SCR 1 AM Search Results

MS-012-AA ISSUE C

Abstract: SP721 MS-001-BA MS-012-AA VSP721 high current scr
Contextual Info: SP721 100 2.5 TA = 25oC SINGLE PULSE 2 FORWARD SCR CURRENT A FORWARD SCR CURRENT (mA) 80 TA = 25oC SINGLE PULSE 60 40 20 1.5 1 IFWD EQUIV. SAT. ON THRESHOLD ~ 1.1V 0.5 VFWD 600 800 1000 1200 FORWARD SCR VOLTAGE DROP (mV) FIGURE 2. LOW CURRENT SCR FORWARD VOLTAGE DROP

SCR Inverter

Abstract: SCHEMATIC POWER SUPPLY WITH scr SCR PNPN
Contextual Info: GENERAL INFORMATION 1 Latch-up LATCH-UP CIRCUIT Latch-up is caused by an SCR Silicon Controlled Rectifier circuit. Fabrication of CMOS integrated circuits with bulk silicon processing creates a parasitic SCR structure. The behavior of this SCR is similar in principle to a true SCR. These structures result from the multiple diffusions needed for

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD FS0203 SCR SURFACE MOUNT SCR  DESCRIPTION The UTC FS0203 is a surface mount SCR, it uses UTC’s advanced technology to provide customers with high gate sensitivity, etc.  1 SOT-223 FEATURES * High gate sensitivity 

2N681-2N692

Abstract: 2n688 2N685 JANTX rsm ah 16 2N690 2n692 2N684 2N683 2N683 JANTX
Contextual Info: Semitronics Discrete Semiconductors C35 Series: 2N681-2N692 Description Phase Control SCR 16 Amperes 1 25-800 Volts Silicon Controlled Rectifiers SCR are reverse blocking triode thyristor semiconductor devices designed for power switching and phase control

Contextual Info: SO T2 23 MCR08BT1 SCR 23 July 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Contextual Info: SO T2 23 BT168GW SCR 17 March 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Contextual Info: SO T2 23 BT168GW SCR 21 February 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

500v 50a scr

Abstract: SCR 100A M505012FV E72445 scr 500V 50A M505012F
Contextual Info: Series M50 SCR/Diode 50-100 Amp • SCR/DIODE Modules • Over 40KW Output Capability PART NUMBER IDENTIFICATION Series Type Current M50-Case style 50 - 50 Amps 100 - 100 Amps Circuit Type 1-8 see schematic diagrams Example: M505012FV AC Line Voltage 1 - 120 Vac

Contextual Info: SO T2 23 BT168GWF SCR 21 February 2014 Product data sheet 1. General description Planar passivated SCR with faster switching performance and sensitive gate in a SOT223 surface mounted plastic package. This SCR with enhanced commutation performance is also designed to be interfaced directly to microcontrollers, logic integrated

Contextual Info: SO T2 23 BT168GWF SCR 18 March 2014 Product data sheet 1. General description Planar passivated SCR with faster switching performance and sensitive gate in a SOT223 surface mounted plastic package. This SCR with enhanced commutation performance is also designed to be interfaced directly to microcontrollers, logic integrated

Contextual Info: SO T2 23 BT168GWF SCR 11 July 2014 Product data sheet 1. General description Planar passivated SCR with faster switching performance and sensitive gate in a SOT223 surface mounted plastic package. This SCR with enhanced commutation performance is also designed to be interfaced directly to microcontrollers, logic integrated

Contextual Info: UNISONICTECHNOLOGIESCO., LTD FS0203 Preliminary SCR SU RFACE M OU N T SCR  DESCRI PT I ON The UTC FS0203 is a surface mount SCR, it uses UTC’s advanced technology to provide customers with high gate sensitivity, etc.  1 SOT-223 FEAT U RES * High gate sensitivity

Phase control inductive loads

Abstract: Muffin crydom series 1 vde0806 801C A1225 A2402 A2410 A2440 A2450
Contextual Info: ?3 1 Q ? -te 5 f5 C aYJO M BULLETIN 801C C O M P A N Y SERIES 1 SCR Output Solid-State Relays 2.5 Thru 90 Amp 24-480 VAC Output General Description C rydom ’s Series 1 prem ium line, solid-state power relays incorporate inverse-parallel SCR o u tp u t devices in the

Contextual Info: TO -2 20F TYN16X-600CT SCR Rev. 1 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high thermal cycling

diodo scr

Abstract: diodo detector DIODO 10 W Movon DIODO
Contextual Info: DIGITRON ELECTRONIC CORP Reference 3t,E J> SÖMEbD? a • DGE TzAS'&f S & Ò 1,TY. 2 3 '1. No'. OS !5°0 £>& g *1 SCR I C13 . » . A pplications Automotive Switching* Low Level Logie SCR Triggering Memory Circuit« . Bing Counter* Level Detector« Fuse Circuits

scr 357

Abstract: cmos inverter
Contextual Info: Latch-up Protection CMOS inverter, as well as the bipolar components to the parasitic SCR structure. In steady-state conditions, the SCR structure remains off. Destruction results when stray current injects into the base of either Q1 or Q2 see Figure 1 . The current is amplified with regenerative

ignition cdi

Abstract: CDI circuit for automotive scr103 BT151 motor application
Contextual Info: BT151-500RT SCR 27 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT78 (TO-220AB) plastic package intended for use in applications requiring good bidirectional blocking voltage

Contextual Info: TYN20B-600T SCR 20 November 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT404 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush

digital triggering scr

Abstract: zener diode A36 regulated bipolar power supply connection 12V SCR FAST SWITCHING TO 48 SCR FAST SWITCHING design of mosfet based power supply detailed circuit on high voltage off scr High power SCR power supply 12v, 7v, 5v mosfet power supply
Contextual Info:  Application Note MSAN-107 Understanding and Eliminating Latch-Up in CMOS Applications ISSUE 1 Contents • Semiconductor Device Considerations • Background on SCR’s • Parasitic Bipolar Structures in the ISO-CMOS Topology • Output SCR Structures

Contextual Info: TO -2 20A B TYN16-600RT SCR Rev. 1 — 2 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability, high

lt 6029

Abstract: C702 LT 428 BP107 C702CB P-158 2T933
Contextual Info: fomcHor C702 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P h 3S G Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 1 ' C O fltr O l . SCR 1000 Amperes Average 3200 Volts C702 Phase Control SCR

800t date codes

Abstract: CDI circuit for automotive cdi ignition
Contextual Info: TYN20B-800T SCR 20 November 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT404 (D2PAK) surface mountable plastic package intended for use in applications requiring very high inrush

BT151X-650R

Contextual Info: BT151X-650R SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking

scr inverter schematic circuit

Abstract: SCHEMATIC POWER SUPPLY WITH scr SCR WITH I-V CHARACTERISTICS trace inverter schematic scr inverter SCR TRIGGER circuit
Contextual Info: Latch-up Protection CMOS inverter, as well as the bipolar components to the parasitic SCR structure. In steady-state conditions, the SCR structure remains off. Destruction results when stray current injects into the base of either Q1 or Q2 see Figure 1 . The current is amplified with regenerative