1.0 data sheet PDC16UV6484C- 102/103 T-S 128MByte (16Mx64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV6484C-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M

SD-041-12-22-211

Abstract: T-23 2901222041 SD 102 M
Contextual Info: BLUE ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.20 A/W min., 0.23 A/W typ. @ 450nm Total Area mm2 SD 041-12-22-011 isolated –211 0.85 SD 076-12-22-011 isolated -211 2.91 SD 100-12-22-021 isolated -221 5.1 SD 172-12-22-021 isolated -221

bss169

Abstract: E6327 017t Q67000-S322
Contextual Info: BSS169 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 100 V R DS on ,max 12 Ω 0.09 A I DSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23

BSO200N03S

Abstract: JESD22 Q67042-S4212 200N3
Contextual Info: BSO200N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 20 mΩ ID 8.8 A 1 • Qualified according to JEDEC for target applications • N-channel

infineon 6r045

Abstract: mosfet 6r045 IPW60R045CS 6r045 infineon 6r045 PG-TO-247-3 Q67045A5061 JESD22 PG-TO247-3 IPW60R045
Contextual Info: IPW60R045CS CoolMOS TM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO247 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.045 Ω 150 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: SIEMENS SIPMOS Power Transistors • • BUZ 84 BUZ 84 A N channel Enhancement mode Type V ds Id BUZ 84 800 V BUZ 84 A 800 V Package 1> Ordering Code Tc ^OS on 5.3 A 25 "C 2.0 £2 TO-204 AA C67078-A1013-A2 6.0 A 29 "C 1.5 n TO-204 AA C67078-A1013-A3 Maximum Ratings

IEC612

Abstract: 058N03M IEC61249-2-21 JESD22
Contextual Info: BSZ058N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features • Optimized for 5V driver application Notebook, VGA, POL V DS R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 5 mΩ V GS=4.5 V 6.4 ID

long range transmitter receiver circuit diagram

Abstract: HFBR-1115T HFBR-2115T "network interface cards"
Contextual Info: Fiber Optic Transmitter and Receiver Data Links for 125 MBd Technical Data HFBR-1115T Transmitter HFBR-2115T Receiver Features Description • Full Compliance with the Optical Performance Requirements of the FDDI PMD Standard • Full Compliance with the Optical Performance

2SD2157

Abstract: 2SD2157A
Contextual Info: 2SD2157, 2SD2157A Power Transistors 2SD2157, 2SD 2157A P a c k a g e D im e n s io n s Silicon NPN Triple-D iffused Planar D arlington Type P o w e r A m p lifie r • F e a tu re s • High D C c u rre n t gain h tF • High sp eed sw itch in g • “Fu ll P a c k ” p ackage for sim plified m ounting on a h e a t sink with

intel 80196 microcontroller pin diagram

Abstract: baw 92 FIFO buffer "variable threshold" 256Kbyte-SRAM intel 80196 microcontroller SCSI16 68HC11 BA10 BA11 BA12
Contextual Info: 2 1 3 ^ 3 ^ 0004503 205 S C I R CL-SH5500 'iCIRRUS LOGIC R> P roduct Bulletin FEATURES SCSI Interface • Supports 8- or 16-bit Fast/Wide data bus ■ Fast/Wide DMA/PIO transfers up to 20 Mbytes/ second ■ Supports SCSI-2 Initiator and Target Modes ■ Data Streaming Mode with automatic disconnect

optical communication

Abstract: DLX2012-FD DLX2020-FD HFBR5111 HFBR-5111 HFBR-5112 HFBR-5113 "network interface cards"
Contextual Info: Low Cost, Industry Standard FDDI MIC Transceivers Technical Data HFBR-5111 2x11 HFBR-5112 (Narrow 1x13) HFBR-5113 (Standard 1x13) Features • Full Compliance with the FDDI PMD Standard • Full Compliance with the Optical Performance Requirements of the ATM

MKP x2 SH 275

Abstract: SNMPO14220SQ r. 46 mkp x2 sh MKP X2 SH X2 MKP SH capacitor MKP X2 SH mkp4 A241 SNMPU04200SS R.41 MKP Y2 X1 SH
Contextual Info: D WIMA Snubber MKP Snubber MKP Capacitors for Pulse Applications with Double-Sided Metallized Electrodes, Schoopage Contacts and Internal Series Connection Special Features Electrical Data ˜ Pulse duty construction ˜ Self-healing ˜ Particularly reliable contact configurations: 4-lead versions and

4N06L30

Abstract: IPD25N06S4L-30 4N06L
Contextual Info: IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 30 mΩ ID 25 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

2N06L35

Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
Contextual Info: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

FHP3194

Abstract: FHP3194IM14X FHP3194IMTC14X KEB022 KEB025 SOIC-14
Contextual Info: FHP3194 4:1 High-Speed Multiplexer Features Description • 0.1dB gain flatness to 90MHz @ 2Vpp The FHP3194 is a 4:1 analog multiplexer designed for high-speed video applications. The output amplifier is a high-speed current feedback amplifier that offers stellar

TAS5142

Abstract: TAS5142DDV TAS5142DKD TAS5508
Contextual Info: TM TAS5142 www.ti.com SLES126B – DECEMBER 2004 – REVISED MAY 2005 STEREO DIGITAL AMPLIFIER POWER STAGE • • • • • • • • • • • • • • • • 2x100 W at 10% THD+N Into 4-Ω BTL 1 2×80 W at 10% THD+N Into 6-Ω BTL 2×65 W at 10% THD+N Into 8-Ω BTL

Contextual Info: TM TAS5142 www.ti.com SLES126B – DECEMBER 2004 – REVISED MAY 2005 STEREO DIGITAL AMPLIFIER POWER STAGE • • • • • • • • • • • • • • • • 2x100 W at 10% THD+N Into 4-Ω BTL 1 2×80 W at 10% THD+N Into 6-Ω BTL 2×65 W at 10% THD+N Into 8-Ω BTL

Contextual Info: Series R V 6 / 3 8 2 M Series R V6/382M .5 W a l t . Conductive Electrical Specilicalions Plastic Po tentio m ete r R esistance R ange 100Q to 5 M egohm , linear 500Q to 2.5 M egohm , non-linear ¿ s t- R esistance Tolerance Linear, up to 1 M egohm ±10% A bove 1 M egohm , ±20%

13n03la

Abstract: 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22
Contextual Info: IPD13N03LA IPU13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13 mΩ ID 30 A • N-channel • Logic level

TMK316

Abstract: MK105 GMK316 10p05 tmk105 FMMG 2 Emk105 223 1KV gmk105 GMK212
Contextual Info: 超低歪積層セラミックコンデンサ（CFCAP ） SUPER LOW DISTORTION MULTILAYER CERAMIC CAPACITORS CFCAP® OPERATING TEMP. K55VJ125C 特長 FEATURES YNewly developed dielectric material and the use of nickel for internal electrodes provide excellent temperature characteristics with high capacitance,

Contextual Info: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sh ee t SDC8UV7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UV7284-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as

Contextual Info: D WIMA FKP 1 Polypropylene PP Capacitors for Pulse Applications with Metal Foil Electrodes, Schoopage Contacts, Double-Sided Metallization and Self-Healing Internal Series Connection for Highest Current Carrying Capability PCM 15 mm to 37.5 mm Special Features

SMP30N10

Abstract: P N-Channel D-S MOSFET
Contextual Info: ^ EMIC SMP30N10 Sem i co n d u c t or s N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) I d (A) r DS(on) ( ^ ) 0.060 100 30 D O TO-220AB o .J l DRAIN connected to TAB o GD S s Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

AN2151

Abstract: KP1040 ST232 TS4975 TS4975EIJT PHG1
Contextual Info: TS4975 Stereo Headphone Drive Amplifier with Digital Volume Control via I2C Bus • Operating from VCC = 2.5V to 5.5V ■ I²C bus control interface ■ 40mW output power @ VCC = 3.3V, THD = 1%, F = 1kHz, with 16Ω load ■ Ultra-low consumption in stdby mode: 0.6µA