SCR 40 RIA 120 Search Results

25 RIA 120 SCR

Abstract: TO94 RIA80
Contextual Info: Bulletin 125201 International [ïôrIRectifier 80RIA SERIES PHASE CONTROL THYRISTORS Stud Version Features • All diffused design ■ G lass-m etal seal up to 1200V ■ International standard case T 0 -2 0 9 A C TO-94 ■ Threaded studs UNF 1/2 - 20U N F2A or ISO M 12x1.75

RUTTONSHA SCR

Abstract: RUTTONSHA 81 ria 120 600 amp RUTTONSHA diode datasheet RUTTONSHA SILICON RECTIFIER 25 ria 120 25 RIA 120 SCR RUTTONSHA SCR 25 RIA 120 SCR 40 RIA 120 RUTTONSHA SILICON RECTIFIER 81 ria 120 600 amp RUTTONSHA all diodes datasheet RUTTONSHA all diodes datasheet
Contextual Info: Ruttonsha International Rectifier Ltd. SILICON CONTROLLED RECTIFIERS RUTTONSHA 71RIA, 81RIA SERIES Power Silicon Controlled Rectifiers 110, 125 Amp RMS SCRs Types : 71RIA10-71RIA140, 81RIA10-81RIA140 71RIA, 81RIA FEATURES v All diffused series. v High di/dt and dv/dt capabilities.

scr C232

Abstract: types of scr packages scr C230 C230-C232 SCR TRIGGER PULSE scr c231 C230C C231C C231-C233 SCR 406 C232
Contextual Info: Silicon Controlled Rectifier C230-C232 C231-C233 2 5 ARMS TO 6 0 0 VOLTS The Silicon Controlled Rectifier C230/C232 is a reverse blocking triode thyristor designed for power switching and control circuits for high volume light industrial and consumer applications.

IR 30 RIA 120 SCR

Abstract: 72ria 71RIA60 71RIA40 SCR 40 RIA 120 70RIA60 A12U1 71R1A 40 81 ria 120 71RIA80
Contextual Info: INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL RECTIFIER DE § 4 Ö S 5 4 5 2 □□□4Û3S 55C 0 4 8 3 5 D Data Sheet No. PD-3.085 INTERNATIONAL RECTIFIER IÖR -71RIA & Sìria series <110 and 125 Amp RMS SCRs Description/Features Major Ratings and Characteristics

spusb1

Contextual Info: M N p ffF K V :; Introduction to Circuit Protection Transientology Overvoltage Application Guide and Selection Guide T y p ic a l A p p lic a t io n s a n d C ir c u it E x a m p le s A p p lic a tio n S e g m e n t L o w V o lta g e , B o a rd L e v e l P ro d u c ts

SCR 40 RIA 120

Contextual Info: International H>HRectifier s e r ie s b 2s r ia / b 25H2s SCR Power Modules 25A Features • ■ ■ ■ ■ ■ ■ ■ G lass passivated junctions for greater reliability Electrically isolated base plate 3 5 0 0 V RMS A vailable up to 1200 V RRM, V DRM

SCR GE C5u

Abstract: scr C203 scr c108 SCR C103 C5U SCR SCR GE C203 GE scr C5u C5U SCR GE 20 watt emergency light circuit emergency light circuit SCR
Contextual Info: GE TYPE JEDEC ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION C3 2N 877-81"1 3 0 -2 0 0 •t r m s :i M a x . R M S on-state cu rre n t (A C103 C 203 - 2 N 5 0 6 0 -6 4 3 0 -2 0 0 30 400 05 0 .8 0 .3 2 * 85 C 0 .5 0 @ 25’ C •t í a v i M a x . average o n-state cu rre n t @ 1 8 0 °

scr tic 106

Abstract: HBP MITEL
Contextual Info: M ITEL MP03 XXX 300 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 4.2 DS4482-5.0 Decem ber 1998 FEATURES • Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint

scr C106

Abstract: c106 scr equivalent SCR c106 GE scr C106 GE C106F2 SCR C106Y1 CI06 SCR C106Y1 terminal SCR 406J C106B2
Contextual Info: Silicon Controlled Rectifier Flat Pack Design Model C106 Up to 600 Volts 4 Amperes RMS o PRO D U C T FEATURES The Type C106 Silicon Controlled Rectifier (SCR) has the following outstanding featu res: o Cl 06 TYPE 4 LOW COST Cl 06 TYPE 2 O perates directly fro m low signal

TIC 44 SCR

Abstract: SCR TIC 44 MTO thyristor unial
Contextual Info: MITEL MP02 XXX 175 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes Septem ber 1992 version, 2.2 DS4477-3.0 Decem ber 1998 FEATURES • ■ ■ ■ ■ KEY PARAMETERS VDRM 1600V 'ts m 6800A lT AV (per arm) 175A Visol 2500V Dual Device M odule

HBP MITEL

Contextual Info: M ITEL MP03 XXX 175 Series Phase Control Dual SCR, SCR/Diode Modules S E M IC O N D U C T O R Supersedes O ctober 1992 version, 2.0 DS5098-3.0 Decem ber 1998 FEATURES • Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction

tyn685

Contextual Info: SGS-THOMSON TYN 682 — > TYN 692 SCR FEATURES . HIGH SURGE CAPABILITY . HIGH ON-STATE CURRENT . HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 682 —> TYN 692 Family Silicon Control­ led Rectifiers are high performance glass passi­ vated chips technology.

scr tic 106

Contextual Info: M ITEL MP03 XXX 275 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 3.2 DS4481-4.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint

Contextual Info: MITEL MP02 XXX 190 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes Septem ber 1992 version, 2.2 DS4479-3.0 D ecem ber 1998 FEATURES Dual device module Electrically isolated package Pressure contact construction International standard footprint

Contextual Info: 16-Bit, 1.2 MSPS CMOS, Sigma-Delta ADC AD7723 ANALOG DEVICES FEATURES 16-Bit Sigma-Delta ADC 1.2 MSPS Output Word Rate 32/16 x Oversampling Ratio Low-Pass and Band-Pass Digital Filter Linear Phase On-Chip 2.5 V Voltage Reference Standby Mode Flexible Parallel or Serial Interface

E78996 rectifier module

Abstract: E78996 bh2s
Contextual Info: I M&- m I iniernaiionai international rectifier [k>r]Rectifier bSE» s e r ie s b 2s r ia / b 25H2 s SCR Power Modules 25A Features • ■ ■ ■ ■ ■ ■ ■ 4flSS4S2 DOlbSS? TT5 ■ INR Glass passivated junctions for greater reliability Electrically isolated base plate 3 5 0 0 V RM S

5B2 rectifier

Contextual Info: imemaoonai S Rectifier bSE » s e rie s B25RIA/B25H2S internationalrectifier m SCR Power Modules 25A Features • ■ ■ ■ ■ ■ ■ ■ 4flSS4S5 D D l b s 5? I T S H I N R G la s s p a s s iv a te d ju n c tio n s fo r g re a te r re lia b ility E le c tric a lly is o la te d base p la te 3 5 0 0 V RM S

scr C106

Abstract: C106Y1 equivalent equivalent SCR c106 c106b1 equivalent SCR C106Y1 SCR TRIGGER circuit dc charger ge c106b1 c106 scr SCR C203 SCR 406J
Contextual Info: C 103 C203 - 2 N 50 6 0-64 30-200 3 0 400 ?5 400 05 0.8 0 .3 2 * 85 C 0.50 @ 25’ C tlllS lIlt 0 50 @ 2 5 3C- 1.0 < 85° C C3 GE TYPE 2 N 8 7 7 -8 1 "1 JEDEC C5 2N 2322-29 C6 07 - 2N 2 344-48 25-400 25-200 - C106 C107 C 108 - - - 50 4 00 15-600 1 *« K .

transistor sc 9013

Abstract: MOTOROLA SCR 2n2573 thyristor D mcr71 MOTOROLA mcr71 MC34062P1 MCR70 SCR Gate Drive transistor 9013
Contextual Info: MOTOROLA SC -CTELECOM} Gl 6367253 MOTOROLA SC ÏT~J b3h75SB □ □ 7 ciS00 □ |"~ T E L E C O M 01E 79200 D ~ T ' / / MC34062 MC35062 M O T O R O L A A d v a n c e In fo rm a tio n PIN -PR O G R A M M A B LE OVERVOLTAGE S E N S IN G C IR C U IT PIN-PROGRAMMABLE OVERVOLTAGE "CROWBAR"

scr tic 106

Abstract: HBP MITEL
Contextual Info: M ITEL MP03 XXX 300 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR DS4482-5.0 December 1998 Supersedes January 1994 version, 4.2 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint

TIC 44 SCR

Contextual Info: MITEL MP03 XXX 190 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes O ctober 1992 version, 2.0 DS5099-3.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint

HBP MITEL

Abstract: MP03A MTO thyristor
Contextual Info: M ITEL MP03 XXX 175 Series Phase Control Dual SCR, SCR/Diode Modules S E M IC O N D U C T O R Supersedes O ctober 1992 version, 2.0 DS5098-3.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint

scr tic 106

Contextual Info: MP03 XXX 360 Series MITEL Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 3.2 DS4484-4.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint

OSRAM ignitor

Contextual Info: D O -1 5 X A x ia l L e a d m * D O -2 1 4 A A S u r fa c e M o u n t T 0 -2 0 2 A B Type 1 T O -9 2 T ype 70 D o n o t u s e m o u n tin g ta b o r c e n te r le a d , e le c t r ic a lly c o n n e c te d SIDAC 95 - 330 Volts General Description T h e S id a c is a s ilic o n b ila te ra l v o lta g e trig g e re d s w itc h w ith