SCHOTTKY DIODE DIE FLIP CHIP Search Results

Contextual Info: MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance, 4 Ω Low Capacitance, 45 fF High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Solderable Bump Die Attach

police radar detector

Abstract: Schottky diode Die flip chip Schottky diode Die MADS-001317-1320AG police radar
Contextual Info: MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance, 4 Ω Low Capacitance, 45 fF High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Solderable Bump Die Attach

Schottky diode Die flip chip

Abstract: police radar detector MADS-001317-1320AG
Contextual Info: GaAs Solder Bump Flip Chip Schottky Diode MADS-001317-1320AG V1 Features • Low Series Resistance, 4 Ω • Low Capacitance, 45 fF • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Solderable Bump Die Attach Mounting Side with Solder Bumps

The Drive to Miniaturize - 0201 Flip Chip Silicon Schottky Diodes

Contextual Info: FEATURE ARTICLE PAGE 1 • NOVEMBER 2009 www.mpdigest.com The Drive to Miniaturize - 0201 Flip Chip Silicon Schottky Diodes by Rick Cory, Skyworks Solutions, Inc. Introduction he incessant drive to miniaturize electronic systems places pressure on semiconductor manufacturers to offer ever-smaller components. This trend is rapidly

diode 1283

Abstract: Schottky diode Die flip chip SEMICONDUCTOR DEVICE, DIODE 1283 B 1283
Contextual Info: Solder Bump Silicon Flip Chip Medium Barrier Schottky Diode Features • • • • • • • • • • • Low Series Resistance : 6.5 Ω Low Capacitance : 95 fF Sn 63/ Pb 37 Solder Bumps Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion

MADS-001317-1500

Abstract: Schottky diode Die flip chip MADS-001317-1500AG SN63 PB37 PROFILES MADS-001317-1500AP MADS-001317
Contextual Info: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V1 Features • • • • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant Designed for Easy Circuit Insertion

Contextual Info: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V2 Features • • • • • • • • • • Usable Past 80GHz Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant

Contextual Info: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V3 Features • • • • • • • • • • Usable Past 80GHz Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant

ODS-1278

Abstract: Schottky diode Die flip chip
Contextual Info: MA4E1310 GaAs Flip Chip Schottky Barrier Diode Rev. V2 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion Case Style ODS-1278

Schottky diode Die flip chip

Abstract: police radar detector police radar detector detector MA4E1319-1 MA4E1319-2 0618 2375 MA4E1317 MA4E1318 "Schottky Barrier Diodes"
Contextual Info: MA4E1317, MA4E1318 MA4E1317 MA4E1319-2 MA4E1319-1, MA4E2160 V2 GaAs Flip Chip Schottky Barrier Diodes Features • Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Designed for Easy Circuit Insertion

Contextual Info: MA4E1310 GaAs Flip Chip Schottky Barrier Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion

Contextual Info: MA4E1310 GaAs Flip Chip Schottky Barrier Diode M/A-COM Products Rev. V3 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion

MA4E1317

Abstract: SN 0203 diode v6 33 MADS-001318-1197HP police radar detector MA4E1318 MA4E1319-1 MA4E1319-2 mads-001318 MADS-001317
Contextual Info: MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V6 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection

Contextual Info: MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V7 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection

MA4E1317

Abstract: ma4e1319-2 MA4E1319-1
Contextual Info: GaAs Flip Chip Schottky Barrier Diodes Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2 V1

HBM 00-01

Contextual Info: DATA SHEET GaAs Flip Chip Schottky Diodes Applications ● ● Mixer Detector Features ● ● ● ● ● ● ● Designed for high volume designs High frequency 20–100 GHz Exceeds environmental requirements for MIC & hybrid applications Designed for low junction capacitance and low

Contextual Info: DATA SHEET GaAs Flip Chip Schottky Diodes Applications ● ● Mixer Detector Features ● ● ● ● ● ● ● Designed for high volume designs High frequency 20–100 GHz Exceeds environmental requirements for MIC & hybrid applications Designed for low junction capacitance and low

macom

Abstract: flip chip MACOM Schottky Diode
Contextual Info: MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V4 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection

DMK2308-000

Abstract: DMK2308-G1U DMK2790-000 DMK2790-G1U DMK2790-G4D DMK2790-TR1 DMK2790-TR5
Contextual Info: data sheet GaAs Flip Chip Schottky Diodes— Singles and Antiparallel Pairs Applications l l M  ixers D  etectors Features D  esigned for high-volume designs H  igh frequency 20–100 GHz l E  xceeds environmental requirements for MIC & hybrid applications

Contextual Info: MA4E1317, MA4E1318, MA4E1319-1, MA4E1319-2, MA4E2160 GaAs Flip Chip Schottky Barrier Diodes M/A-COM Products Rev. V5 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection

MA4E1317

Contextual Info: an A M P com pany GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 MA4E131712 Case Style 1198 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection

Schottky diode Die flip chip

Abstract: 0045E
Contextual Info: M an A M P com pany GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 Features • MA4E131712 Case Style 1198 Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection

radar application in adaptive cruise control

Abstract: DMK2308-000 DMK2790-000 20100 ct
Contextual Info: DMKflip_200660C:Datasheets10.qxd 11/6/2007 10:10 AM Page 1 DATA SHEET GaAs Flip Chip Schottky Diodes Applications ● ● Mixer Detector Features ● ● ● ● ● ● ● Designed for high volume designs High frequency 20–100 GHz Exceeds environmental requirements for MIC &

police radar detector

Abstract: MA4E1317 police radar detector detector MA4E1318 MA4E1319-1 MA4E1319-2 Schottky diode Die flip chip
Contextual Info: GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 Features ● ● ● ● ● ● MA4E13171, 2 Case Style 1198 Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection