SCK 101 Search Results

Contextual Info: XE3003 VSSD VSSA VDD VREG11 VREG16 Power supply management Microphone Bias Σ∆ modulator AIN Amp. VREF XE3003 Decimator SPI MISO SS SCK MOSI RESET Serial Audio Interface Clock mgt BCLK SDO FSYNC MCLK XE3003 Low-Power Audio ADC FEATURES GENERAL DESCRIPTION

NTC SCK 055

Abstract: THERMISTORS SCK 055 sck-0510 THERMISTORS SCK 053 THERMISTORS SCK 085 SCK-206 sck 104 NTC ntc 8r0 THERMISTORS SCK 054 sck 2r56
Contextual Info: SCK NTC Power Thermistors Series MERITEK Inrush Current Limiters UL E223037 FEATURES • • • • • High inrush current capacity Small power loss in steady state Normally IW or less than 50W power. High thermal and electrical stability Wide selection of electrical characteristics

FM25L04B-G

Contextual Info: AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

r5l64B

Abstract: FM25L64B FM25CL64B fm25l64 FM25CL64B-GTR fm25cl64bgtr FM25CL64BG fm25cl64b-g FM25CL64B-DG
Contextual Info: FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25W256

Abstract: FM25W256GTR FM25W256-GTR microcontroller bus system "test bus"
Contextual Info: Pre-Production FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Pre-Production FM25256 256Kb FRAM Serial 5V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Virtually Unlimited Endurance 1014 Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25640B-G

Contextual Info: FM25640B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced high-reliability ferroelectric process

25CL64B-GA

Abstract: 25CL64BGA 25cl64 FM25CL64B-Ga
Contextual Info: AEC Q100 Grade 1 Compliant FM25CL64B – Automotive Temp. 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

Contextual Info: FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention at 85° C • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

Contextual Info: r r u TECHNOLOGY n m LTC2400 24-Bit pPower AZ ADC in SO-8 FCRTURCS D C S C R IP TIO n • 24-Bit ADC in SO-8 Package The LTC 2400 is a 2.7V to 5.5V micropower 24-bit converter with an integrated oscillator, 4ppm INL and 0.3ppm RMS noise. It uses delta-sigma technology and

SCK 108

Abstract: ADA4941 AD7685 AD7687 AD7688 AD7690 AD7691 AD7693 ADA4941-1 AD8031
Contextual Info: 16-Bit, ±0.5 LSB, 500 kSPS PulSAR Differential ADC in MSOP/QFN AD7693 APPLICATION DIAGRAM 16-bit resolution with no missing codes Throughput: 500 kSPS INL/DNL: ±0.25 LSB typ, ±0.5 LSB max ±8 ppm of FSR Dynamic range: 96.5 dB SINAD: 96 dB @ 1 kHz THD: −120 dB @ 1 kHz

Contextual Info: Datasheet Automotive Series Serial EEPROMs 125℃ SPI BUS ICs BR25xxxxFamily BR25Hxxx-WC Series 1K 2K 4K 8K 16K 32K ●Description BR25Hxxx-WC series is a serial EEPROM of SPI BUS interface method. ●Packages W(Typ.) x D(Typ.) x H(Max) ●Features „ High speed clock action up to 5MHz (Max.)

Contextual Info: Datasheet Serial EEPROM Series Automotive EEPROM 125℃ Operation SPI BUS EEPROM BR25H010-2C ●General Description BR25H010-2C is a serial EEPROM of SPI BUS interface method. ●Features „ High speed clock action up to 10MHz Max. „ Wait function by HOLDB terminal.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00023-1v0-E Memory FRAM 2 M 256 K x 8 Bit SPI MB85RS2MT • DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

PCM1774

Abstract: 4127H mxl 608 PG5000
Contextual Info: BurrĆBrown Products from Texas Instruments PCM1774 SLAS551 – JULY 2007 16-Bit, Low-Power Stereo Audio DAC With Analog Mixing, Line and Headphone Outputs FEATURES • • • • • • • • Analog Front End: – Stereo Single-Ended Input – Microphone Amplifier 12 dB, 20 dB

Contextual Info: BurrĆBrown Products from Texas Instruments PCM1870 SLAS544A – MAY 2007 – REVISED SEPTEMBER 2007 16-Bit Low-Power Stereo Audio ADC With Microphone Bias and Microphone Amplifier FEATURES 1 • • • • • • • • • • • Analog Front End: – Stereo Single End Input With MUX

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00021-1v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256B • DESCRIPTION MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the

LTC2314-14

Contextual Info: LTC2323-16 Dual, 16-Bit, 5Msps Differential Input ADC with Wide Input Common Mode Range DESCRIPTION FEATURES 5Msps Throughput Rate ±4LSB INL Typ Guaranteed 16-Bit, No Missing Codes 8VP-P Differential Inputs with Wide Input Common Mode Range n 81dB SNR (Typ) at f = 2MHz

40khz sine wave inverter

Abstract: LTC2355-12 LTC2355CMSE-12 LT1790-3
Contextual Info: LTC2355-12/LTC2355-14 Serial 12-Bit/14-Bit, 3.5Msps Sampling ADCs with Shutdown U FEATURES DESCRIPTIO • The LTC 2355-12/LTC2355-14 are 12-bit/14-bit, 3.5Msps serial ADCs with differential inputs. The devices draw only 5.5mA from a single 3.3V supply and come in a tiny 10-lead

MB85RS1MT

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00022-2v0-E Memory FRAM 1M 128 K x 8 Bit SPI MB85RS1MT • DESCRIPTION MB85RS1MT is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 131,072 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the