SD 102 M Search Results

Contextual Info: SD-102 VR ②00 30 1100 *4 *5 *① 光he contents of this data sheet are subject to change without advance notice for the purpose of improvement. When using this product, would you please refer to the latest specifications. SD-102 / P D / 光a / mW IL Light current

2SD867

Abstract: 2SC1815 2SC1959 2SC828A 2sd2023 2sd797 2SD877 2SD917 2SD1488 2SD425
Contextual Info: - 206 - m ¡s Type No. 2SD 75 ^ 2SD 75A 2SD 77 ^ 2SD 77A 2SD 78 < 2SD 79 oon on 2SD 2SD 2SD 2SD 2SD 2SD 81 ^ 82 ^ 83 / 84 — 88 ^ 90 / 2SD 2SD 2SD 2SD 2SD 2SD 91 92 / 93 / 94 96 100 2SD 100A 2SD 101 / 2 SD 102 2SD 2SD 2SD 2SD 2SD 103 * 104 / 105 / 107 , 108

Contextual Info: >• :MM IN M E T R IC DO NOT SC ALE _ l_ a n CD D IM E N S IO N S DWG. NO. D R AW IN G SD-5 102 |-*00 3.95 §£ §£ f t ^ -rS h r ^ -R» *U |0 , 3»5 SrtH 3 3 i+f E> J> I |—| z: o u a o vr S t 5 >3~ 5 vi 5 * o “0 CD on co 00 —

B22Y

Abstract: A08K B15Y 26-48-1082 b10y A14K A09K
Contextual Info: HEADER NUMBER: PIN NUMBER: PLATING PIN LENGTH: L MATING LENGTH: X GOLD POINT: G PIN HEIGHT: Y PC TAIL LENGTH: Z TIN: T CKTS: VOIDED CKTS: PACKAGING: MATERIAL ENG NUMBER NUMBER 26-48-1022 -A02A102 26-48-1032 -A03A102 26-48-1042 -A04A102 26-48-1052 -A05A102

Contextual Info: GROUP: A-6373-NA102-* PIN NUMBER: 2766-1 102 PIN LENGTH: L .560 / (14.22) MATING: M .295 / (7.49) PC TAIL: P .140 / (3.56) PACKAGING: PK-6373-001 BULK MATERIAL ENG CKT CKT NUMBER NUMBER 2 22-23-2021 A-6373-02A102 9 3 22-23-2031 A-6373-03A102 9 4 22-23-2041 A-6373-04A102 11

Contextual Info: cP IITSU November 1997 Revision 1.0 data sheet PDC4UV6484- 102/103/10 T-S 32MByte (4M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC4UV6484-(102/103/10)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M

Contextual Info: cP IITSU March 1998 Revision 1.0 data sheet PDC2UV6484A - 75/102/103 T-S 16MByte (2 M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC2UV6484A-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M

SD card footprint PCB

Abstract: IP4350CX24 wlcsp inspection
Contextual Info: IP4350CX24 9-channel SD memory card interface ESD protection filter to IEC 61000-4-2 level 4 Rev. 01 — 5 February 2010 Product data sheet 1. Product profile 1.1 General description The IP4350CX24 is a diode array designed to provide protection to downstream

Contextual Info: cP IITSU January 1999 Revision 1.0 data sheet PDC8UV6484 D/E -(75/102)T-S 64MByte (8Mx 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC8UV6484(D/E)-(75/102)T-S are high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M

Contextual Info: cP IITSU May 1998 Revision 1.0 data sheet PDC16UV6484C- 102/103 T-S 128MByte (16Mx64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV6484C-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M

Contextual Info: cP IITSU March 1998 Revision 1.0 data sheet PDC2UV6484B- 75/102/103 T-S 16MByte (2 M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC2UV6484B-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M

Contextual Info: TOSHIBA TLD U 1 102 T10 TOSHIBA LED LAMP TLSU1102 (T10), TLOU1102 (T10), TLYU1102 (T10) TLGU1102 (T10), TLPGU1102 (T10) PANEL CIRCUIT INDICATOR Surface Mount Device 3.2 (L) X 2.8 (W) X 3.4 (H) mm Size 02.8 mm Diameter Lens-top Type InGaA^P LED Line-up 5 Color : Red, Orange, Yellow, Green, Pure Green

Contextual Info: cP IITSU May 1998 Revision 1.0 data sheet PDC8UV6484C- 102/103 T-S 64MByte (8Mx 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC8UV6484C-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

Contextual Info: cP IITSU April 1998 Revision 1.0 data sheet PDC4 U V6484B- 75/102/103 T-S 32MByte (4M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC4UV6484B-(75/102/103)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M

Contextual Info: cP IITSU April 1998 Revision 1.0 data sheet PDC2UL6484H- 102/103 T-S 16MByte (2Mx 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC2UL6484H-(102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M

Contextual Info: cP IITSU December 1997 Revision 1.0 data sheet PDC4 U V6484A- 75/102/103 T-S 32MByte (4M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC4UV6484A-(75/102/103)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M

Contextual Info: c P IITSU April 1998 Revision 1.0 data sheet PDC2UL7284H- 102/103 T-S 16MByte (2Mx 72) CMOS, PC/100 Synchronous DRAM Module - ECC General Description The PDC2UL7284H-(102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M

Contextual Info: cP IITSU July 1998 Revision 1.0 data sheet P D C 16 R V 7 2 4 4 J - 102/10 3 T -S 128MByte (16Mx 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC16RV7244J-(102/103)T-S is a high performance, 128-megabyte synchronous, dynamic RAM module organized as 16M

Contextual Info: cP IITSU March 1998 Revision 1.0 data sheet PDC2UV7284B- 75/102/103 T-S 16MByte (2Mx 72) CMOS, PC/100 Synchronous DRAM Module - ECC General Description The PDC2UV7284B-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M

Contextual Info: cP IITSU September 1998 Revision 1.0 data sheet PDC4 U V6414C- 102/103 T-S 32MByte (4M x 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC4UV6414C-(102/103)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M

Contextual Info: cP IITSU March 1998 Revision 1.0 data sheet PDC2UV7284A - 75/102/103 T-S 16MByte (2Mx 72) CMOS, PC/100 Synchronous DRAM Module - ECC General Description The PDC2UV7284A-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M

TP 1078

Abstract: T1078
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 1078 N ø30 C A ø30 ø3,5 x 2 deep on both sides HK plug 2,8 x 0,8 2 G plug 2,8 x 0,8 VWK Aug. 1996 T 1078 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties

T1500

Contextual Info: Technische Information / Technical Information Netz-Thyristor Phase Control Thyristor T 1509 N 12 .18 N Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung

Contextual Info: cP IITSU December 1997 Revision 1.0 data sheet PDC4 U V7284A- 75/102/103 T-S 32MByte (4M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC General Description The PDC4UV7284A-(75/102/103)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M