SCOP 45 Search Results

54F241

Abstract: e327
Contextual Info: 1 iDISTRIByTJON^iTATEMENT>Ai Approved for public release; distribution is unlimited. DESC FORM 193 MAY 86 This Material Copyrighted By Its Respective Manufacturer 1. SCOPE 1.1 Scop«. This drawing describes device requirements fo r class B M icrocircuits 1n accordance with

tamura HBL

Abstract: inverter 10w JST Manufacturing HBL-0217 3400B BHSR-02VS-1 P6021 SM02B inverter Tamura tamura hbl 03
Contextual Info: 8 .4 ” PIEZOELECTRIC INVERTER 1. Scop e This applies to the C FL Inverter cold — cathode tube inverter H BL— 02 17 . 2. Electrical C haracteristics a. Absolute M axim um Rating Rating Item Sym bol Min Max Input voltaqe Vin + 6 .0 IC S o u rce Voltaqe

5962-8762301EX

Contextual Info: DISTRIBUTION STATEM EN T A. Approved for public release; distribution is unlimited. DESC FORM 193 MAY 86 This Material Copyrighted By Its Respective Manufacturer i. SCOP’E 1.1 Scope. This drawing describes device requirements fo r c la s s B m ic r o c irc u its in accordance w ith

Contextual Info: This Material Copyrighted By Its Respective Manufacturer ± 1. SCOPE 1.1 Scop* . This drawing describes device requirements fo r class 8 m icro circu its in accordance with 1 .2 .1 o fm - S T D -3 8 3 , "Provisions fo r the use o f MIL-STD-883 in conjunction with compliant non-JA*l

Contextual Info: □ ANALOG DEVICES CMOS Serial Input 12-Bit DAC AD7543 1.1 Scop e. This specification covers the detail requirements for a monolithic C M O S 12-bit multiplying digital-to-analog converter designed for serial interface applications. 1.2 Part N um ber. The complete part number per Table 1 o f this specification is as follows:

scop 45

Contextual Info: ` Preliminary Datasheet 14.4mm x 9.5mm x 5.5mm SMD 622.08 MHz VCXO PECL or LVPECL Output for SONET/SDH Applications Electrical Performance Operating Conditions Frequency Frequency Stability Set Frequency Frequency vs. Temperature Freq. vs. Supply Voltage Variation

Contextual Info: ` Preliminary Datasheet 14.4mm x 9.5mm x 5.5mm SMD 622.08 MHz XO PECL or LVPECL Output for SONET/SDH Applications Electrical Performance Operating Conditions Frequency Frequency Stability: Set Frequency Frequency vs. Temperature Frequency vs. Supply Voltage Variation

bdx47

Abstract: BDX45
Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors BDX45; BDX47 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 collector, connected to metal part of mounting surface

2N4400

Contextual Info: 45E D • T Ü C1 7 E S G GG177bl TÔS4 1 TOSHIBA TRANSISTOR 2N4400 SILICON NPN EPITAXIAL T Y P E PCT PROCESS -? TO SHI BA (D IS C R E T E / O P T O ) r> FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV= 100nA(M a x -) , I]jEV=-100nA(Max. )

Thermal Considerations for Power Semiconductors

Contextual Info: Philips Semiconductors Product specification PNP Darlington transistors BSP60; BSP61; BSP62 FEATURES PINNING • High current max. 0.5 A PIN • Low voltage (max. 80 V) 1 • Integrated diode and resistor. 2,4 3 DESCRIPTION base collector emitter APPLICATIONS

2n2222 h parameter values

Abstract: 2n2222 2n2222a 2N2222 NPN Transistor features 2n2222 ti 2n2222 transistor pin b c e transistor 2N2222 PHILIPS 2N2222 circuit 2N2222, 2N2222A 2n2222 test circuit
Contextual Info: Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current max. 800 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Linear amplification and switching.

Contextual Info: M O TO RO LA M C5 4 F /7 4 F 1 3 8 1-OF-8 D EC O D ER/ DEMULTIPLEXER 1-OF-8 DECODER/DEMULTIPLEXER FAST D E SCRIPTIO N — The MC54F/74F138 is a high speed 1-of-8 Deco­ der/Demultiplexer. This device is ideally suited for high speed bipolar memory chip select address decoding. The multiple input enables

GD16522

Abstract: FAGD1652248BA GD16522-48BA STM16 STM-16
Contextual Info: 2.5 Gbit/s Clock and Data Recovery GD16522 an Intel company General Description Features The GD16522 is a high performance monolithic integrated multi-rate Clock and Data Recovery CDR device applicable for optical communication systems including: u SDH STM-16 / 4 / 1

GD16522

Abstract: GD16522-48BA STM16 STM-16 26LVTTL
Contextual Info: 2.5 Gbit/s Clock and Data Recovery GD16522 Preliminary General Description Features The GD16522 is a high performance monolithic integrated multi-rate Clock and Data Recovery CDR device applicable for optical communication systems including: u SDH STM-16 / 4 / 1

TSOP 1378

Abstract: 62C1024
Contextual Info: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y AUGUST 1997 FEATURES DESCRIPTION • A c c e s s tim e s of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They

Contextual Info: FUJITSU MICROELECTRONICS 374=171=2 G D G 7 ci53 Q E3E D 'T - H i- Z b - O Z October 1989 Edition 1.0 FUJITSU DATASHEET- M B 8 1 C 6 8 A - 45-W CMOS 16K-BIT HIGH SPEED SRAM 4096 WORDS X 4 BITS SRAM WITH HIGH SPEED AND AUTOMATIC POWER DOWN The Fujitsu MB81C68A-W is 4096 words x 4 bits static random access memory fabricated

Contextual Info: SESDT–10–32–G–03.0–L2 F-214 Rev 05SEP14 TEM–110–02–03.0–G–D–L1 SYSTEM (0,80 mm) .0315" SESDT–15–32–G–03.2–L SESDT, TEM-L1 SERIES DISCRETE WIRE CABLE ASSEMBLY Mates with: TEM-L1 TYPE STRIP POSITIONS PER ROW PLATING OPTION

GPC-3060D

Abstract: DA2403-01
Contextual Info: _i_ 1.0 Rev. FUNCTION SPECIFICATION Title M odel DA2403-01 1.2 DOC. Number Date 07/12/2002 PSDA2403-0112 ELECTRICAL CHARACTERISTICS: 1.1 ABSOLUTE MAXIMUM RATING : ITEM SYM VIN PD OPERATING TEMPERATURE Top STORATING TEMPERATURE Tstg RELATIVE HUMIDITY

IRFBC50

Abstract: IR2213 Application Notes and Design Tips 10KF6 SCOP 200-002
Contextual Info: IR2213 S PBF High and Low Side Driver Features •             Product Summary Floating channel designed for bootstrap operation Fully operational to +1200 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 12 V to 20 V

DSC 2.5-15

Abstract: DIN 3021 STANDARD
Contextual Info: 512K X 8 SRAM Module molate PUMA 67S16000-35/45/55 Issue 1.0 : May 1994 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Pin Definition 16,777,216 bit CMOS High Speed Static RAM S3 Features Fast Access times of 35/45/55 ns. JEDEC 68 J leaded Ceramic Surface Mount Package.

MOZ 23

Contextual Info: MITSUBISHI LSIs M5M5189AP, J-25, -35,-45,-55 6 5 5 3 6 -B IT 1 6 3 8 4 -W O R D BY 4 -B IT CMOS STATIC RAM DESCRIPTION This is a fam ily o f 16384 word by 4-bit static RAMs, fabri­ cated w ith the high-performance CMOS siiicon-gate MOS process and designed for high-speed application. These

Diode 1N41

Abstract: ECS-8FM ecs-8fa SMD 8f 1N41 ECS-8F
Contextual Info: ECS-8F SERIES SMD CLOCK OSCILLATOR The ECS-8F Series oscillator is compatible with both TTL and HCMOS technologies. The J-leaded configuration and high resistance to soldering temperature makes it ideal for surface mount production processes. The 8F offers low power consumption

Contextual Info: 512K X 8 SRAM molaic M S8512FK-45/55 Issue 3.1 : September 1993 S e m ic o n d u c to r Pin Definition 524,288 x 8 CM O S High Speed Static RAM Features Very Fast Access Times of 45/55 ns JED EC Standard 32 pin DIL footprint Operating Power 1050 mW typ. Low Power Standby

Contextual Info: f t e 1 o ws molate 6 4 K X 4 Monolithic CMOS SRAM MSM464T/V/W-45/55 Issue 2.0 : January 1992 M o sa ic S e m ic o n d u c to r PRELIMINARY 65,536 x 4 CMOS High Speed Static RAM ' P i n Definitions Package Type:T,'V’ Features Very Fast Access Times of 45/55 ns