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    SCT2160KE Search Results

    SCT2160KE Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SCT2160KEC
    		ROHM FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 22A TO-247 Original PDF 14
    SCT2160KEGC11
    		ROHM Semiconductor 1200V, 22A, THD, SILICON-CARBIDE Original PDF 1.08MB
    SCT2160KEHRC11
    		ROHM Semiconductor 1200V, 22A, THD, SILICON-CARBIDE Original PDF 1.06MB
    SF Impression Pixel

    SCT2160KE Price and Stock

    ROHM Semiconductor

    ROHM Semiconductor SCT2160KEHRC11

    1200V, 22A, THD, SILICON-CARBIDE
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    Quest Components SCT2160KEHRC11 495
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    Ameya Holding Limited SCT2160KEHRC11 30 1
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    Chip One Stop SCT2160KEHRC11 Tube 449 0 Weeks, 1 Days 1
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    ROHM Semiconductor SCT2160KEGC11

    1200V, 22A, THD, SILICON-CARBIDE
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    DigiKey SCT2160KEGC11 Tube 152 1
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    Mouser Electronics SCT2160KEGC11 420
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    Verical () SCT2160KEGC11 359 6
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    SCT2160KEGC11 114 5
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    SCT2160KEGC11 30 6
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    Quest Components SCT2160KEGC11 311
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    TME SCT2160KEGC11 1
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    Chip One Stop SCT2160KEGC11 Tube 114 0 Weeks, 1 Days 1
    • 1 $14.30
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    ROHM Semiconductor SCT2160KEC

    SICFET N-CH 1200V 22A TO247
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    DigiKey SCT2160KEC Tube 360
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    Bristol Electronics SCT2160KEC 60
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    Quest Components SCT2160KEC 48
    • 1 $18.49
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    Vyrian SCT2160KEC 9
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    ROHM Semiconductor SCT2160KE

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    Bristol Electronics SCT2160KE 10
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    Quest Components () SCT2160KE 1
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    SCT2160KE 1
    • 1 $20.70
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    SCT2160KE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SCT2160KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 160mW ID 22A PD 165W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode


    Original     		SCT2160KE 160mW O-247 R1102B PDF

    Contextual Info: SCT2160KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 160m ID 22A PD 165W TO-247 (1) (2) (3) Inner circuit (2) Features 1) Low on-resistance 2) Fast switching speed *1 (1) Gate (2) Drain (3) Source (1) 3) Fast reverse recovery


    Original     		SCT2160KE O-247 R1102B PDF

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Contextual Info: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ PDF