SCHOTTKY DIODE MARKING Search Results
SCHOTTKY DIODE MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUHS15S40 |
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Schottky Barrier Diode (SBD), 40 V, 1.5 A, US2H | Datasheet | ||
CUHS20F30 |
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Schottky Barrier Diode (SBD), 30 V, 2 A, US2H | Datasheet | ||
CUHS15S60 |
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H | Datasheet | ||
CLS10F40 |
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Schottky Barrier Diode (SBD), 40 V, 1 A, CL2E | Datasheet | ||
CUHS20F60 |
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H | Datasheet |
SCHOTTKY DIODE MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
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5V/10A) 500ns, SD-46 Diode Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006 | |
diode
Abstract: SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
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5V/10A) diode SC-46 schottky diode 60V 5A CB803-03 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004 | |
ultra low forward voltage schottky diode
Abstract: diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004
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5V/10A) ultra low forward voltage schottky diode diode Schottky diode low voltage high current SC-46 ERA81-004 ERA82-004 ERA83-004 ERA83-006 ERA84-009 ERB81-004 | |
c81 004
Abstract: Diode C81 004 Schottky diode low voltage high current C81 diode diode color code diode "Power Diode" 20A schottky diode 60V 5A SC-46 ERA81-004
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5V/10A) c81 004 Diode C81 004 Schottky diode low voltage high current C81 diode diode color code diode "Power Diode" 20A schottky diode 60V 5A SC-46 ERA81-004 | |
schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
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5V/10A) 500ns, schottky diode 60V 5A 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004 | |
diode b81
Abstract: b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009
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5V/10A) diode b81 b81 004 Diode erb81-004 b81 diode diode color code ERB81-004 SC-46 ERA81-004 ERA83-006 ERA84-009 | |
IDW40G120C5BContextual Info: Silicon Carbide Schottky Diode IDW40G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW40G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1 |
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IDW40G120C5B IDW40G120C5B | |
Contextual Info: Silicon Carbide Schottky Diode IDW15G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW15G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1 |
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IDW15G120C5B | |
Contextual Info: Silicon Carbide Schottky Diode IDW20G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW20G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1 |
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IDW20G120C5B | |
D3012B5Contextual Info: Silicon Carbide Schottky Diode IDW30G120C5B 5th Generation thinQ! 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.0 2014-06-10 Indust rial Po wer C o ntrol IDW30G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode 1 |
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IDW30G120C5B D3012B5 | |
SOD80C
Abstract: M3D121 BAS85 smd diode marking Av 100H01 smd diode package sod80 PHILIPS DIODE SOD80 marking 37 schottky SMD 157 diode diode smd marking V
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M3D121 BAS85 OD80C OD80C 100H01 SOD80C M3D121 BAS85 smd diode marking Av 100H01 smd diode package sod80 PHILIPS DIODE SOD80 marking 37 schottky SMD 157 diode diode smd marking V | |
BAS70LContextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS70L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS70L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring |
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M3D891 BAS70L OD882 MDB391 SCA75 613514/01/pp8 BAS70L | |
BAS40L
Abstract: marking code s6 SOD-882L
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M3D891 BAS40L OD882 MDB391 SCA75 613514/01/pp8 BAS40L marking code s6 SOD-882L | |
1PS10SB63
Abstract: MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4
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M3D891 1PS10SB63 OD882 MDB391 SCA75 613514/01/pp7 1PS10SB63 MARKING S4 diode schottky MLE118 S4 DIODE schottky Schottky barrier sot-23 Marking s4 | |
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Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247 | |
Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598 | |
Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC6H065 O-220AC STPSC6H065D STPSC6H065G-TR DocID023247 | |
Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC STPSC10H065D STPSC10H065G-TR DocID023604 | |
Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure |
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STPSC10H065 O-220AC O-220AC STPSC10H065D STPSC10H065DI STPSC10H065B-TR STPSC10H065G-TR DocID023604 | |
d12s60
Abstract: SDT12S60 diode schottky code 03 Schottky diode TO220 Q67040-S4470 US180
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SDT12S60 PG-TO220-2-2. Q67040-S4470 D12S60 PG-TO-220-2-2 d12s60 SDT12S60 diode schottky code 03 Schottky diode TO220 Q67040-S4470 US180 | |
D05S60
Abstract: schottky 400v Q67040S4644 SDT05S60
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SDT05S60 PG-TO220-2-2. D05S60 Q67040S4644 PG-TO-220-2-2 D05S60 schottky 400v Q67040S4644 SDT05S60 | |
D05S60
Abstract: Q67040S4644 SDT05S60
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SDT05S60 P-TO220-2-2. D05S60 Q67040S4644 D05S60 Q67040S4644 SDT05S60 | |
ZLLS400
Abstract: ZLLS400TA ZHCS400 ZLLS400TC
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ZLLS400 OD323 OD323 swit26100 ZLLS400 ZLLS400TA ZHCS400 ZLLS400TC | |
AN 22022Contextual Info: SDT10S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 29 nC • No reverse recovery |
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SDT10S60 PG-TO220-2-2. Q67040S4643 D10S60 AN 22022 |